Material Properties
... It can incorporate innumerable components of different types, (passive and active) into a small chip to form a complete microwave subsystem. Size, weight and cost are reduced much. ...
... It can incorporate innumerable components of different types, (passive and active) into a small chip to form a complete microwave subsystem. Size, weight and cost are reduced much. ...
Electrochemical Sensing Elements
... control of a current flowing between two semiconductor electrodes. Drain and source are placed on the same element, with a third electrode, the gate, between them. The metallic gate electrode is insulated against drain and source by means of silicon dioxide and can only influence the drainsource cur ...
... control of a current flowing between two semiconductor electrodes. Drain and source are placed on the same element, with a third electrode, the gate, between them. The metallic gate electrode is insulated against drain and source by means of silicon dioxide and can only influence the drainsource cur ...
High-voltage power supply, 25 kV
... The high voltage power supply 25 kV fulfills the safety requirements for electrical equipment for measurement, control and laboratory use according to DIN EN 61010 part 1 and is constructed so as to fulfill the requirements of protection class II. It is intended for operation in dry rooms which are ...
... The high voltage power supply 25 kV fulfills the safety requirements for electrical equipment for measurement, control and laboratory use according to DIN EN 61010 part 1 and is constructed so as to fulfill the requirements of protection class II. It is intended for operation in dry rooms which are ...
Sinterglass Avalanche Diodes for Power-Factor
... To be able to control the current through the boost inductor, the output voltage of the PFC has to be higher at every moment of operation than the crest of the line input voltage. For 230 V mains the DC output should be about 400 V. A large capacitor at the ouput does not affect the power factor, bu ...
... To be able to control the current through the boost inductor, the output voltage of the PFC has to be higher at every moment of operation than the crest of the line input voltage. For 230 V mains the DC output should be about 400 V. A large capacitor at the ouput does not affect the power factor, bu ...
GS5802 - Globaltech Semiconductor
... Input and output ceramic capacitors of 22μF are recommended for GS5802 applications. For better voltage filtering, ceramic capacitors with low ESR are recommended. X5R and X7R types are suitable because of their wider voltage and temperature ranges. Diode Selection Schottky diode is a good choice fo ...
... Input and output ceramic capacitors of 22μF are recommended for GS5802 applications. For better voltage filtering, ceramic capacitors with low ESR are recommended. X5R and X7R types are suitable because of their wider voltage and temperature ranges. Diode Selection Schottky diode is a good choice fo ...
Design and Analysis of High Gain CMOS Telescopic OTA in 180nm
... miniature devices, so it is a challenge to design a low power OTA. There is a trade-off between speed, gain and power for an OTA design since these parameters are contradicting each other. There are mainly four different types of OTAs: two stage OTAs, folded-cascode OTAs, telescopic OTAs, flavours o ...
... miniature devices, so it is a challenge to design a low power OTA. There is a trade-off between speed, gain and power for an OTA design since these parameters are contradicting each other. There are mainly four different types of OTAs: two stage OTAs, folded-cascode OTAs, telescopic OTAs, flavours o ...
Static Power Reduction Using Programmable Multi
... the system provided that these parts can wake up fast upon request. The long wake-up time of power switches prohibits their use in such cases too. In particular, this technique requires that the memory elements (flip-flops) are forced to specific logic values prior to the activation of a power-off m ...
... the system provided that these parts can wake up fast upon request. The long wake-up time of power switches prohibits their use in such cases too. In particular, this technique requires that the memory elements (flip-flops) are forced to specific logic values prior to the activation of a power-off m ...
Dual Schottky Barrier Diode, 2 V
... "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportati ...
... "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportati ...
AN-9066 UniFET — Optimized Switch for Discontinuous Current
... rating to the planar MOSFETs at unit area; however, its practical rating as a single device is still inferior to planar MOSFETs because of smaller die size. The UIS ruggedness of UniFET is also far better than previous generations of planar technology. For an example, a 265mΩ, 500V UniFET shows more ...
... rating to the planar MOSFETs at unit area; however, its practical rating as a single device is still inferior to planar MOSFETs because of smaller die size. The UIS ruggedness of UniFET is also far better than previous generations of planar technology. For an example, a 265mΩ, 500V UniFET shows more ...
Varistors SMOV34S Datasheet
... An Underwriters Laboratory standard covering the safety requirements for Surge Protective Devices intended for permanently connected, cord-connected and direct plug-in applications. ...
... An Underwriters Laboratory standard covering the safety requirements for Surge Protective Devices intended for permanently connected, cord-connected and direct plug-in applications. ...
The PLH Amplifier By Nelson Pass Introduction
... As you turn P2 clockwise (note the “cw” on the schematic), a greater percentage of current comes from the upper device Q3, and as you turn it counter-clockwise, a greater percentage comes from the lower device Q2. Fully counter-clockwise results in the upper transistor bank functioning as a constan ...
