FSB50550A / FSB50550AT Motion SPM 5 Series ®
... 1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM® 5 product. VPN should be sufficiently less than this value considering the effect of the stray inductance so that VPN should not exceed BVDSS in any case. 2. tON and tOFF include the p ...
... 1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM® 5 product. VPN should be sufficiently less than this value considering the effect of the stray inductance so that VPN should not exceed BVDSS in any case. 2. tON and tOFF include the p ...
DC to DC CONVERSION (CHOPPER)
... • NOTE: Output of a buck-boost converter either be higher or lower than input. – If D>0.5, output is higher than input – If D<0.5, output is lower input • Output voltage is always negative. • Note that output is never directly connected to load. • Energy is stored in inductor when switch is closed a ...
... • NOTE: Output of a buck-boost converter either be higher or lower than input. – If D>0.5, output is higher than input – If D<0.5, output is lower input • Output voltage is always negative. • Note that output is never directly connected to load. • Energy is stored in inductor when switch is closed a ...
Fast Ignitron Trigger Circuit Using Insulated Gate Bipolar Transistors
... triggering is typically achieved with a capacitor discharge circuit; in the past, these circuits have often used krytrons [6]–[8] or thyristors/silicon-controlled rectifiers (SCRs) [9]–[11] as switches. However, SCRs are not fast enough for some plasma experiments, (turn-on times generally limited t ...
... triggering is typically achieved with a capacitor discharge circuit; in the past, these circuits have often used krytrons [6]–[8] or thyristors/silicon-controlled rectifiers (SCRs) [9]–[11] as switches. However, SCRs are not fast enough for some plasma experiments, (turn-on times generally limited t ...
Logic Families - Dr Ali El-Mousa
... A circuit configuration or approach used to produce a type of digital integrated circuit. Consequence: different logic functions, when fabricated in the form of an IC with the same approach, or in other words belonging to the same logic family, will have identical electrical characteristics. the ...
... A circuit configuration or approach used to produce a type of digital integrated circuit. Consequence: different logic functions, when fabricated in the form of an IC with the same approach, or in other words belonging to the same logic family, will have identical electrical characteristics. the ...
Power-Gating Single-Rail MOS Current
... systems, both low-power and high-speed designs have become increasingly common and important. Because not all function blocks or modules in a system are in active mode, the leakage dissipations of conventional CMOS circuits in sleep mode can effectively reduce by introducing multithreshold CMOS (MTC ...
... systems, both low-power and high-speed designs have become increasingly common and important. Because not all function blocks or modules in a system are in active mode, the leakage dissipations of conventional CMOS circuits in sleep mode can effectively reduce by introducing multithreshold CMOS (MTC ...
AN703 Designing DC/DC Converters with the Si9110 Switchmode
... transistor can be integrated with a CMOS PWM controller to serve as a pre-regulator stage. This reduces the number of external components by permitting the power controller IC to interface directly to the power bus. The second advantage of MOS is speed. Bipolar PWM controllers can be made fast, but ...
... transistor can be integrated with a CMOS PWM controller to serve as a pre-regulator stage. This reduces the number of external components by permitting the power controller IC to interface directly to the power bus. The second advantage of MOS is speed. Bipolar PWM controllers can be made fast, but ...
FSB50450AT Motion SPM 5 Series ®
... 1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM® 5 product. VPN should be sufficiently less than this value considering the effect of the stray inductance so that VPN should not exceed BVDSS in any case. 2. tON and tOFF include the p ...
... 1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each MOSFET inside Motion SPM® 5 product. VPN should be sufficiently less than this value considering the effect of the stray inductance so that VPN should not exceed BVDSS in any case. 2. tON and tOFF include the p ...
5-Components1-24 June 2014.cwk (DR).
... A Capacitor stores Electrical Charge. In its simplest form it is made of two parallel metal plates ( Conductors ) separated by an insulating material called the Dielectric. NOTE: A Dielectric is an insulating medium which has the capacity of sustaining an Electric Field. ...
... A Capacitor stores Electrical Charge. In its simplest form it is made of two parallel metal plates ( Conductors ) separated by an insulating material called the Dielectric. NOTE: A Dielectric is an insulating medium which has the capacity of sustaining an Electric Field. ...
ZXLD1320 Buck mode DC-DC converter for LED driving with Description
... The device can be shut down by shorting the ADJ pin to ground, or pulling it to a voltage below 28mV with a suitable open collector NPN or open drain NMOS transistor. In the shutdown state, most of the circuitry inside the device is switched off and residual quiescent current will be typically 12µA. ...
... The device can be shut down by shorting the ADJ pin to ground, or pulling it to a voltage below 28mV with a suitable open collector NPN or open drain NMOS transistor. In the shutdown state, most of the circuitry inside the device is switched off and residual quiescent current will be typically 12µA. ...
this PDF file - European Scientific Journal
... applications is driving the pipelined ADC design towards higher speed, higher precision, lower power consumption, lower supply voltage, smaller size and higher levels of integration along with the advancement of the fabrication technology. While continual speed improvement can still be achieved by u ...
... applications is driving the pipelined ADC design towards higher speed, higher precision, lower power consumption, lower supply voltage, smaller size and higher levels of integration along with the advancement of the fabrication technology. While continual speed improvement can still be achieved by u ...
OKANAGAN COLLEGE 1 Semiconductor Theory
... move across the p-material to be filled by electrons. There is therefore a flow of the majority carrier electrons in the n-material towards the junction, and a flow a majority carrier holes in the p-material also towards the junction resulting in a flow of current through the diode. Minority carrier ...
