DESD32VS2SO Features Mechanical Data
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
Sixth-Generation V-Series IGBT Module Application
... punch-through IGBT at that time used the Epitaxial wafer, and the low ON-state voltage was materialized by high injection of carrier from the collector side. At the same time, it was necessary to quickly remove the carrier, which was high-injected into the n base layer, at turnoff and so the lifetim ...
... punch-through IGBT at that time used the Epitaxial wafer, and the low ON-state voltage was materialized by high injection of carrier from the collector side. At the same time, it was necessary to quickly remove the carrier, which was high-injected into the n base layer, at turnoff and so the lifetim ...
DESCRIPTION
... polarity can be reversed by a jumper on the K661. When using a style 1, the output polarity may be reversed by reversing the ØA – ØB inputs. The K661 provides a full scale output of ±300 VDC at up to 3 milliamperes of current. The unit can be programmed for 50, 100, or 200 volts per 1000 RPM by a ju ...
... polarity can be reversed by a jumper on the K661. When using a style 1, the output polarity may be reversed by reversing the ØA – ØB inputs. The K661 provides a full scale output of ±300 VDC at up to 3 milliamperes of current. The unit can be programmed for 50, 100, or 200 volts per 1000 RPM by a ju ...
2ch High Side Switch ICs for USB Devices and Memory Cards Datasheet
... When excessive current flows due to output short-circuit or so, ringing occurs because of inductance between power source lines to IC, and may cause bad influences on IC operations. In order to avoid this case, connect a bypass capacitor across IN terminal and GND terminal of IC. 1μF or higher is re ...
... When excessive current flows due to output short-circuit or so, ringing occurs because of inductance between power source lines to IC, and may cause bad influences on IC operations. In order to avoid this case, connect a bypass capacitor across IN terminal and GND terminal of IC. 1μF or higher is re ...
BDTIC CoolMOS™ Primary Side MOSFET Selection for LLC Topology
... Equation (3) as defined appears to formulate the condition for ZVS from the perspective of resonant energy. However, the fact is that equation (3) is derived from the voltage equation of node A and more importantly, the charging/discharging time for the output capacitance of the power MOSFET in the ...
... Equation (3) as defined appears to formulate the condition for ZVS from the perspective of resonant energy. However, the fact is that equation (3) is derived from the voltage equation of node A and more importantly, the charging/discharging time for the output capacitance of the power MOSFET in the ...
D5V0F4U5P5 Features Mechanical Data
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
Rev. A - Texas Instruments
... Programmable current limit, fast shut down, and fault timer protect the load and supply during fault conditions such as a hot - short. The fast shutdown threshold and response time can be tuned to ensure a fast response to real faults, while avoiding nuisance ...
... Programmable current limit, fast shut down, and fault timer protect the load and supply during fault conditions such as a hot - short. The fast shutdown threshold and response time can be tuned to ensure a fast response to real faults, while avoiding nuisance ...
AP3105NA/NV/NL/NR Description Pin Assignments
... thus the PWM drive signal will be stopped, and there is no more new energy transferred due to no switching. Therefore, the IC supply voltage may reduce to the shutdown threshold voltage and system may enter the unexpected restart mode. To avoid this, the AP3105NA/NV/NL/NR hold a so-called VCC mainta ...
... thus the PWM drive signal will be stopped, and there is no more new energy transferred due to no switching. Therefore, the IC supply voltage may reduce to the shutdown threshold voltage and system may enter the unexpected restart mode. To avoid this, the AP3105NA/NV/NL/NR hold a so-called VCC mainta ...
BD95514MUV
... Frequency-adjusting resistance input pin. Attaching a resistance of 30k~300kΩ adjusts the switching frequency from 200 kHz~1MHz (p.11). ・BOOT This pin serves as the power source for the high side of the FET driver. A bootstrap diode is integrated within the IC. The maximum voltage on this pin should ...
... Frequency-adjusting resistance input pin. Attaching a resistance of 30k~300kΩ adjusts the switching frequency from 200 kHz~1MHz (p.11). ・BOOT This pin serves as the power source for the high side of the FET driver. A bootstrap diode is integrated within the IC. The maximum voltage on this pin should ...
ZXTP03200BZ
... Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Inc ...
... Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Inc ...
NXP3875Y; NXP3875G 1. Product profile 50 V, 150 mA NPN general-purpose transistors
... products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using N ...
... products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using N ...
EE414 Lecture Notes (electronic)
... - Silicon is the most widely used semiconductors for VLSI circuits due to: - it is the 2nd most abundant element (25.7%) of the earth’s crust (after oxygen) - it remains a semiconductor at a higher temperature - it can be oxidized very easily EELE 414 – Introduction to VLSI Design ...
... - Silicon is the most widely used semiconductors for VLSI circuits due to: - it is the 2nd most abundant element (25.7%) of the earth’s crust (after oxygen) - it remains a semiconductor at a higher temperature - it can be oxidized very easily EELE 414 – Introduction to VLSI Design ...
Old Company Name in Catalogs and Other Documents
... indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior written consent of Renesas Electronics. Further, you may ...
... indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior written consent of Renesas Electronics. Further, you may ...
MOD II
... voltage should be zero because of closed current path. During –ve half cycle, at the instant (Π+α), a triggering pulse is applied to the forward biased SCR T2,then T2 turned on. As T2 turned on , the supply voltage reverse biases T1 and then it off by the natural commutation. During the period (Π+α) ...
... voltage should be zero because of closed current path. During –ve half cycle, at the instant (Π+α), a triggering pulse is applied to the forward biased SCR T2,then T2 turned on. As T2 turned on , the supply voltage reverse biases T1 and then it off by the natural commutation. During the period (Π+α) ...
Characterization of an n-type 4 kV Silicon GTO for pulsed power
... devices do have several intrinsic deficiencies; specifically high conduction losses which must be dealt with via exhaustive cooling systems, large physical size and high maintenance. Solid state switching devices are an alluring solution to these issues with gas/spark-type devices. This thesis detai ...
... devices do have several intrinsic deficiencies; specifically high conduction losses which must be dealt with via exhaustive cooling systems, large physical size and high maintenance. Solid state switching devices are an alluring solution to these issues with gas/spark-type devices. This thesis detai ...
Op-Amp - Book Spar
... Hence the output voltage is equal to the input voltage. Also, it is in phase with the input voltage. As the output voltage follows the input voltage at all instants, this Op-Amp is called Voltage Follower. ...
... Hence the output voltage is equal to the input voltage. Also, it is in phase with the input voltage. As the output voltage follows the input voltage at all instants, this Op-Amp is called Voltage Follower. ...
PDF: 1.49MB
... Mini DIPIPM Ver.4 is an ultra-small compact intelligent power module with transfer mold package favorable for larger mass production. Power chips, drive and protection circuits are integrated in the module, which makes it easy for AC100-200V class low power motor inverter control. Fig.1-1, Fig.1-2 a ...
... Mini DIPIPM Ver.4 is an ultra-small compact intelligent power module with transfer mold package favorable for larger mass production. Power chips, drive and protection circuits are integrated in the module, which makes it easy for AC100-200V class low power motor inverter control. Fig.1-1, Fig.1-2 a ...
FDMF6706C – Extra-Small, High-Performance, High- Frequency DrMOS Module FD MF6706C
... © 2011 Fairchild Semiconductor Corporation FDMF6706C • Rev. 1.0 3 ...
... © 2011 Fairchild Semiconductor Corporation FDMF6706C • Rev. 1.0 3 ...
Transistor
.jpg?width=300){kind=spacer}
A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.