Understanding IDRIVE and TDRIVE in TI Motor Gate Drivers (Rev. A)
... The metal-oxide-semiconductor field-effect transistor, or MOSFET, is the most common transistor used in present-day electronic-circuit design. The MOSFET has many properties that make it useful in a variety of applications. These properties include scalability, low turnon current, high switching spe ...
... The metal-oxide-semiconductor field-effect transistor, or MOSFET, is the most common transistor used in present-day electronic-circuit design. The MOSFET has many properties that make it useful in a variety of applications. These properties include scalability, low turnon current, high switching spe ...
BC847 series 1. Product profile 45 V, 100 mA NPN general-purpose transistors
... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the p ...
... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the p ...
Integrated Charger, Dual Main Step-Down Controllers, and Dual LDO Regulators MAX17085B General Description
... The charger uses n-channel switching MOSFETs. Adjustable charge current, charge voltage, and cell selection allow for flexible use with different battery packs. Charge current is set by an analog control input, or a PWM input. High-accuracy current-sense amplifiers provide fast cycle-by-cycle curr ...
... The charger uses n-channel switching MOSFETs. Adjustable charge current, charge voltage, and cell selection allow for flexible use with different battery packs. Charge current is set by an analog control input, or a PWM input. High-accuracy current-sense amplifiers provide fast cycle-by-cycle curr ...
50 555 Circuits - Talking Electronics
... resistor and capacitor. When a capacitor is connected to a voltage, it takes a period of time to charge. If a resistor is placed in series with the capacitor, the timing will increase. The chip detects the rising and falling voltage on the capacitor. When the voltage on the capacitor is 2/3 of the ...
... resistor and capacitor. When a capacitor is connected to a voltage, it takes a period of time to charge. If a resistor is placed in series with the capacitor, the timing will increase. The chip detects the rising and falling voltage on the capacitor. When the voltage on the capacitor is 2/3 of the ...
ZLDO1117
... The device will require an output capacitor of 22µF tantalum or 150µF aluminum electrolytic when the adjust pin is bypassed. Normally, capacitor values on the order of 100µF are used in the output of many regulators to ensure good load transient response with large load current changes. Output capac ...
... The device will require an output capacitor of 22µF tantalum or 150µF aluminum electrolytic when the adjust pin is bypassed. Normally, capacitor values on the order of 100µF are used in the output of many regulators to ensure good load transient response with large load current changes. Output capac ...
MAX8759 Low-Cost, SMBus, CCFL Backlight Controller General Description Features
... operates over a wide input-voltage range of 4.5V to 28V with high power to light efficiency. The device also includes safety features that effectively protect against single-point fault conditions such as lamp-out, secondary overvoltage, and secondary short-circuit faults. The MAX8759 provides accur ...
... operates over a wide input-voltage range of 4.5V to 28V with high power to light efficiency. The device also includes safety features that effectively protect against single-point fault conditions such as lamp-out, secondary overvoltage, and secondary short-circuit faults. The MAX8759 provides accur ...
Lightning Protection for Power Systems: A Primer
... relationship between voltage and current. When the voltage across the component to be protected is relatively low, the surge arrestor has a high impedance and therefore does not allow much current to flow through it. This keeps power consumption low under normal operating conditions. When a voltage ...
... relationship between voltage and current. When the voltage across the component to be protected is relatively low, the surge arrestor has a high impedance and therefore does not allow much current to flow through it. This keeps power consumption low under normal operating conditions. When a voltage ...
BD9E102FJ
... intended for shutting down the IC from thermal runaway in an abnormal state with the temperature exceeding Tjmax = 150C. It is not meant to protect or guarantee the soundness of the application. Do not use the function of this circuit for application protection design. 3-4) Over Current Protection ...
... intended for shutting down the IC from thermal runaway in an abnormal state with the temperature exceeding Tjmax = 150C. It is not meant to protect or guarantee the soundness of the application. Do not use the function of this circuit for application protection design. 3-4) Over Current Protection ...
SD12 Features Mechanical Data
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
ZXLD1366 Description Pin Assignments
... condition, the (-) input to the comparator is at ground and its output is high. This turns MN on and switches the LX pin low, causing current to flow from VIN to ground, via RS, L1 and the LED(s). The current rises at a rate determined by VIN and L1 to produce a voltage ramp (VSENSE) across RS. The ...
... condition, the (-) input to the comparator is at ground and its output is high. This turns MN on and switches the LX pin low, causing current to flow from VIN to ground, via RS, L1 and the LED(s). The current rises at a rate determined by VIN and L1 to produce a voltage ramp (VSENSE) across RS. The ...
