3.3 V Hex inverter
... 1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated condition ...
... 1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated condition ...
BD9D320EFJ
... The protective circuits are intended for prevention of damage caused by unexpected accidents. Do not use them for continuous protective operation. 2-1 Over Current Protection (OCP) Over current protection function is effective by controlling current which flows in low side MOSFET by 1 cycle each of ...
... The protective circuits are intended for prevention of damage caused by unexpected accidents. Do not use them for continuous protective operation. 2-1 Over Current Protection (OCP) Over current protection function is effective by controlling current which flows in low side MOSFET by 1 cycle each of ...
MAX1848 White LED Step-Up Converter in SOT23 General Description Features
... The MAX1848 is put into shutdown when VCTRL is less than 100mV. In shutdown, supply current is reduced to 0.3µA by powering down the entire IC except for the CTRL voltage detection circuitry. CCOMP is passively discharged during shutdown, allowing the device to reinitiate a soft-start whenever the d ...
... The MAX1848 is put into shutdown when VCTRL is less than 100mV. In shutdown, supply current is reduced to 0.3µA by powering down the entire IC except for the CTRL voltage detection circuitry. CCOMP is passively discharged during shutdown, allowing the device to reinitiate a soft-start whenever the d ...
Single-Shot Capture using the DSO-101 Oscilloscope
... the timebase. The input signal was applied to this oscillator in such a way as to pull the oscillation frequency into sync with the input signal. The pull-in range is quite limited, that is, the frequency of the multivibrator must be approximately equal to the frequency (or some integer multiple of ...
... the timebase. The input signal was applied to this oscillator in such a way as to pull the oscillation frequency into sync with the input signal. The pull-in range is quite limited, that is, the frequency of the multivibrator must be approximately equal to the frequency (or some integer multiple of ...
Abstract-This paper presents the analyzed, design and
... Low frequency ballast: is based on the fact that there isn’t resonance acoustic in frequency below 1kHz[6].The disadvantages of this method are the complicity of circuit and low efficiency. Tuned high-frequency ballast: require predetermination of the free acoustic resonance zone. However, it is ...
... Low frequency ballast: is based on the fact that there isn’t resonance acoustic in frequency below 1kHz[6].The disadvantages of this method are the complicity of circuit and low efficiency. Tuned high-frequency ballast: require predetermination of the free acoustic resonance zone. However, it is ...
Coordinated Control Strategy of TCSC and SVC for Damping Power
... Ybus will be changed into an unsymmetrical matrix. When the TCSC is used for time domain simulations, the modification of Ybus is required at each iteration. In accordance to change of TCSC reactance in the process of transient stability calculation, this method has the disadvantage that a constant ...
... Ybus will be changed into an unsymmetrical matrix. When the TCSC is used for time domain simulations, the modification of Ybus is required at each iteration. In accordance to change of TCSC reactance in the process of transient stability calculation, this method has the disadvantage that a constant ...
ADuM3100 数据手册DataSheet下载
... tPSK1 is the magnitude of the worst-case difference in tPHL and/or tPLH that is measured between units at the same operating temperature and output load within the recommended operating conditions. tPSK2 is the magnitude of the worst-case difference in tPHL and/or tPLH that is measured between units ...
... tPSK1 is the magnitude of the worst-case difference in tPHL and/or tPLH that is measured between units at the same operating temperature and output load within the recommended operating conditions. tPSK2 is the magnitude of the worst-case difference in tPHL and/or tPLH that is measured between units ...
Digitally Controlled Pulse Width Modulator for On
... can be tuned by controlling the transition time of the inverters within the ring oscillator. Header and footer circuits are widely used to control the current supplied to the pMOS and nMOS transistors within the ring oscillator inverter chain [8]. Although the header and footer circuits are typicall ...
... can be tuned by controlling the transition time of the inverters within the ring oscillator. Header and footer circuits are widely used to control the current supplied to the pMOS and nMOS transistors within the ring oscillator inverter chain [8]. Although the header and footer circuits are typicall ...
