Data Sheet WHITE LED STEP-UP CONVERTER AP3032 General
... The AP3032 is a boost DC-DC converter which uses a constant frequency, current mode control scheme to provide excellent line and load regulation. Operation can be best understood by referring to the Figure 21. At the start of each oscillator cycle, switch Q1 turns on. The switch current will increas ...
... The AP3032 is a boost DC-DC converter which uses a constant frequency, current mode control scheme to provide excellent line and load regulation. Operation can be best understood by referring to the Figure 21. At the start of each oscillator cycle, switch Q1 turns on. The switch current will increas ...
Implementation of Ternary Logic Circuits
... more complicated because the elements in a circuit must deal with multivalued signals. MVL can be implemented using different kinds of devices like resonant tunneling diodes [4]–[6], resonant tunneling transistors [7]–[9], modulationdoped FETs [10]–[12], high electron mobility transistors [13]–[15], ...
... more complicated because the elements in a circuit must deal with multivalued signals. MVL can be implemented using different kinds of devices like resonant tunneling diodes [4]–[6], resonant tunneling transistors [7]–[9], modulationdoped FETs [10]–[12], high electron mobility transistors [13]–[15], ...
MOS Current Mode Logic for Low Power, Low Noise CORDIC
... The recent development in VLSI technology has allowed rapid growth in the area of portable electronic devices. One of the limiting factors in the deployment of these devices is the battery life and power consumption of the circuitry. It is critical in future circuits that power be minimized beyond m ...
... The recent development in VLSI technology has allowed rapid growth in the area of portable electronic devices. One of the limiting factors in the deployment of these devices is the battery life and power consumption of the circuitry. It is critical in future circuits that power be minimized beyond m ...
AN-1533 Over Voltage Protection Circuit for
... other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or endorsement thereof. ...
... other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or endorsement thereof. ...
UC2853 数据资料 dataSheet 下载
... Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant ...
... Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant ...
IGC136T170S8RH2
... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automo ...
... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automo ...
Dist Training materials HK & China Jun 07 Ver3.0
... - 4x to 8x larger pack above 100V or at <4.5V gate drive NXP, On-Semi, Fairchild, Sanyo bipolars give; -only 50% peak current in equivalent footprint- ZTX up to 20A Maxim, Micrel, TI Gate driver IC’s are : -3x to 10x the cost, 10A peak current costs >$1, <20V NXP, On-Semi, Fairchild & many others ...
... - 4x to 8x larger pack above 100V or at <4.5V gate drive NXP, On-Semi, Fairchild, Sanyo bipolars give; -only 50% peak current in equivalent footprint- ZTX up to 20A Maxim, Micrel, TI Gate driver IC’s are : -3x to 10x the cost, 10A peak current costs >$1, <20V NXP, On-Semi, Fairchild & many others ...
Evaluates: MAX16802B MAX16802B Evaluation Kit General Description Features
... The MAX16802B EV kit is fully assembled and tested. Follow these steps to verify operation. Do not turn on the power supply until all connections are completed. 1) Connect a DC power supply (0 to 30V or above, 1A) to +VIN and GND. 2) Connect a voltmeter or oscilloscope and the LED array (connected i ...
... The MAX16802B EV kit is fully assembled and tested. Follow these steps to verify operation. Do not turn on the power supply until all connections are completed. 1) Connect a DC power supply (0 to 30V or above, 1A) to +VIN and GND. 2) Connect a voltmeter or oscilloscope and the LED array (connected i ...
FOD060L_FOD260L - 3.3V/5V High Speed
... arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance w ...
... arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance w ...
BDTIC
... An acceptable voltage change at a single switching cycle of about dUC=400mV is reasonable. Putting this into the equation we derive Cbias=2*Qg/dUc=2*215nC/400mV=1.07µF. In order to compensate the displacing energy from the source inductance seen as a ground bouncing voltage peak at turn on and turn ...
... An acceptable voltage change at a single switching cycle of about dUC=400mV is reasonable. Putting this into the equation we derive Cbias=2*Qg/dUc=2*215nC/400mV=1.07µF. In order to compensate the displacing energy from the source inductance seen as a ground bouncing voltage peak at turn on and turn ...
TPS2041, TPS2051 - Power-Distribution
... The TPS2041 and TPS2051 power distribution switches are intended for applications where heavy capacitive loads and short circuits are likely to be encountered. The TPS2041 and the TPS2051 are 135-mΩ N-channel MOSFET high-side power switches. Each switch is controlled by a logic enable compatible wit ...
... The TPS2041 and TPS2051 power distribution switches are intended for applications where heavy capacitive loads and short circuits are likely to be encountered. The TPS2041 and the TPS2051 are 135-mΩ N-channel MOSFET high-side power switches. Each switch is controlled by a logic enable compatible wit ...
