Op-Amp Voltage Amplifiers Word Document
... Voltage gain can be determined if either VOUT and VIN are known or if RF and RIN are known. The ‘-‘ sign in the formula indicates the inverting action of this amplifier, so at any moment if the input voltage is positive, the output will be negative, and vice versa. If you are designing an amplifier ...
... Voltage gain can be determined if either VOUT and VIN are known or if RF and RIN are known. The ‘-‘ sign in the formula indicates the inverting action of this amplifier, so at any moment if the input voltage is positive, the output will be negative, and vice versa. If you are designing an amplifier ...
MAX1652–MAX1655 High-Efficiency, PWM, Step-Down DC-DC Controllers in 16-Pin QSOP General Description
... and deliver up to 10A using a unique Idle Mode™ synchronous-rectified PWM control scheme. These devices automatically switch between PWM operation at heavy loads and pulse-frequency-modulated (PFM) operation at light loads to optimize efficiency over the entire output current range. The MAX1653/MAX1 ...
... and deliver up to 10A using a unique Idle Mode™ synchronous-rectified PWM control scheme. These devices automatically switch between PWM operation at heavy loads and pulse-frequency-modulated (PFM) operation at light loads to optimize efficiency over the entire output current range. The MAX1653/MAX1 ...
MAX17598/MAX17599 Low I , Wide-Input Range, Active Clamp Current-Mode PWM Controllers
... The devices include an AUX driver that drives an auxiliary MOSFET (clamp switch) that helps implement the active-clamp transformer reset topology for forward converters. Such a reset topology has several advantages including reduced voltage stress on the switches, transformer size reduction due to l ...
... The devices include an AUX driver that drives an auxiliary MOSFET (clamp switch) that helps implement the active-clamp transformer reset topology for forward converters. Such a reset topology has several advantages including reduced voltage stress on the switches, transformer size reduction due to l ...
Literature review 7
... chemical equilibrium, N should not incorporate into a SiO2 film. However, N containing SiO2 films a have been grown on Si. Two reasons for the presence of N have been given.3-5-7 First, N atoms may simply be kinetically trapped at the reaction zone near the interface, and thus the N is present in a ...
... chemical equilibrium, N should not incorporate into a SiO2 film. However, N containing SiO2 films a have been grown on Si. Two reasons for the presence of N have been given.3-5-7 First, N atoms may simply be kinetically trapped at the reaction zone near the interface, and thus the N is present in a ...
Ch6 MOSFETS HSD_LSD PART 1 - Bridging Theory into Practice
... • Lamps and RC networks can experience significant “in-rush” current when they are initially turned on • When a lamp initially turns on, the filament is cold, and has a relatively low resistance • As the filament warms up, the resistance increases dramatically (often by an order of magnitude) ...
... • Lamps and RC networks can experience significant “in-rush” current when they are initially turned on • When a lamp initially turns on, the filament is cold, and has a relatively low resistance • As the filament warms up, the resistance increases dramatically (often by an order of magnitude) ...
BD9132MUV
... 5. Consideration on Permissible Dissipation and Heat Generation Since this IC functions with high efficiency without significant heat generation in most applications, no special consideration is needed on permissible dissipation or heat generation. In case of extreme conditions, however, including l ...
... 5. Consideration on Permissible Dissipation and Heat Generation Since this IC functions with high efficiency without significant heat generation in most applications, no special consideration is needed on permissible dissipation or heat generation. In case of extreme conditions, however, including l ...
Dynamic Fine-Grain Leakage Reduction Using Leakage
... can cause spurious circuit switching, which results in significant deactivation energy. All DDFT circuits require a policy to decide when to switch to a low-leakage mode. Current microprocessors use a simple policy, usually implemented by the operating system, whereby the entire processor is deactiv ...
... can cause spurious circuit switching, which results in significant deactivation energy. All DDFT circuits require a policy to decide when to switch to a low-leakage mode. Current microprocessors use a simple policy, usually implemented by the operating system, whereby the entire processor is deactiv ...
AND8353 - ON Semiconductor
... Note that this feature also provides protection against open loop conditions in the feedback path. If Pin 1 is inadvertently floating (perhaps due to a bad solder joint), the controller senses that VFB is low and responds by delivering maximum power. The output voltage increases and over stresses th ...
... Note that this feature also provides protection against open loop conditions in the feedback path. If Pin 1 is inadvertently floating (perhaps due to a bad solder joint), the controller senses that VFB is low and responds by delivering maximum power. The output voltage increases and over stresses th ...
MAX796/MAX797/MAX799 Step-Down Controllers with Synchronous Rectifier for CPU Power _______________General Description
... Unique bootstrap circuitry drives inexpensive N-channel MOSFETs, reducing system cost and eliminating the crowbar switching currents found in some PMOS/NMOS switch designs. The MAX796/MAX799 are specially equipped with a secondary feedback input (SECFB) for transformer-based dual-output applications ...
... Unique bootstrap circuitry drives inexpensive N-channel MOSFETs, reducing system cost and eliminating the crowbar switching currents found in some PMOS/NMOS switch designs. The MAX796/MAX799 are specially equipped with a secondary feedback input (SECFB) for transformer-based dual-output applications ...
Catastrophic Failure and Fault-Tolerant Design of - CORPE
... to a survey, semiconductor failure and soldering joints failure in power devices take up 34% of power electronic system failures [2]. Another survey shows that around 38% of the faults in variable-speed ac drives are due to failure of power devices [3]. A recent questionnaire on industrial power ele ...
... to a survey, semiconductor failure and soldering joints failure in power devices take up 34% of power electronic system failures [2]. Another survey shows that around 38% of the faults in variable-speed ac drives are due to failure of power devices [3]. A recent questionnaire on industrial power ele ...
