BD9106FVM-LB
... voltage circuit, internal oscillator and drivers are turned to OFF. Circuit current during standby is 0 μA (Typ). ...
... voltage circuit, internal oscillator and drivers are turned to OFF. Circuit current during standby is 0 μA (Typ). ...
ZXTC4591AMC Features Mechanical Data
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
1N5820 - Vishay
... typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in ...
... typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in ...
Dynamic Fine-Grain Leakage Reduction Using Leakage
... energy to switch between active and inactive states. By sizing the sleep transistor [13], boosting the gate voltage for the sleep transistor [11], or forward-biasing the sleep transistor [16], the delay penalty can be reduced in exchange for greater sleep leakage currents and increased deactivation ...
... energy to switch between active and inactive states. By sizing the sleep transistor [13], boosting the gate voltage for the sleep transistor [11], or forward-biasing the sleep transistor [16], the delay penalty can be reduced in exchange for greater sleep leakage currents and increased deactivation ...
Super Barrier Rectifier—A New Generation of Power Diode
... strate that real SBR diodes can readily compete with Schottky for a number of practical applications. II. SBR STRUCTURE AND OPERATION PRINCIPLES The SBR diode overcomes the aforementioned issues with Schottky and p-n diodes by using the MOS structure as illus trated in Fig. 1. The most important pa ...
... strate that real SBR diodes can readily compete with Schottky for a number of practical applications. II. SBR STRUCTURE AND OPERATION PRINCIPLES The SBR diode overcomes the aforementioned issues with Schottky and p-n diodes by using the MOS structure as illus trated in Fig. 1. The most important pa ...
ZXMP10A13F Product Summary Features
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
REF01,02,03 - Analog Devices
... With an external buffer and a simple resistor network, the TEMP terminal can be used for temperature sensing and approximation. A TRIM terminal is also provided on the device for fine adjustment of the output voltage. The small footprint, wide supply range, and application versatility make the REF01 ...
... With an external buffer and a simple resistor network, the TEMP terminal can be used for temperature sensing and approximation. A TRIM terminal is also provided on the device for fine adjustment of the output voltage. The small footprint, wide supply range, and application versatility make the REF01 ...
TL087, TL088, TL287, TL288 JFET-INPUT OPERATIONAL AMPLIFIERS D
... At the picoamp bias current level typical of these JFET operational amplifiers, accurate measurement of the bias current becomes difficult. Not only does this measurement require a picoammeter, but test socket leakages can easily exceed the actual device bias currents. To accurately measure these sm ...
... At the picoamp bias current level typical of these JFET operational amplifiers, accurate measurement of the bias current becomes difficult. Not only does this measurement require a picoammeter, but test socket leakages can easily exceed the actual device bias currents. To accurately measure these sm ...
bipolar plates and current collectors
... Three pilot hydrogen station of this type were built in Japan, two of three stations were lost by ...
... Three pilot hydrogen station of this type were built in Japan, two of three stations were lost by ...
MCW 0406 AT - Precision Precision Wide Terminal Thin
... The power dissipation on the resistor generates a temperature rise against the local ambient, depending on the heat flow support of the printed-circuit board (thermal resistance). The rated dissipation applies only if the permitted film temperature is not exceeded. Furthermore, a high level of ambie ...
... The power dissipation on the resistor generates a temperature rise against the local ambient, depending on the heat flow support of the printed-circuit board (thermal resistance). The rated dissipation applies only if the permitted film temperature is not exceeded. Furthermore, a high level of ambie ...
LM3670 - Texas Instruments
... either a single Li-Ion or three-cell NiMH/NiCd battery to portable devices such as cell phones and PDAs. Using a voltage mode architecture with synchronous rectification, the LM3670 can deliver up to 350 mA depending on the input voltage and output voltage (voltage head room), and the inductor chose ...
... either a single Li-Ion or three-cell NiMH/NiCd battery to portable devices such as cell phones and PDAs. Using a voltage mode architecture with synchronous rectification, the LM3670 can deliver up to 350 mA depending on the input voltage and output voltage (voltage head room), and the inductor chose ...
Practical Temperature Measurements*
... Common Temperature Transducers.................................................................................... Z-19 Introduction............................................................................................................................ Z-20 Reference Temperatures................ ...
... Common Temperature Transducers.................................................................................... Z-19 Introduction............................................................................................................................ Z-20 Reference Temperatures................ ...
MAX6691 Four-Channel Thermistor Temperature-to-Pulse- Width Converter General Description
... equal to 1mW/°C. For every milliwatt the thermistor dissipates, its temperature rises by 1°C. For example, consider a 10kΩ (at +25°C) NTC thermistor in series with a 5110Ω resistor operating +40°C with a constant 5V bias. If it is one of the standard thermistors previously mentioned, its resistance ...
... equal to 1mW/°C. For every milliwatt the thermistor dissipates, its temperature rises by 1°C. For example, consider a 10kΩ (at +25°C) NTC thermistor in series with a 5110Ω resistor operating +40°C with a constant 5V bias. If it is one of the standard thermistors previously mentioned, its resistance ...
Thermal runaway
Thermal runaway refers to a situation where an increase in temperature changes the conditions in a way that causes a further increase in temperature, often leading to a destructive result. It is a kind of uncontrolled positive feedback.In other words, ""thermal runaway"" describes a process which is accelerated by increased temperature, in turn releasing energy that further increases temperature. In chemistry (and chemical engineering), this risk is associated with strongly exothermic reactions that are accelerated by temperature rise. In electrical engineering, thermal runaway is typically associated with increased current flow and power dissipation, although exothermic chemical reactions can be of concern here too. Thermal runaway can occur in civil engineering, notably when the heat released by large amounts of curing concrete is not controlled. In astrophysics, runaway nuclear fusion reactions in stars can lead to nova and several types of supernova explosions, and also occur as a less dramatic event in the normal evolution of solar mass stars, the ""helium flash"".There are also concerns regarding global warming that a global average increase of 3-4 degrees Celsius above the preindustrial baseline could lead to a further unchecked increase in surface temperatures. For example, releases of methane, a greenhouse gas more potent than CO2, from wetlands, melting permafrost and continental margin seabed clathrate deposits could be subject to positive feedback.