Dual Channel Temperature Sensor and Over Temperature Alarm
... which varies from device to device. The technique used in the ADT7482 is to measure the change in VBE when the device is operated at three different currents. Previous devices have used only two operating currents. The use of a third current allows automatic cancellation of resistances in series wit ...
... which varies from device to device. The technique used in the ADT7482 is to measure the change in VBE when the device is operated at three different currents. Previous devices have used only two operating currents. The use of a third current allows automatic cancellation of resistances in series wit ...
Proper Coil Drive is Critical to Good Relay and
... • As a result, AC relays typically carry a lower rating than DC relays of the same family. This is because 1) the sinewave has low energy spots (as explained previously) and so AC relay contacts do not randomly break over the entire cycle in both polarities and 2) this can result in an excessively h ...
... • As a result, AC relays typically carry a lower rating than DC relays of the same family. This is because 1) the sinewave has low energy spots (as explained previously) and so AC relay contacts do not randomly break over the entire cycle in both polarities and 2) this can result in an excessively h ...
PAM2401 Description Pin Assignments
... current limiting. The device includes one 0.10Ω N-channel MOSFET switch and one 0.15Ω P-channel synchronous rectifier. This product has the ability to simply program the output voltage from 2.5V to ...
... current limiting. The device includes one 0.10Ω N-channel MOSFET switch and one 0.15Ω P-channel synchronous rectifier. This product has the ability to simply program the output voltage from 2.5V to ...
REVIEW Silicon carbide and diamond for high temperature device
... diamond make these materials an ideal choice for device fabrication for applications in many different areas, e.g. light emitters, high temperature and high power electronics, high power microwave devices, micro-electromechanical system (MEMS) technology, and substrates. These semiconductors have be ...
... diamond make these materials an ideal choice for device fabrication for applications in many different areas, e.g. light emitters, high temperature and high power electronics, high power microwave devices, micro-electromechanical system (MEMS) technology, and substrates. These semiconductors have be ...
NCP1256 - Low Power Offline PWM Current
... watts. Housed in a tiny TSOP−6 package, the part can be supplied up to 30 V. It hosts a jittered 65 or 100−kHz switching circuitry operated in peak current mode control. When the power in the secondary side starts decreasing, the controller automatically folds back its switching frequency down to a ...
... watts. Housed in a tiny TSOP−6 package, the part can be supplied up to 30 V. It hosts a jittered 65 or 100−kHz switching circuitry operated in peak current mode control. When the power in the secondary side starts decreasing, the controller automatically folds back its switching frequency down to a ...
PAM2301 Description Pin Assignments
... 3. Does the (+) plate of CIN connect to VIN as closely as possible? This capacitor provides the AC current to the internal power MOSFETs. 4. Keep the switching node, SW, away from the sensitive VFB node. 5. Keep the (–) plates of CIN and COUT as close as possible. ...
... 3. Does the (+) plate of CIN connect to VIN as closely as possible? This capacitor provides the AC current to the internal power MOSFETs. 4. Keep the switching node, SW, away from the sensitive VFB node. 5. Keep the (–) plates of CIN and COUT as close as possible. ...
FMMT718 Features Mechanical Data
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
FMMT720 Features Mechanical Data
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
AP1695 Description Features
... AP1695 has two kinds of over temperature protection processes. First, the system is operating normally, the ambient temperature is changed to +170°C suddenly, the IC will trigger over temperature protection which leads to a latch work mode. Second, if the system starts when the ambient temperature i ...
... AP1695 has two kinds of over temperature protection processes. First, the system is operating normally, the ambient temperature is changed to +170°C suddenly, the IC will trigger over temperature protection which leads to a latch work mode. Second, if the system starts when the ambient temperature i ...
BD8964FVM
... Consideration on Permissible Dissipation and Heat Generation Since this IC functions with high efficiency without significant heat generation in most applications, no special consideration is needed on permissible dissipation or heat generation. In case of extreme conditions, however, including lowe ...