4 Surge Mitigation Functions
... This form of surge mitigation operates by limiting (clipping) surge amplitudes that exceed a predetermined threshold value to values either close to that of the threshold or much lower than the threshold. Surge mitigation controlled by an integrated circuit (IC) and a power element can be multimode. ...
... This form of surge mitigation operates by limiting (clipping) surge amplitudes that exceed a predetermined threshold value to values either close to that of the threshold or much lower than the threshold. Surge mitigation controlled by an integrated circuit (IC) and a power element can be multimode. ...
LT1805 - Single/Dual/Quad 100V/µs, 85MHz, Rail-to-Rail Input and Output Op Amps
... input offset voltage, lower input bias current and higher DC gain than other devices with comparable bandwidth and slew rate. Typically, the LT1803/LT1804/LT1805 have an input offset voltage of 350µV, an input bias current of 125nA and an open-loop gain of 60V/mV. The LT1803/LT1804/LT1805 have an in ...
... input offset voltage, lower input bias current and higher DC gain than other devices with comparable bandwidth and slew rate. Typically, the LT1803/LT1804/LT1805 have an input offset voltage of 350µV, an input bias current of 125nA and an open-loop gain of 60V/mV. The LT1803/LT1804/LT1805 have an in ...
Post-Dennard Scaling and the final Years of Moore`s Law
... Intel optimized the switching However, even these remarkable breakthroughs could not revive thep will lead to rising percentages of dark or dim silicon intransistors (Moore´s the frequency increased byprocessors 40 % [5] and will als that ...
... Intel optimized the switching However, even these remarkable breakthroughs could not revive thep will lead to rising percentages of dark or dim silicon intransistors (Moore´s the frequency increased byprocessors 40 % [5] and will als that ...
FMMT591A Features Mechanical Data
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
© U n
... To read the state of the cell, the bit lines BL and BL' are precharged typically to close to VDD, and the word line WL is activated. This turns on the access transistors, and according to the state stored in the cell, one of the bit lines will be discharged. The differential voltage or the differen ...
... To read the state of the cell, the bit lines BL and BL' are precharged typically to close to VDD, and the word line WL is activated. This turns on the access transistors, and according to the state stored in the cell, one of the bit lines will be discharged. The differential voltage or the differen ...
09210021, 09210019, 11310015
... We have already said that in India most of the electrical/electronic devices work in the 220V AC supply provide be the electricity department. Internally the circuit in most of the electronic equipment works on DC supply. ...
... We have already said that in India most of the electrical/electronic devices work in the 220V AC supply provide be the electricity department. Internally the circuit in most of the electronic equipment works on DC supply. ...
Bridging the Efficiency Gap in PoE Powered
... Cost-Benefit Analysis of using FET FWB The decision to use a FET FWB over the standard diode FWB would normally be based on a cost-benefit analysis of the particular PD application. The graph in Figure 6 uses a minimum efficiency gain of 2% as a practical criteria for indicating when the benefits pr ...
... Cost-Benefit Analysis of using FET FWB The decision to use a FET FWB over the standard diode FWB would normally be based on a cost-benefit analysis of the particular PD application. The graph in Figure 6 uses a minimum efficiency gain of 2% as a practical criteria for indicating when the benefits pr ...
Fundamentals of PolySwitch Overcurrent and
... in resistance occurs for a very small change in temperature (see " The Physics of Polymeric PTC," which follows). In Figure 2, this region of large change in resistance for a small change in temperature occurs between points 3 and 4, and is the normal operating region for a device in the tripped sta ...
... in resistance occurs for a very small change in temperature (see " The Physics of Polymeric PTC," which follows). In Figure 2, this region of large change in resistance for a small change in temperature occurs between points 3 and 4, and is the normal operating region for a device in the tripped sta ...
TLC274, TLC274A, TLC274B, TLC274Y, TLC279 LinCMOS
... These devices use Texas Instruments silicon-gate LinCMOS technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes. The extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices ide ...
... These devices use Texas Instruments silicon-gate LinCMOS technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes. The extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices ide ...
Infineon Application Note Reverse Conduction IGBT for Induction
... two major principles, which are the fieldstop layer and the trench gate structure. This structure combination leads to a widely improved saturation voltage and very low turn-off energies. Compared to previous generations based on the NPT-cell design thinner wafer substrates can be used to increase t ...
... two major principles, which are the fieldstop layer and the trench gate structure. This structure combination leads to a widely improved saturation voltage and very low turn-off energies. Compared to previous generations based on the NPT-cell design thinner wafer substrates can be used to increase t ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.