... As you turn P2 clockwise (note the “cw” on the schematic), a greater percentage of current comes from the upper device Q3, and as you turn it counter-clockwise, a greater percentage comes from the lower device Q2. Fully counter-clockwise results in the upper transistor bank functioning as a constan ...
Modification of Commercial Fault Calculation Programs for Wind
... Figure ???? Type 4 WTGto Short Circuit • Current is usually limited the order of 1.1-1.5 per unit Representation of rated current and only provides balanced positive current source limited to 1.1 pu postive sequenceConstant symmetrical current regardless of the type of sequence current fault. • Manu ...
... Figure ???? Type 4 WTGto Short Circuit • Current is usually limited the order of 1.1-1.5 per unit Representation of rated current and only provides balanced positive current source limited to 1.1 pu postive sequenceConstant symmetrical current regardless of the type of sequence current fault. • Manu ...
Hoefling_2017_APL_MemristiveModes_AAM
... The development of association with a single pulse in Fig. 4(b) is not practical and it would be desirable to control the number of pulses. To investigate varying pulse numbers, the width of the input signals and the amplitude of Vr,2 are varied in Figs. 4(c) and (d), respectively. In both figures, ...
... The development of association with a single pulse in Fig. 4(b) is not practical and it would be desirable to control the number of pulses. To investigate varying pulse numbers, the width of the input signals and the amplitude of Vr,2 are varied in Figs. 4(c) and (d), respectively. In both figures, ...
DIM1500ESM33-TL000 - Dynex Semiconductor
... Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application. The user must evaluate the suitability of the product and the completeness of the product data fo ...
... Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application. The user must evaluate the suitability of the product and the completeness of the product data fo ...
CPC1964B - IXYS Integrated Circuits Division
... IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor ...
... IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor ...
ee221_9
... Time Domain Response of First-Order Circuit: A phasor analysis of a circuit only provides a description of voltage and current steady-state behavior. When the source waveform changes at some time t0, a transient response is produced, which dies out over a period of time leaving the new steady state ...
... Time Domain Response of First-Order Circuit: A phasor analysis of a circuit only provides a description of voltage and current steady-state behavior. When the source waveform changes at some time t0, a transient response is produced, which dies out over a period of time leaving the new steady state ...
A 125 MHz Burst-Mode Flexible Read While Write 256Mbit 2b/c 1.8V
... A constant high voltage is applied to all cells (higher than the largest Vth) resulting in wide range of current: The circuit should have the ability to work in wide range of current from a few uA to several tens of uA ...
... A constant high voltage is applied to all cells (higher than the largest Vth) resulting in wide range of current: The circuit should have the ability to work in wide range of current from a few uA to several tens of uA ...
Introduction to Voltage Source Inverters
... different kinds of transistors, one n-p-n type and the other p-n-p type. The switching speeds of np-n and p-n-p transistors are widely different unless they are produced carefully as matched pairs. In power electronic applications, n-p-n transistors are preferred as they can operate at higher switch ...
... different kinds of transistors, one n-p-n type and the other p-n-p type. The switching speeds of np-n and p-n-p transistors are widely different unless they are produced carefully as matched pairs. In power electronic applications, n-p-n transistors are preferred as they can operate at higher switch ...
Applications of Diodes Word Document
... these high powered output devices can damage npn transistors, MOSFET’s and thyristors when they switch off because they generate a very high reverse voltage. You may think that protecting the npn transistor, MOSFET and thyristor would be very complicated but in reality it is very easy, and requires ...
... these high powered output devices can damage npn transistors, MOSFET’s and thyristors when they switch off because they generate a very high reverse voltage. You may think that protecting the npn transistor, MOSFET and thyristor would be very complicated but in reality it is very easy, and requires ...
AN11045 Next generation of NXP low VCEsat transistors
... collector-emitter saturation resistance has been reduced towards values which were known from MOSFETs only. NXP Semiconductors latest generation of medium-power low collector-emitter saturation voltage VCEsat transistors in Surface-Mounted Design (SMD) packages opens a new field of applications. Swi ...
... collector-emitter saturation resistance has been reduced towards values which were known from MOSFETs only. NXP Semiconductors latest generation of medium-power low collector-emitter saturation voltage VCEsat transistors in Surface-Mounted Design (SMD) packages opens a new field of applications. Swi ...
CN-0036 8位至12位DAC AD5426/AD5432/AD5443的精密、双极性配置
... number of bits: D = 0 to 255 (8-bit AD5426), D = 0 to 1023 (10-bit AD5432), and D = 0 to 4095 (12-bit AD5443). In some applications, it may be necessary to generate a full 4-quadrant multiplying operation or a bipolar output swing. This can easily be accomplished by using another external amplifier ...
... number of bits: D = 0 to 255 (8-bit AD5426), D = 0 to 1023 (10-bit AD5432), and D = 0 to 4095 (12-bit AD5443). In some applications, it may be necessary to generate a full 4-quadrant multiplying operation or a bipolar output swing. This can easily be accomplished by using another external amplifier ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.