Gates and Circuits
... How do we describe the behavior of gates and circuits? Boolean expressions: Uses Boolean algebra, a mathematical notation for expressing two-valued logic Logic diagrams: A graphical representation of a circuit; each gate has its own symbol Truth tables: A table showing all possible input value ...
... How do we describe the behavior of gates and circuits? Boolean expressions: Uses Boolean algebra, a mathematical notation for expressing two-valued logic Logic diagrams: A graphical representation of a circuit; each gate has its own symbol Truth tables: A table showing all possible input value ...
ACS754xCB-050
... Sensitivity (Sens). The change in sensor output in response to a 1 A change through the primary conductor. The sensitivity is the product of the magnetic circuit sensitivity (G / A) and the linear IC amplifier gain (mV/G). The linear IC amplifier gain is programmed at the factory to optimize the sen ...
... Sensitivity (Sens). The change in sensor output in response to a 1 A change through the primary conductor. The sensitivity is the product of the magnetic circuit sensitivity (G / A) and the linear IC amplifier gain (mV/G). The linear IC amplifier gain is programmed at the factory to optimize the sen ...
FFPF10UP60S 10 A, 600 V Ultrafast Diode — Ultrafast Diode Features
... and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ...
... and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ...
Electrical Characteristics and Thermal Reliability of Stacked
... used as a switching device, an output driver and for general ESD protection in high voltage ICs. However, when a LDMOSFET is used as an ESD protection device, the LDMOSFET is inherently weak with respect to both ESD robustness and ESD reliability [2]. Due to the strong snap-back characteristics of L ...
... used as a switching device, an output driver and for general ESD protection in high voltage ICs. However, when a LDMOSFET is used as an ESD protection device, the LDMOSFET is inherently weak with respect to both ESD robustness and ESD reliability [2]. Due to the strong snap-back characteristics of L ...
OPA1013 Precision, Single-Supply DUAL OPERATIONAL AMPLIFIER FEATURES
... The OPA1013 is specified for operation from a single power supply. This means that linear operation continues with the input terminals at (or even somewhat below) ground potential. When used in a non-inverting amplifier, 0V input must produce 0V output. In practice, the output swing is limited to ap ...
... The OPA1013 is specified for operation from a single power supply. This means that linear operation continues with the input terminals at (or even somewhat below) ground potential. When used in a non-inverting amplifier, 0V input must produce 0V output. In practice, the output swing is limited to ap ...
SIGC185T170R2C IGBT Chip in NPT-technology
... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automo ...
... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automo ...
Considerations for the Application of Thyristor Controlled Series
... In distribution systems, reactive power compensation is typically provided by shunt-connected components, such as SVC and STATCOM devices. Fixed series capacitors are clearly the most economical solution, but their optimal location is not easy to determine, when many loads are connected to the distr ...
... In distribution systems, reactive power compensation is typically provided by shunt-connected components, such as SVC and STATCOM devices. Fixed series capacitors are clearly the most economical solution, but their optimal location is not easy to determine, when many loads are connected to the distr ...
EC6201
... CC - Hybrid - π model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter transistor. ...
... CC - Hybrid - π model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter transistor. ...
RA55H3847M 数据资料DataSheet下载
... 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpos ...
... 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpos ...
Section B4: Diode Equivalent Circuit Models
... ¾ Ideal diode: VON = 0, Rr = ∞ and Rf = 0. In other words, the ideal diode is a short in the forward bias region and an open in the reverse bias region. ¾ Practical diode (silicon): VON = 0.7V, Rr < ∞ (typically several MΩ), Rf ≈ rd (typically < 50 Ω). The general representation for a practical diod ...
... ¾ Ideal diode: VON = 0, Rr = ∞ and Rf = 0. In other words, the ideal diode is a short in the forward bias region and an open in the reverse bias region. ¾ Practical diode (silicon): VON = 0.7V, Rr < ∞ (typically several MΩ), Rf ≈ rd (typically < 50 Ω). The general representation for a practical diod ...
HIGH PRECISION SOURCE MEASURE UNIT MODEL 52400 SERIES
... A solar cell has a diode structure type which can be characterized by I-V sweep. The nature of energy generation requires the unique load sweep for light forward I-V curve that is used to derive most of the important parameters of a solar cell. A voltage source will then be required for reverse perf ...
... A solar cell has a diode structure type which can be characterized by I-V sweep. The nature of energy generation requires the unique load sweep for light forward I-V curve that is used to derive most of the important parameters of a solar cell. A voltage source will then be required for reverse perf ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.