piezotechprimer.pdf
... ferroelectric domains align to the induced field resulting in a net piezoelectric effect. It should be noted that not all the domains become exactly aligned. Some of the domains only partially align and some do not align at all. The number of domains that align depends upon the poling voltage, tempe ...
... ferroelectric domains align to the induced field resulting in a net piezoelectric effect. It should be noted that not all the domains become exactly aligned. Some of the domains only partially align and some do not align at all. The number of domains that align depends upon the poling voltage, tempe ...
Effect of disorder on quantum phase transitions in
... are random. A similar model was also recently studied numerically using the density-matrix renormalization group.32 A Jordan-Wigner transformation is then used to map the model onto a noninteracting fermion model. Section III contains a brief summary of the known properties of the disorder-free mode ...
... are random. A similar model was also recently studied numerically using the density-matrix renormalization group.32 A Jordan-Wigner transformation is then used to map the model onto a noninteracting fermion model. Section III contains a brief summary of the known properties of the disorder-free mode ...
1 Introduction to quantum mechanics
... convenient to work in Hz (that is, revolutions per second) rather than rad⋅s–1; the frequency in Hz, ν, is related to ω by ω = 2 πν. The position of the point can now be expressed as r exp(iωt), an expression which occurs very frequently in the mathematical description of NMR. Recalling that exp(iθ) ...
... convenient to work in Hz (that is, revolutions per second) rather than rad⋅s–1; the frequency in Hz, ν, is related to ω by ω = 2 πν. The position of the point can now be expressed as r exp(iωt), an expression which occurs very frequently in the mathematical description of NMR. Recalling that exp(iθ) ...
Line junctions in the quantum Hall effect - Penn Physics
... attractive interaction, a disorder-driven metal-insulator transition was predicted. This metal-insulator transition should be directly observable in such a fractional quantum Hall effect line contact. In this paper we describe in detail the experimental signature of a 1D metal-insulator transition f ...
... attractive interaction, a disorder-driven metal-insulator transition was predicted. This metal-insulator transition should be directly observable in such a fractional quantum Hall effect line contact. In this paper we describe in detail the experimental signature of a 1D metal-insulator transition f ...
Trapping beam
... Assumption : two-level atom, in a laserfield of frequency wL, with a red detuning : d = wL - w0 < 0. laser-induced non-dissipative force associated with a potential ...
... Assumption : two-level atom, in a laserfield of frequency wL, with a red detuning : d = wL - w0 < 0. laser-induced non-dissipative force associated with a potential ...
Fluctuation-Induced Forces Between Atoms and
... the electromagnetic field [29, 30]. As a result, when two atoms are brought nearby, they interact through their fluctuations mediated by the electromagnetic field. Similarly when a particle is in proximity of a macroscopic object, electric currents fluctuating inside the object and the fluctuations ...
... the electromagnetic field [29, 30]. As a result, when two atoms are brought nearby, they interact through their fluctuations mediated by the electromagnetic field. Similarly when a particle is in proximity of a macroscopic object, electric currents fluctuating inside the object and the fluctuations ...
Electron spectroscopy of atoms and molecules using synchrotron
... The solutions identifying a state of a bound electron in the atom can be fully described using four quantum numbers: the principal quantum number n, the angular momentum quantum number l, the magnetic quantum number ml and the spin quantum number s. The possible values of the quantum numbers and the ...
... The solutions identifying a state of a bound electron in the atom can be fully described using four quantum numbers: the principal quantum number n, the angular momentum quantum number l, the magnetic quantum number ml and the spin quantum number s. The possible values of the quantum numbers and the ...
Spin-dependent Transport of Interacting Electrons in Mesoscopic
... The basis for many nanosystems are semiconductor heterostructures which are produced by epitaxial growth of layers of different semiconductor materials such as GaAs and AlGaAs [4]. With present techniques atomically sharp interfaces between the different materials can be achieved. Because of the dif ...
... The basis for many nanosystems are semiconductor heterostructures which are produced by epitaxial growth of layers of different semiconductor materials such as GaAs and AlGaAs [4]. With present techniques atomically sharp interfaces between the different materials can be achieved. Because of the dif ...
III. Contact-ing Schrödinger
... r . This quantity, when summed over many electrons, can be interpreted as the average electron density. 18.2. Electron-electron interactions and the scf method After the initial success of the Schrödinger equation in “explaining” the experimentally observed energy levels of the hydrogen atom, scient ...
... r . This quantity, when summed over many electrons, can be interpreted as the average electron density. 18.2. Electron-electron interactions and the scf method After the initial success of the Schrödinger equation in “explaining” the experimentally observed energy levels of the hydrogen atom, scient ...
Time-Reversal-Symmetry-Broken Quantum Spin Hall Effect
... almost fully spin-up polarized and state B spin-down polarized. Therefore, in the C ¼ 1 region there exist two counterpropagating edge states with opposite spin polarizations on a sample edge, which give rise to no net charge transfer but contribute to a net transport of spin. The characteristic o ...
... almost fully spin-up polarized and state B spin-down polarized. Therefore, in the C ¼ 1 region there exist two counterpropagating edge states with opposite spin polarizations on a sample edge, which give rise to no net charge transfer but contribute to a net transport of spin. The characteristic o ...
Ferromagnetism
Not to be confused with Ferrimagnetism; for an overview see Magnetism.Ferromagnetism is the basic mechanism by which certain materials (such as iron) form permanent magnets, or are attracted to magnets. In physics, several different types of magnetism are distinguished. Ferromagnetism (including ferrimagnetism) is the strongest type: it is the only one that typically creates forces strong enough to be felt, and is responsible for the common phenomena of magnetism in magnets encountered in everyday life. Substances respond weakly to magnetic fields with three other types of magnetism, paramagnetism, diamagnetism, and antiferromagnetism, but the forces are usually so weak that they can only be detected by sensitive instruments in a laboratory. An everyday example of ferromagnetism is a refrigerator magnet used to hold notes on a refrigerator door. The attraction between a magnet and ferromagnetic material is ""the quality of magnetism first apparent to the ancient world, and to us today"".Permanent magnets (materials that can be magnetized by an external magnetic field and remain magnetized after the external field is removed) are either ferromagnetic or ferrimagnetic, as are other materials that are noticeably attracted to them. Only a few substances are ferromagnetic. The common ones are iron, nickel, cobalt and most of their alloys, some compounds of rare earth metals, and a few naturally-occurring minerals such as lodestone.Ferromagnetism is very important in industry and modern technology, and is the basis for many electrical and electromechanical devices such as electromagnets, electric motors, generators, transformers, and magnetic storage such as tape recorders, and hard disks.