ZXLD1350 30V 350mA LED DRIVER with AEC-Q100 Description
... This scheme uses the 200k resistor between the ADJ pin and the internal voltage reference as a pull-up resistor for the external transistor. ...
... This scheme uses the 200k resistor between the ADJ pin and the internal voltage reference as a pull-up resistor for the external transistor. ...
TPD6V8LP Features Mechanical Data
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
files - ORCA - Cardiff University
... During the last decade, the need for configurable, flexible and mobile electrical equipment has become an inevitable phenomenon. The electrical industry in its various forms is growing with each new day. A small part of this industry focuses on microwave or microwave-assisted heating applications, d ...
... During the last decade, the need for configurable, flexible and mobile electrical equipment has become an inevitable phenomenon. The electrical industry in its various forms is growing with each new day. A small part of this industry focuses on microwave or microwave-assisted heating applications, d ...
VOM1271 Photovoltaic MOSFET Driver with Integrated Fast
... Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vi ...
... Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vi ...
Physics of Millimeter-Wave Power InAlAs/InGaAs Heterostructure Field-Effect Transistors
... the kink, including detailed DC characterization,2 sidegate measurements,3 and large-signal transient measurements with nanosecond resolution.4 In this work, we have performed these measurements as well as light sensitivity measurements, on the same set of devices. We show that our experimental resu ...
... the kink, including detailed DC characterization,2 sidegate measurements,3 and large-signal transient measurements with nanosecond resolution.4 In this work, we have performed these measurements as well as light sensitivity measurements, on the same set of devices. We show that our experimental resu ...
MAX8791/MAX8791B Single-Phase, Synchronous MOSFET Drivers General Description Features
... The MAX8791/MAX8791B enter into low-power pulseskipping mode when SKIP is pulled low. In skip mode, an inherent automatic switchover to pulse-frequency modulation (PFM) takes place at light loads. A zerocrossing comparator truncates the low-side switch ontime at the inductor current’s zero crossing. ...
... The MAX8791/MAX8791B enter into low-power pulseskipping mode when SKIP is pulled low. In skip mode, an inherent automatic switchover to pulse-frequency modulation (PFM) takes place at light loads. A zerocrossing comparator truncates the low-side switch ontime at the inductor current’s zero crossing. ...
OPA336 OPA2336 OPA4336 SINGLE-SUPPLY,
... Charged Device Model, OPA336 NJ and UJ only (CDM)(4) ....... 1000V Human Body Model (HBM)(4) ......................................................... 500V Machine Model (MM)(4) .................................................................. 100V NOTES: (1) Stresses above these ratings may cause ...
... Charged Device Model, OPA336 NJ and UJ only (CDM)(4) ....... 1000V Human Body Model (HBM)(4) ......................................................... 500V Machine Model (MM)(4) .................................................................. 100V NOTES: (1) Stresses above these ratings may cause ...
FSSD07 1-Bit / 4-Bit SD/SDIO and MMC Dual-Host Multiplexer
... The FSSD07 enables the multiplexing of dual ASIC / baseband processor hosts to a common peripheral card or module, providing bi-directional support of the dualvoltage SD/SDIO or MMC cards available in the marketplace. Each host SDIO port has its own supply rail, such that hosts with different suppl ...
... The FSSD07 enables the multiplexing of dual ASIC / baseband processor hosts to a common peripheral card or module, providing bi-directional support of the dualvoltage SD/SDIO or MMC cards available in the marketplace. Each host SDIO port has its own supply rail, such that hosts with different suppl ...
ADR525 数据手册DataSheet 下载
... band gap concept to produce a stable, low temperature coefficient voltage reference suitable for high accuracy data acquisition components and systems. The devices use the physical nature of a silicon transistor base-emitter voltage (VBE) in the forward-biased operating region. All such transistors ...
... band gap concept to produce a stable, low temperature coefficient voltage reference suitable for high accuracy data acquisition components and systems. The devices use the physical nature of a silicon transistor base-emitter voltage (VBE) in the forward-biased operating region. All such transistors ...
