isscc 2012 / session 18 / innovative circuits in
... 18.3.3b presents the data extractor schematic for the input decoder, which extracts both the data and the clock from the rectified RF signal. After 3 inverter stages for restoring the input signal to the logic levels, a dedicated delay gate is used (ΔT in Fig. 18.3.3b). The logic one (25% active hig ...
... 18.3.3b presents the data extractor schematic for the input decoder, which extracts both the data and the clock from the rectified RF signal. After 3 inverter stages for restoring the input signal to the logic levels, a dedicated delay gate is used (ΔT in Fig. 18.3.3b). The logic one (25% active hig ...
TIP145 / TIP146 / TIP147 PNP Epitaxial Silicon Darlington Transistor Features
... and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ...
... and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ...
ESD0P4RFL - Infineon
... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expect ...
... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expect ...
BTEC-Electronics
... 3.3 Determination of gain using a load line 3.3.5 Voltage Gain of a FET Amplifier ◆ The voltage gain of a fet can also be found with the aid of a load line. For example, Fig. 3.13 shows an ac load line drawn on the drain characteristics of a fet and the dotted projections from the load line show how ...
... 3.3 Determination of gain using a load line 3.3.5 Voltage Gain of a FET Amplifier ◆ The voltage gain of a fet can also be found with the aid of a load line. For example, Fig. 3.13 shows an ac load line drawn on the drain characteristics of a fet and the dotted projections from the load line show how ...
AN11045 Next generation of NXP low VCEsat transistors: improved
... collector-emitter saturation resistance has been reduced towards values which were known from MOSFETs only. NXP Semiconductors latest generation of medium-power low collector-emitter saturation voltage VCEsat transistors in Surface-Mounted Design (SMD) packages opens a new field of applications. Swi ...
... collector-emitter saturation resistance has been reduced towards values which were known from MOSFETs only. NXP Semiconductors latest generation of medium-power low collector-emitter saturation voltage VCEsat transistors in Surface-Mounted Design (SMD) packages opens a new field of applications. Swi ...
Radiation Effects of SiGe and III-V Based Material
... as the major source of degradation in Si transistors is the ionization damage in the emitter-base (EB) spacer oxide. The radiation hardness of SiGe HBTs, is a result of their natural structural properties that is the heavily doped extrinsic base region, very thin EB spacer, and very small active vo ...
... as the major source of degradation in Si transistors is the ionization damage in the emitter-base (EB) spacer oxide. The radiation hardness of SiGe HBTs, is a result of their natural structural properties that is the heavily doped extrinsic base region, very thin EB spacer, and very small active vo ...
Make an ioniser.
... careful to tin all the connections with solder before assembling them since soldering four loose connections together can be quite awkward, even when the capacitors have been stuck together rigidly. As a timely reminder, the diodes should all point with their marker band towards the mains end of the ...
... careful to tin all the connections with solder before assembling them since soldering four loose connections together can be quite awkward, even when the capacitors have been stuck together rigidly. As a timely reminder, the diodes should all point with their marker band towards the mains end of the ...
MJD44H11T4-A
... WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS ...
... WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS ...
TIP140T / TIP141T / TIP142T NPN Epitaxial Silicon Darlington Transistor T IP
... and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ...
... and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ...
EM41_S_MN_R1
... delivering AC power to residents of London. In the United States, Edison and his DC power faced off against George Westinghouse and Nikola Telsa and their AC power. In the end, AC power won out as the primary power delivery method. AC power can be transmitted much greater distances than DC power. DC ...
... delivering AC power to residents of London. In the United States, Edison and his DC power faced off against George Westinghouse and Nikola Telsa and their AC power. In the end, AC power won out as the primary power delivery method. AC power can be transmitted much greater distances than DC power. DC ...
DATA SHEET BFS20 NPN medium frequency transistor
... not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environ ...
... not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environ ...
Inclusion of Switching Loss in the Averaged Equivalent Circuit Model
... Load resistance 60 Recovered charge 5 µCoul Reverse recovery time 100 nsec Inductor resistance RL = 0.3 (inductor resistance also inserted into averaged model here) ...
... Load resistance 60 Recovered charge 5 µCoul Reverse recovery time 100 nsec Inductor resistance RL = 0.3 (inductor resistance also inserted into averaged model here) ...
GSR - switching regulator modules High-efficiency step-down switching regulator modules
... GS-R12F and 500 kHz for GS-R12FP. The GSR modules include all the components required to drive the ST embedded regulator, providing a plug and play-like point of regulation. The main features common to the GSR family are: pulse-by-pulse and frequency foldback current protection, overvoltage protecti ...