... move across the p-material to be filled by electrons. There is therefore a flow of the majority carrier electrons in the n-material towards the junction, and a flow a majority carrier holes in the p-material also towards the junction resulting in a flow of current through the diode. Minority carrier ...
Common-Source Amplifier Stage
... The discussion above of limits imposed on Vgs assumes that the transistor remains in the active mode. To clarify this point, reference is made to the output characteristics of Fig. 5.5. The graph has plots of the output characteristic for three values of v GS in addition to the load line. The charac ...
... The discussion above of limits imposed on Vgs assumes that the transistor remains in the active mode. To clarify this point, reference is made to the output characteristics of Fig. 5.5. The graph has plots of the output characteristic for three values of v GS in addition to the load line. The charac ...
RA01L9595M 数据资料DataSheet下载
... 2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality a ...
... 2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality a ...
Optical Receiver 80Mbit/s front-end
... Irradiation measurements on MOS capacitors performed in the early 80’s showed a significant decrease of the radiation induced oxide trapped charge and interface states for oxides thinner than about 10 nm [2]. Since gate oxides in present day submicron CMOS technologies are in this range, they are be ...
... Irradiation measurements on MOS capacitors performed in the early 80’s showed a significant decrease of the radiation induced oxide trapped charge and interface states for oxides thinner than about 10 nm [2]. Since gate oxides in present day submicron CMOS technologies are in this range, they are be ...
Datasheet - STMicroelectronics
... The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the state of the output, so there is no load charge on the reference of input lines. ...
... The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the state of the output, so there is no load charge on the reference of input lines. ...
LED Drive Methods and Circuit Design
... shown by IF1, IF2 and IF3. In this situation, it is possible for a current that exceeds the maximum rating to flow, and still greater differences in the individual currents can occur depending on the temperature characteristics. Such variations in the current not only lower the lighting quality, the ...
... shown by IF1, IF2 and IF3. In this situation, it is possible for a current that exceeds the maximum rating to flow, and still greater differences in the individual currents can occur depending on the temperature characteristics. Such variations in the current not only lower the lighting quality, the ...
Application Note AN4129 Green Current Mode PWM Controller FAN7601 1. Introduction www.fairchildsemi.com
... The maximum average current of the output diode is the same as the maximum load current. In this case, 4.167A is the maximum load current. For better efficiency, two 100V, 20A schottky diodes are used. The diode is reverse biased when MOSFET is turned on. The reverse voltage depends on the MOSFET sw ...
... The maximum average current of the output diode is the same as the maximum load current. In this case, 4.167A is the maximum load current. For better efficiency, two 100V, 20A schottky diodes are used. The diode is reverse biased when MOSFET is turned on. The reverse voltage depends on the MOSFET sw ...
Application Note Multifunctional 2-Channel Amplifier Board
... ranging from a microampere down to some picoampere cannot be measured by commonly available multimeters – an amplifier is needed. We provide a small multifunctional amplifier board for developers to simplify and support application development. For ordering this board please visit http://www.twlux.d ...
... ranging from a microampere down to some picoampere cannot be measured by commonly available multimeters – an amplifier is needed. We provide a small multifunctional amplifier board for developers to simplify and support application development. For ordering this board please visit http://www.twlux.d ...
Dummy-Gate Structure to Improve Turn
... For deep submicron complementary metal-oxide semiconductors (CMOS) technologies, the gate oxide thickness has been scaled down to increase circuit operating speed, however, its time-to-breakdown, tBD , or charge-to-breakdown, QBD , will also decrease. The ultra-thin gate oxide can not sustain the ov ...
... For deep submicron complementary metal-oxide semiconductors (CMOS) technologies, the gate oxide thickness has been scaled down to increase circuit operating speed, however, its time-to-breakdown, tBD , or charge-to-breakdown, QBD , will also decrease. The ultra-thin gate oxide can not sustain the ov ...
pnm-31 voltage relay
... CAUTION device should be connected according to the details included in this operating manual. Installation, connection and control should be carried out by a qualified electrician staff, who act in accordance with the service manual and the device functions. Disassembling of the device is equal wit ...
... CAUTION device should be connected according to the details included in this operating manual. Installation, connection and control should be carried out by a qualified electrician staff, who act in accordance with the service manual and the device functions. Disassembling of the device is equal wit ...
Current Sense Circuit Collection
... This is the basic LT6100 circuit configuration. The internal circuitry, including an output buffer, typically operates from a low voltage supply, such as the 3V shown. The monitored supply can range anywhere from VCC + 1.4V up to 48V. The A2 and A4 pins can be strapped various ways to provide a wide ...
... This is the basic LT6100 circuit configuration. The internal circuitry, including an output buffer, typically operates from a low voltage supply, such as the 3V shown. The monitored supply can range anywhere from VCC + 1.4V up to 48V. The A2 and A4 pins can be strapped various ways to provide a wide ...
MAX9610 1µA, µDFN/SC70, Lithium-Ion Battery, Precision Current-Sense Amplifier General Description
... The MAX9610 family of unidirectional high-side, current-sense amplifiers features a 1.6V to 5.5V input common-mode range. The input range is excellent for monitoring the current of a single-cell lithium-ion battery (Li+), which at full charge is 4.2V, typically 3.6V in normal use, and less than 2.9V ...
... The MAX9610 family of unidirectional high-side, current-sense amplifiers features a 1.6V to 5.5V input common-mode range. The input range is excellent for monitoring the current of a single-cell lithium-ion battery (Li+), which at full charge is 4.2V, typically 3.6V in normal use, and less than 2.9V ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.