Electron emission from lead–zirconate–titanate ceramics
... of this introduction we shall briefly describe the system under consideration, and outline the new results obtained. In this article we present data describing the performance of diodes with ferroelectric cathodes operating at 1–50 kV and with diode spacings of up to 531022 m. These data extend the ...
... of this introduction we shall briefly describe the system under consideration, and outline the new results obtained. In this article we present data describing the performance of diodes with ferroelectric cathodes operating at 1–50 kV and with diode spacings of up to 531022 m. These data extend the ...
All of the 4 y-parameters, real and imaginary part, versus frequency
... All current gains remain the same, e.g. h21 which is a function of current density, or VBE. ...
... All current gains remain the same, e.g. h21 which is a function of current density, or VBE. ...
MOSFET Switching Loss Model and Optimal Design
... to evaluate the performance of the CSDs. In addition, a generalized method to optimize the overall performance of the buck converter with a CSD is analyzed in the proposed model. A piecewise model that enables quick calculation and estimation of the switching loss is also proposed in [28]. However, ...
... to evaluate the performance of the CSDs. In addition, a generalized method to optimize the overall performance of the buck converter with a CSD is analyzed in the proposed model. A piecewise model that enables quick calculation and estimation of the switching loss is also proposed in [28]. However, ...
60-W, 24-V, High-Efficiency Industrial Power
... controller to achieve high efficiency and optimize power loss. The design has lossless ORing circuit implemented using the LM5050-2 ORing controller for paralleling multiple modules to meet extended high power needs. The design has low standby power of < 200 mW and meets ENERGY STAR rating requireme ...
... controller to achieve high efficiency and optimize power loss. The design has lossless ORing circuit implemented using the LM5050-2 ORing controller for paralleling multiple modules to meet extended high power needs. The design has low standby power of < 200 mW and meets ENERGY STAR rating requireme ...
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)
... From a cost standpoint, the LNA is implemented in 0.13µm RF CMOS technology. Recent works in designing LNA have there have been a difficulty in attaining both low noise figure and low power consumption simultaneously. This paper describes the implementation of LNA using 0.13µm CMOS technology which ...
... From a cost standpoint, the LNA is implemented in 0.13µm RF CMOS technology. Recent works in designing LNA have there have been a difficulty in attaining both low noise figure and low power consumption simultaneously. This paper describes the implementation of LNA using 0.13µm CMOS technology which ...
Multilevel converters
... blocking. Using DaPI of Fig. 1 as an example, when all lower devices, Sa*,-Sa.4 are turned on, Da.] needs to block three capacitor voltages, or 3 Vd#. Similarly, Da2 and Das2need to block 2VdJ4, and Da3needs to block 3 vdJ4. Assuming that each blocking diode voltage rating is the same as the active ...
... blocking. Using DaPI of Fig. 1 as an example, when all lower devices, Sa*,-Sa.4 are turned on, Da.] needs to block three capacitor voltages, or 3 Vd#. Similarly, Da2 and Das2need to block 2VdJ4, and Da3needs to block 3 vdJ4. Assuming that each blocking diode voltage rating is the same as the active ...
Electronics circuits I
... Fig. (1) above shows a two stage RC coupled CE amplifier using BJTs where as fig.(2) shows the FET version. The resistors RC & RB ( = R1R2 / (R1 + R2 ) and capacitors CC form the coupling network. Because of this, the arrangement is called as RC coupled amplifier. The bypass capacitors CE (= CS) are ...
... Fig. (1) above shows a two stage RC coupled CE amplifier using BJTs where as fig.(2) shows the FET version. The resistors RC & RB ( = R1R2 / (R1 + R2 ) and capacitors CC form the coupling network. Because of this, the arrangement is called as RC coupled amplifier. The bypass capacitors CE (= CS) are ...
Datasheet - Monolithic Power System
... accurately controls the LED current using primary-side information. ...
... accurately controls the LED current using primary-side information. ...
4.5V to 18V Input Voltage, 3A/2A/2A Output Current Triple
... Features .................................................................. ...
... Features .................................................................. ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.