... GS-R12F and 500 kHz for GS-R12FP. The GSR modules include all the components required to drive the ST embedded regulator, providing a plug and play-like point of regulation. The main features common to the GSR family are: pulse-by-pulse and frequency foldback current protection, overvoltage protecti ...
DATA SHEET PMBT6428; PMBT6429 NPN general purpose transistors
... not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environ ...
... not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environ ...
Maksim Kuzmenka
... Definition and development of DDR memory interfaces, like a data bus, command/address bus, clock distribution network at GHz range signaling on the system and PCB level. Development of JEDEC standards for DDR2 and DDR3 memory generations. Simulation support of the memory module (DIMM and SODIMM) ...
... Definition and development of DDR memory interfaces, like a data bus, command/address bus, clock distribution network at GHz range signaling on the system and PCB level. Development of JEDEC standards for DDR2 and DDR3 memory generations. Simulation support of the memory module (DIMM and SODIMM) ...
Transient Voltage Suppression Diode Application Notes
... determined. For better performance, the device should be placed as close to the signal input as possible and ahead of any other component. Due to the high current associated with an ESD event, it is recommended to use a “0-stub” pad design (pad directly on the signal/data line and second pad directl ...
... determined. For better performance, the device should be placed as close to the signal input as possible and ahead of any other component. Due to the high current associated with an ESD event, it is recommended to use a “0-stub” pad design (pad directly on the signal/data line and second pad directl ...
Improved Reset / Power Down Alarm Circuit
... Here VIN is not near 5 volts, but at some voltage above the regulator drop out voltage1 and below the normal operating voltage. At power down this voltage will decline well before the supply voltage. The result is that the PIC MCLR line will be brought to Vss level while its supply voltage (VDD-VSS) ...
... Here VIN is not near 5 volts, but at some voltage above the regulator drop out voltage1 and below the normal operating voltage. At power down this voltage will decline well before the supply voltage. The result is that the PIC MCLR line will be brought to Vss level while its supply voltage (VDD-VSS) ...
Role of Semiconductor Devices in Portable Electronics Power
... The broad function of voltage regulation includes both off-line (AC-DC), switch-mode (DC-DC) converters and low dropout regulators (LDOs). The AC line supply of 115V/220V is rectified, filtered and converted to a lower level supply rail and/or charges the battery. Power is supplied via a main power ...
... The broad function of voltage regulation includes both off-line (AC-DC), switch-mode (DC-DC) converters and low dropout regulators (LDOs). The AC line supply of 115V/220V is rectified, filtered and converted to a lower level supply rail and/or charges the battery. Power is supplied via a main power ...
XBS203V17R-G - uri=media.digikey
... protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant in ...
... protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant in ...
GaN – Moving Quickly into Entirely New Markets
... aspects outside the active power devices, such as high speed gate drivers and printed circuit board layout. In this article, the latest family of high frequency enhancement mode Gallium Nitride power transistors (eGaN FETs) is presented for use in multi megahertz buck converters. These devices were ...
... aspects outside the active power devices, such as high speed gate drivers and printed circuit board layout. In this article, the latest family of high frequency enhancement mode Gallium Nitride power transistors (eGaN FETs) is presented for use in multi megahertz buck converters. These devices were ...
OCET-2012 Question Booklet Series : A Sr. No. :
... (C) voltage leads the current (D) current and voltage aline 49. Latching current of an SCR is ________ of the rated current. (A) Below 10% (B) 10–20% (C) 20–25% (D) 25–30% 50. Breakdown in a silicon UJT was observed to occur at a voltage of 6 V for a VBB = 10 V. Its (stand off ratio) is : (A) 1.66 ...
... (C) voltage leads the current (D) current and voltage aline 49. Latching current of an SCR is ________ of the rated current. (A) Below 10% (B) 10–20% (C) 20–25% (D) 25–30% 50. Breakdown in a silicon UJT was observed to occur at a voltage of 6 V for a VBB = 10 V. Its (stand off ratio) is : (A) 1.66 ...
DC Circuits I - Galileo and Einstein
... has been doped—atoms having one more electron than the insulator atoms are scattered into it. • The extra electron circles the dopant atom, but is loosely bound because the dielectric shields the electric field. As the temperature is raised, these electrons break away from their atoms, and become av ...
... has been doped—atoms having one more electron than the insulator atoms are scattered into it. • The extra electron circles the dopant atom, but is loosely bound because the dielectric shields the electric field. As the temperature is raised, these electrons break away from their atoms, and become av ...
RD00HHS1 数据资料DataSheet下载
... 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpos ...
... 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpos ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.