BH4301327332
... applications, is the need to provide a regulated output voltage from a battery voltage which, when it is charged or discharged. It can be greater than, less than, or equal to the desired output voltage. There are several existing solutions to this problem. But all have significant drawbacks. They ar ...
... applications, is the need to provide a regulated output voltage from a battery voltage which, when it is charged or discharged. It can be greater than, less than, or equal to the desired output voltage. There are several existing solutions to this problem. But all have significant drawbacks. They ar ...
TLC254, TLC254A, TLC254B, TLC254Y, TLC25L4, TLC25L4A, TLC25L4B
... Texas Instruments silicon gate LinCMOS process, giving them stable input-offset voltages that are available in selected grades of 2, 5, or 10 mV maximum, very high input impedances, and extremely low input offset and bias currents. Because the input common-mode range extends to the negative rail an ...
... Texas Instruments silicon gate LinCMOS process, giving them stable input-offset voltages that are available in selected grades of 2, 5, or 10 mV maximum, very high input impedances, and extremely low input offset and bias currents. Because the input common-mode range extends to the negative rail an ...
TBU-CX050-VTC-WH Datasheet
... Bourns® TBU® high-speed protectors are circuit protection devices constructed using MOSFET semiconductor technology. When placed in series in the system, the TBU® protector monitors the current flowing through the line. If the current exceeds a preset level, the TBU® device triggers, providing an ef ...
... Bourns® TBU® high-speed protectors are circuit protection devices constructed using MOSFET semiconductor technology. When placed in series in the system, the TBU® protector monitors the current flowing through the line. If the current exceeds a preset level, the TBU® device triggers, providing an ef ...
Fourth-Generation Field Stop IGBT with High
... compared to a planar structure. This enables higher ...
... compared to a planar structure. This enables higher ...
BD9130NV
... 5. Consideration on Permissible Dissipation and Heat Generation Since this IC functions with high efficiency without significant heat generation in most applications, no special consideration is needed on permissible dissipation or heat generation. In case of extreme conditions, however, including l ...
... 5. Consideration on Permissible Dissipation and Heat Generation Since this IC functions with high efficiency without significant heat generation in most applications, no special consideration is needed on permissible dissipation or heat generation. In case of extreme conditions, however, including l ...
GTL2003 1. General description 8-bit bidirectional low voltage translator
... port, when the Dn port is HIGH, the voltage on the Sn port is limited to the voltage set by the reference transistor (SREF). When the Sn port is HIGH, the Dn port is pulled to VDD1 by the pull-up resistors. This functionality allows a seamless translation between higher and lower voltages selected b ...
... port, when the Dn port is HIGH, the voltage on the Sn port is limited to the voltage set by the reference transistor (SREF). When the Sn port is HIGH, the Dn port is pulled to VDD1 by the pull-up resistors. This functionality allows a seamless translation between higher and lower voltages selected b ...
DT1446-04V Product Summary Features
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
BD5291G
... (Note 3) The voltage difference between inverting input and non-inverting input is the differential input voltage. Then input pin voltage is set to more than VSS. (Note 4) An excessive input current will flow when input voltages of more than VDD+0.6V or less than VSS-0.6V are applied. The input curr ...
... (Note 3) The voltage difference between inverting input and non-inverting input is the differential input voltage. Then input pin voltage is set to more than VSS. (Note 4) An excessive input current will flow when input voltages of more than VDD+0.6V or less than VSS-0.6V are applied. The input curr ...
Methodology for relative location of voltage sag source using
... sags source. Fig. 1.a illustrates a one-line diagram of a radial distribution system. The network is parameterized by impedances between buses, voltage power quality monitors (PQMs) recording on the buses and finally a load. The analysis begins with the study of the behavior of the recorded voltages ...
... sags source. Fig. 1.a illustrates a one-line diagram of a radial distribution system. The network is parameterized by impedances between buses, voltage power quality monitors (PQMs) recording on the buses and finally a load. The analysis begins with the study of the behavior of the recorded voltages ...
