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AN2181: MPC860 Revision D PLL Considerations
AN2181: MPC860 Revision D PLL Considerations

... circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for an ...
BD60A00NUX
BD60A00NUX

... ① Input each control signal after VIN exceeds 2.2V and UVLO is off. ② When input Enable and PWM, the standup time should be placed as Min.100µs from 2.2V to stable voltage for VIN. ③ Since a soft start function stops working at the time of following PWM=H when EN=H is held with PWM=L. After EN=H sho ...
IOSR Journal of Electronics and Communication Engineering (IOSRJECE)
IOSR Journal of Electronics and Communication Engineering (IOSRJECE)

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ZXTR2012Z Description Features

... The ZXTR2012Z monolithically integrates a transistor, Zener diode ...
MAX8667/MAX8668 1.5MHz Dual Step-Down DC-DC Converters with Dual LDOs and Individual Enables
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... DSPs in portable devices. They feature high efficiency with small external component size. The step-down converters are adjustable from 0.6V to 3.3V (MAX8668) or factory preset (MAX8667) with guaranteed output current of 600mA for OUT1 and 1200mA for OUT2. The 1.5MHz hysteretic-PWM control scheme al ...
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ZXTR2005Z Description Features

... The ZXTR2005Z monolithically integrates a transistor, Zener diode ...
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Data Sheet - NXP Semiconductors

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BD45241G

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... The MAX9060–MAX9064 are extremely small comparators ideal for compact, low-current, and lowvoltage applications. The MAX9060/MAX9061 consume only 50nA (typ) operating current, while the MAX9062/MAX9063/MAX9064 consume only 400nA (typ). The low-voltage operating capability of the MAX9060–MAX9064 make ...
ZXMP6A17DN8 Product Summary Features
ZXMP6A17DN8 Product Summary Features

... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
SiC Power Schottky Diodes in Power Factor Correction Circuits
SiC Power Schottky Diodes in Power Factor Correction Circuits

... require an semiconductors. ultrafast diode. The prime benefits theremoved SiC Schottky barrier recombination diode (SBD) lie in its ability to switch fast fast (<50recovery ns), with diodes almost zero has toofbe by carrier Silicon (Si) ultra have reverse-recovery charge, even at high junction tempe ...
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Emitter Current Bias Quick Review

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ZXTN2010Z Features Mechanical Data

... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
Chapter 5 Protection Circuit Design
Chapter 5 Protection Circuit Design

... This circuit uses D1 to constantly monitor the collector-emitter voltage, so if during operation the IGBT’s collector-emitter voltage rises above the limit at D2, then a short-circuit condition will be detected and T1 will be switched on while T2 and T3 are switched off. At this time, the accumulate ...
BD1321G
BD1321G

... (Note 3) The voltage difference between inverting input and non-inverting input is the differential input voltage. Then input terminal voltage is set to more than VSS. (Note 4) An excessive input current will flow when input voltages of more than VDD+0.6V or less than VSS-0.6V are applied. The input ...
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- ASU Digital Repository

... high frequency and high temperature applications in the recent years [1,2,3]. The major applications of these devices have been in the blue laser technology and also in microwave power technology. Even though the electron effective mass in the GaN technology is three times when compared to GaAs tech ...
AN1518 Using a Pulse Width Modulated Output
AN1518 Using a Pulse Width Modulated Output

... create an output waveform with a duty cycle that is linear to the applied pressure. Combining this circuitry with a single digital time base to create and measure the PWM signal, results in a stable, accurate output. Two additional advantages of this design are 1) an A/D converter is not required, a ...
a High Performance 4/8 Channel Fault-Protected Analog Multiplexers ADG438F/ADG439F*
a High Performance 4/8 Channel Fault-Protected Analog Multiplexers ADG438F/ADG439F*

... ADG438F comprising 8 single channels and the ADG439F comprising four differential channels. These multiplexers provide fault protection. Using a series n-channel, p-channel, nchannel MOSFET structure, both device and signal source protection is provided in the event of an overvoltage or power loss. ...
Gating, Latching, and Holding of SCRs and Triacs
Gating, Latching, and Holding of SCRs and Triacs

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Transistor



A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.
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