TPS62065x 3-MHz 2A step down converter in a 2x2 SON package
... With an input voltage range of 2.9 V to 6 V, the device is a perfect fit for power conversion from a 5-V or 3.3-V system supply rail. The TPS6206x operates at 3-MHz fixed frequency and enters power save mode operation at light load currents to maintain high efficiency over the entire load current ra ...
... With an input voltage range of 2.9 V to 6 V, the device is a perfect fit for power conversion from a 5-V or 3.3-V system supply rail. The TPS6206x operates at 3-MHz fixed frequency and enters power save mode operation at light load currents to maintain high efficiency over the entire load current ra ...
LTC4002- 2-Cell Standalone Li-Ion Switch Mode Battery Charger
... the P-Channel MOSFET. The voltage at this pin is internally clamped to 8V below VCC, allowing a low voltage MOSFET with gate-to-source breakdown voltage of 8V or less to be used. PGND, SGND, Exposed Pad, GND (Pins 4, 5, 11/Pin 4): IC Ground. The exposed pad (DFN) must be soldered to PCB ground to pr ...
... the P-Channel MOSFET. The voltage at this pin is internally clamped to 8V below VCC, allowing a low voltage MOSFET with gate-to-source breakdown voltage of 8V or less to be used. PGND, SGND, Exposed Pad, GND (Pins 4, 5, 11/Pin 4): IC Ground. The exposed pad (DFN) must be soldered to PCB ground to pr ...
TDA3617 Multiple voltage regulator
... The TDA3617 is a multiple output voltage regulator with three independent switchable regulators. When the supply voltage is available (VP > 4.5 V), regulators 1, 2 and 3 can be operated by means of three independent enable inputs. Schmitt trigger functions are included to switch the regulators off a ...
... The TDA3617 is a multiple output voltage regulator with three independent switchable regulators. When the supply voltage is available (VP > 4.5 V), regulators 1, 2 and 3 can be operated by means of three independent enable inputs. Schmitt trigger functions are included to switch the regulators off a ...
BDTIC www.BDTIC.com/infineon AN2010-03 7ED020E12-FI-U1 – Evaluation Board for SmartPIM1
... developed to support customers during their first steps designing applications with these modules. The basic version of the board is available from Infineon in small quantities. The properties of these parts are described in the datasheet chapter of this document whereas the remaining paragraphs pro ...
... developed to support customers during their first steps designing applications with these modules. The basic version of the board is available from Infineon in small quantities. The properties of these parts are described in the datasheet chapter of this document whereas the remaining paragraphs pro ...
IGBT Driver Calculation
... t0 switching interval: The gate current IG charges the input capacitance CGE and the gate-emitter voltage VGE rises to VGE(th). Depending on the gate resistor, several amperes may be running in this state. As VGE is still below VGE(th), no collector current flows during this period and VCE is mainta ...
... t0 switching interval: The gate current IG charges the input capacitance CGE and the gate-emitter voltage VGE rises to VGE(th). Depending on the gate resistor, several amperes may be running in this state. As VGE is still below VGE(th), no collector current flows during this period and VCE is mainta ...
Using VRC_CTL to Control an External VDD_LV Supply on the
... MPC5748G, an external ballast transistor is required to dissipate the power lost in going from the ballast supply voltage to the 1.25 V VDD_LV. • The VRC_CTL pin is controlled by the internal FREG and is connected directly to the base of the external ballast transistor to create a control loop. FPRE ...
... MPC5748G, an external ballast transistor is required to dissipate the power lost in going from the ballast supply voltage to the 1.25 V VDD_LV. • The VRC_CTL pin is controlled by the internal FREG and is connected directly to the base of the external ballast transistor to create a control loop. FPRE ...
PS9332L, PS9332L2 Data Sheet
... Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead (4) Cautions ...
... Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead (4) Cautions ...
ADP3088 1 MHz, 750 mA Buck Regulator Data Sheet (REV. C)
... VREF. The divider should be designed to satisfy the formula ...
... VREF. The divider should be designed to satisfy the formula ...
ZXT10P20DE6 Features Mechanical Data
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
BM6209FS
... When the controller detects either state that should be protected the overcurrent (OCP) and the over temperature (TSD), the FOB pin outputs low (open drain) and it returns to normal operation synchronizing with the carrier frequency. Even when this function is not used, the FOB pin is pull-up to the ...
... When the controller detects either state that should be protected the overcurrent (OCP) and the over temperature (TSD), the FOB pin outputs low (open drain) and it returns to normal operation synchronizing with the carrier frequency. Even when this function is not used, the FOB pin is pull-up to the ...
PAM2401 Description Pin Assignments
... current limiting. The device includes one 0.10Ω N-channel MOSFET switch and one 0.15Ω P-channel synchronous rectifier. This product has the ability to simply program the output voltage from 2.5V to ...
... current limiting. The device includes one 0.10Ω N-channel MOSFET switch and one 0.15Ω P-channel synchronous rectifier. This product has the ability to simply program the output voltage from 2.5V to ...
Basic Wafer Definitions - Virginia Semiconductor Inc.
... have negative charge (n). Doping with the impurities Phosphorous, Antimony and Arsenic creates n-type material. p-type - Si material having holes as the majority current carriers. Holes have positive charge (p). Doping with the impurity Boron creates p-type material. ...
... have negative charge (n). Doping with the impurities Phosphorous, Antimony and Arsenic creates n-type material. p-type - Si material having holes as the majority current carriers. Holes have positive charge (p). Doping with the impurity Boron creates p-type material. ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.