MAX1823/MAX1823A/MAX1823B/MAX1823H Dual USB Switch with Fault Blanking and Autoreset General Description
... Power Input. Connect all IN_ pins together, and bypass with a 0.1µF capacitor to ground. Load conditions may require additional bulk capacitance to prevent the input from being pulled down. ...
... Power Input. Connect all IN_ pins together, and bypass with a 0.1µF capacitor to ground. Load conditions may require additional bulk capacitance to prevent the input from being pulled down. ...
FCX495 Features Mechanical Data
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
LTC3610 - 24V, 12A Monolithic Synchronous Step
... Technology Corporation. All other trademarks are the property of their respective owners. Protected by U.S. Patents including 5481178, 6100678, 6580258, 5847554, 6304066. ...
... Technology Corporation. All other trademarks are the property of their respective owners. Protected by U.S. Patents including 5481178, 6100678, 6580258, 5847554, 6304066. ...
Physics Based Virtual Source Compact Model of
... Arsenide (GaAs) and silicon based transistors for radio frequency (RF) applications in terms of output power and efficiency due to its large bandgap (~3.4 eV@300 K) and high carrier mobility property (1500 – 2300 cm2 /(V ⋅ s)). These advantages have made GaN technology a promising candidate for futu ...
... Arsenide (GaAs) and silicon based transistors for radio frequency (RF) applications in terms of output power and efficiency due to its large bandgap (~3.4 eV@300 K) and high carrier mobility property (1500 – 2300 cm2 /(V ⋅ s)). These advantages have made GaN technology a promising candidate for futu ...
ZXTN4006Z A Product Line of Diodes Incorporated
... Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Inc ...
... Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Inc ...
MAX17024 Single Quick-PWM Step-Down Controller with Dynamic REFIN General Description
... The MAX17024 contains an internal boost switch/diode (see Figure 2). ...
... The MAX17024 contains an internal boost switch/diode (see Figure 2). ...
BQ24765 数据资料 dataSheet 下载
... measurement of input current from the AC adapter, allowing monitoring the overall system power. If the adapter current is above the programmed low-power threshold, a signal is sent to host so that the system optimizes its power performance according to what is available from the adapter. An integrat ...
... measurement of input current from the AC adapter, allowing monitoring the overall system power. If the adapter current is above the programmed low-power threshold, a signal is sent to host so that the system optimizes its power performance according to what is available from the adapter. An integrat ...
MAX3967A 270Mbps SFP LED Driver General Description Features
... The modulation-current generator circuit provides control of the modulation-current amplitude. This amplitude is determined by the voltage at the MODSET pin and external resistor RMODSET. Do not connect bypass capacitors at the MODSET pin. Capacitance at this pin increases high-frequency output nois ...
... The modulation-current generator circuit provides control of the modulation-current amplitude. This amplitude is determined by the voltage at the MODSET pin and external resistor RMODSET. Do not connect bypass capacitors at the MODSET pin. Capacitance at this pin increases high-frequency output nois ...
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)
... Abstract : As the need of handheld devices such as cell phones, speakers, cameras etc., is growing, low power consumption has important design issues for integrated circuits. Level Shifter is an interfacing circuit which can interface low core voltage to high input- output voltage. In order to achie ...
... Abstract : As the need of handheld devices such as cell phones, speakers, cameras etc., is growing, low power consumption has important design issues for integrated circuits. Level Shifter is an interfacing circuit which can interface low core voltage to high input- output voltage. In order to achie ...
DT1446-04SO Product Summary Features
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
ECE444: Theory and Fabrication of Integrated Circuits
... In order for current to flow in a material there must be ‘loose’ electrons. But all the electrons in silicon are working at holding the atoms together, which means it is not a good conductor of current. So what can be done to allow the silicon to conduct current more easily? Free ‘carriers’ of curre ...
... In order for current to flow in a material there must be ‘loose’ electrons. But all the electrons in silicon are working at holding the atoms together, which means it is not a good conductor of current. So what can be done to allow the silicon to conduct current more easily? Free ‘carriers’ of curre ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.