... Consideration on Permissible Dissipation and Heat Generation Since this IC functions with high efficiency without significant heat generation in most applications, no special consideration is needed on permissible dissipation or heat generation. In case of extreme conditions, however, including lowe ...
MAX14838/9 - Maxim Part Number Search
... the absolute maximum rating of the VCC pin occur during ESD, burst, and hot plug events. The MAX14838/ MAX14839 cannot be damaged with a 100nF bypass capacitor on the VCC line. Transients due to inductive kickback on DO when driving inductive loads up to 1.5H at 100mA or less can also bring the DO v ...
... the absolute maximum rating of the VCC pin occur during ESD, burst, and hot plug events. The MAX14838/ MAX14839 cannot be damaged with a 100nF bypass capacitor on the VCC line. Transients due to inductive kickback on DO when driving inductive loads up to 1.5H at 100mA or less can also bring the DO v ...
ER34881886
... output which affect the performance of DAC. In binary weighted DACs due to the large ratio between the LSB and the MSB, it is difficult to synchronize the switching. The output can change by substantially more than 1LSB, which gives rise to a glitch. To improve the performance of DAC, a decoder for ...
... output which affect the performance of DAC. In binary weighted DACs due to the large ratio between the LSB and the MSB, it is difficult to synchronize the switching. The output can change by substantially more than 1LSB, which gives rise to a glitch. To improve the performance of DAC, a decoder for ...
FEATURES DESCRIPTION
... these last three bits. This byte is called the Hs master code. (Note that this is different from normal address bytes—the low bit does not indicate read/write status.) The BUF08800 does not acknowledge this byte; the communication protocol prohibits acknowledgment of the Hs master code. On receiving ...
... these last three bits. This byte is called the Hs master code. (Note that this is different from normal address bytes—the low bit does not indicate read/write status.) The BUF08800 does not acknowledge this byte; the communication protocol prohibits acknowledgment of the Hs master code. On receiving ...
HGTG30N60A4 600V SMPS IGBT Features
... is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20. 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and e ...
... is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20. 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and e ...
FDDS10H04A_F085A Smart High Side Switch F DDS10H04A_F085A Sm
... RI=2, RL=1, td=400ms, IN=Low o rHigh Load current (Short-circuit current) ...
... RI=2, RL=1, td=400ms, IN=Low o rHigh Load current (Short-circuit current) ...
min i mum drop out volt age on a se rial pnp tran sis tor
... The main examined value in an experiment performed on moderately loaded voltage regulators was the serial pnp transistor’s minimum dropout voltage, followed by the data on the base current and forward emitter current gain. Minimum dropout voltage decreased by up to 12%, while the measured values of ...
... The main examined value in an experiment performed on moderately loaded voltage regulators was the serial pnp transistor’s minimum dropout voltage, followed by the data on the base current and forward emitter current gain. Minimum dropout voltage decreased by up to 12%, while the measured values of ...
Thermal runaway
Thermal runaway refers to a situation where an increase in temperature changes the conditions in a way that causes a further increase in temperature, often leading to a destructive result. It is a kind of uncontrolled positive feedback.In other words, ""thermal runaway"" describes a process which is accelerated by increased temperature, in turn releasing energy that further increases temperature. In chemistry (and chemical engineering), this risk is associated with strongly exothermic reactions that are accelerated by temperature rise. In electrical engineering, thermal runaway is typically associated with increased current flow and power dissipation, although exothermic chemical reactions can be of concern here too. Thermal runaway can occur in civil engineering, notably when the heat released by large amounts of curing concrete is not controlled. In astrophysics, runaway nuclear fusion reactions in stars can lead to nova and several types of supernova explosions, and also occur as a less dramatic event in the normal evolution of solar mass stars, the ""helium flash"".There are also concerns regarding global warming that a global average increase of 3-4 degrees Celsius above the preindustrial baseline could lead to a further unchecked increase in surface temperatures. For example, releases of methane, a greenhouse gas more potent than CO2, from wetlands, melting permafrost and continental margin seabed clathrate deposits could be subject to positive feedback.