3 The TTL NAND Gate
... Fig. 3.1 Multiple Input Emitter Structure of TTL If any input is low, the corresponding base-emitter junction becomes forward-biased and the transistor conducts. The other characteristics of the circuit and its transfer characteristic are identical to those of the inverter circuit. ...
... Fig. 3.1 Multiple Input Emitter Structure of TTL If any input is low, the corresponding base-emitter junction becomes forward-biased and the transistor conducts. The other characteristics of the circuit and its transfer characteristic are identical to those of the inverter circuit. ...
Lecture1_26.09.2013
... the speed at which a given amount of energy can be stored on the gate capacitors. • The product of power consumption and propagation delay is generally a constant. This product is called the power-delay product (or PDP) and can be considered as a quality measure for a switching device. The PDP is si ...
... the speed at which a given amount of energy can be stored on the gate capacitors. • The product of power consumption and propagation delay is generally a constant. This product is called the power-delay product (or PDP) and can be considered as a quality measure for a switching device. The PDP is si ...
2SD2142K
... otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. ...
... otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. ...
SOT-723 Plastic-Encapsulate Diodes 5V0AT7 CESDLC
... DESCRIPTION The CESDLC5V0AT7 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 p ...
... DESCRIPTION The CESDLC5V0AT7 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 p ...
review for elec 105 midterm exam #1 (fall 2001)
... change across a DC voltage source) and DC current sources with open circuits (because current through DC current source can’t change) why DC voltage sources are typically bypassed at AC (i.e., at signal frequency) using capacitors derivation of small-signal voltage gain for all kinds of BJT and FET ...
... change across a DC voltage source) and DC current sources with open circuits (because current through DC current source can’t change) why DC voltage sources are typically bypassed at AC (i.e., at signal frequency) using capacitors derivation of small-signal voltage gain for all kinds of BJT and FET ...
The Design Process Abstraction & Synthesis
... • Voltage Range (Full Charge to Discharge) • Number of Cells Required • Battery Life (ie. mA Hr Capacity) ...
... • Voltage Range (Full Charge to Discharge) • Number of Cells Required • Battery Life (ie. mA Hr Capacity) ...
NSS40200UW6T1G
... ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any partic ...
... ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any partic ...
Hall Effect Devices as Current Sensors
... Hall Effect Devices as Current Sensors We are probably all familiar with semiconductor devices that respond to light or heat. Light (photons) and heat (phonons) increase minority current carriers in reverse biased semiconductors and thus increase conduction. Light and heat after all are just electro ...
... Hall Effect Devices as Current Sensors We are probably all familiar with semiconductor devices that respond to light or heat. Light (photons) and heat (phonons) increase minority current carriers in reverse biased semiconductors and thus increase conduction. Light and heat after all are just electro ...
Circuits - Instructor Outline - University of Michigan SharePoint Portal
... The gesture can travel faster than individuals can move. Application stage: 40 minutes – Group Lab-Work The students measure voltage and current to calculate power. They build different types of circuits including series and parallel to observe electron paths. They also build other types of circuits ...
... The gesture can travel faster than individuals can move. Application stage: 40 minutes – Group Lab-Work The students measure voltage and current to calculate power. They build different types of circuits including series and parallel to observe electron paths. They also build other types of circuits ...
PHYS 210 Electronic Circuits and Feedback These notes give a
... Thermistor glued to a power resistor. The thermistor is a temperature sensor whose resistance drops very quickly with increasing temperature. It is based on an undopped semiconductor. At room temperature the resistance is about 10 kΩ and it drops about 5%/°C. The power resistor will be used to heat ...
... Thermistor glued to a power resistor. The thermistor is a temperature sensor whose resistance drops very quickly with increasing temperature. It is based on an undopped semiconductor. At room temperature the resistance is about 10 kΩ and it drops about 5%/°C. The power resistor will be used to heat ...
W005G-W10G 1.5 Ampere Glass Passivated Bridge Rectifiers
... support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when ...
... support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when ...
Digital devices based on lambda diodes
... A lambda-transistors described above have a significant obstruction. This is a possibility of control JFET's gate junction to obtain a forward-bias state. This possibility prevents to easily build CJFET logic gates. There is alternative variant: this is a using of depletion-type metal oxide semicond ...
... A lambda-transistors described above have a significant obstruction. This is a possibility of control JFET's gate junction to obtain a forward-bias state. This possibility prevents to easily build CJFET logic gates. There is alternative variant: this is a using of depletion-type metal oxide semicond ...
mosfet based boost converter
... A Boost DC-DC converter is essentially a step up chopper for which the average output voltage is higher than the input voltage. Hence the name is boost. The circuit operation can be divided into 2 modes Mode 1 begins when MOSFET is switched on at t=0. The input current, which rises flows through fil ...
... A Boost DC-DC converter is essentially a step up chopper for which the average output voltage is higher than the input voltage. Hence the name is boost. The circuit operation can be divided into 2 modes Mode 1 begins when MOSFET is switched on at t=0. The input current, which rises flows through fil ...
UML1N
... otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. ...
... otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. ...
electrical and computer engineering 4214 - adsel
... Having successfully completed 4214, students will be able to: • Determine the band structure of semiconductors when supplied with basic materials properties and applying their knowledge of quantum mechanics. • Calculate carrier distributions in thermal equilibrium and non-thermal equilibrium conditi ...
... Having successfully completed 4214, students will be able to: • Determine the band structure of semiconductors when supplied with basic materials properties and applying their knowledge of quantum mechanics. • Calculate carrier distributions in thermal equilibrium and non-thermal equilibrium conditi ...
LTC Design Note: High-voltage CMOS amplifier enables high
... to an inconspicuous level, but even this can introduce significant error, particularly in higher voltage circuits that involve high resistances. The solution is to use high impedance amplifiers in an electrometer configuration, so only miniscule amplifier input current comes from the test node. To m ...
... to an inconspicuous level, but even this can introduce significant error, particularly in higher voltage circuits that involve high resistances. The solution is to use high impedance amplifiers in an electrometer configuration, so only miniscule amplifier input current comes from the test node. To m ...
Electronics
... B. Complete the text about electronics by choosing a word from the box: diodes • semiconductor • electrons • devices • germanium • transistors • integrated circuits • capacitors • silicon • integrated • resistors Electronic circuits are built from basic components. (a) __________ are the most import ...
... B. Complete the text about electronics by choosing a word from the box: diodes • semiconductor • electrons • devices • germanium • transistors • integrated circuits • capacitors • silicon • integrated • resistors Electronic circuits are built from basic components. (a) __________ are the most import ...
1 Alternating Current (AC) Current that constantly and rapidly
... A device for changing an alternating voltage from one value to another which by the principle of electromagnetic induction. An alternating current in the primary coil creates an alternating magnetic field, which induces an alternating current in the secondary coil. The ratio of the voltage in the se ...
... A device for changing an alternating voltage from one value to another which by the principle of electromagnetic induction. An alternating current in the primary coil creates an alternating magnetic field, which induces an alternating current in the secondary coil. The ratio of the voltage in the se ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.