A 6-bit, 500-MS/s current-steering DAC in SiGe BiCMOS technology
... MOS devices alone [3], [5] and [6]. Bipolar and CMOS (BiCMOS) technology offers highspeed and high-gain heterojunction bipolar transistors (HBT) that, when combined with MOS devices, are able to improve on the linearity of the current-steering DAC and hence, improve the SFDR. ...
... MOS devices alone [3], [5] and [6]. Bipolar and CMOS (BiCMOS) technology offers highspeed and high-gain heterojunction bipolar transistors (HBT) that, when combined with MOS devices, are able to improve on the linearity of the current-steering DAC and hence, improve the SFDR. ...
TPS797xx - Texas Instruments
... The PG pin for the fixed voltage option devices is an open drain, active-high output that indicates the status of VO (output of the LDO). When VO exceeds approximately 90% of the regulated voltage, PG goes to a high-impedance state. PG goes to a low-impedance state when VO falls below approximately ...
... The PG pin for the fixed voltage option devices is an open drain, active-high output that indicates the status of VO (output of the LDO). When VO exceeds approximately 90% of the regulated voltage, PG goes to a high-impedance state. PG goes to a low-impedance state when VO falls below approximately ...
MAX1857 500mA, Low-Dropout, Ripple-Rejecting LDO in µMAX General Description
... pass transistor. Unlike similar designs using PNP pass transistors, P-channel MOSFETs require no base drive, which reduces quiescent current. PNP-based regulators also waste considerable current in dropout when the pass transistor saturates, and use high base-drive currents under large loads. The MA ...
... pass transistor. Unlike similar designs using PNP pass transistors, P-channel MOSFETs require no base drive, which reduces quiescent current. PNP-based regulators also waste considerable current in dropout when the pass transistor saturates, and use high base-drive currents under large loads. The MA ...
Switch Mode Power Supplies For Electrostatic Precipitators
... delivers high frequency energization that is spark-regulated and otherwise controlled by means of digital signal processing (DSP). The advantage of three-phase power supply is to provide higher efficiencies (i.e., higher power factors), a balanced load, and reduced secondary voltage waveform ripple. ...
... delivers high frequency energization that is spark-regulated and otherwise controlled by means of digital signal processing (DSP). The advantage of three-phase power supply is to provide higher efficiencies (i.e., higher power factors), a balanced load, and reduced secondary voltage waveform ripple. ...
Design of Two Stage Ultra Low Power CMOS Operational
... power applications with reduced channel length devices is becoming increasingly exigent with the relentless trend toward reduced supply voltages. A large part of the success of the MOS transistor is due to the fact that it can be scaled to increasingly smaller dimensions, which results in higher per ...
... power applications with reduced channel length devices is becoming increasingly exigent with the relentless trend toward reduced supply voltages. A large part of the success of the MOS transistor is due to the fact that it can be scaled to increasingly smaller dimensions, which results in higher per ...
model ngn-3a - Optec, Inc.
... where N0 is the radiance normal to the diffuser's surface and q is the angle from a line normal to the plane of the diffuser to a point on the hemisphere. Because of the optical and mechanical limitations in the design of this type of nephelometer, a small amount of truncation near 0° and 180° is ne ...
... where N0 is the radiance normal to the diffuser's surface and q is the angle from a line normal to the plane of the diffuser to a point on the hemisphere. Because of the optical and mechanical limitations in the design of this type of nephelometer, a small amount of truncation near 0° and 180° is ne ...
Differential Amplifier
... such as an emitter follower is used to shift it down closer to ground Output Stage : Push-pull amplifier - Act as buffer to connect 2nd level and output differential amplifier not affected by load - Consists of a push-pull amplifier: which increases the swing of the output voltage and enhances the l ...
... such as an emitter follower is used to shift it down closer to ground Output Stage : Push-pull amplifier - Act as buffer to connect 2nd level and output differential amplifier not affected by load - Consists of a push-pull amplifier: which increases the swing of the output voltage and enhances the l ...
BD9161FVM-LB
... 1) PD(I R)=IOUT ×(RCOIL+RON) (RCOIL [Ω]：DC resistance of inductor, RON [Ω]：ON resistance of FET IOUT [A]：Output current.) 2)PD(Gate)=Cgs×f×V (Cgs[F]：Gate capacitance of FET, f[H]：Switching frequency, V[V]：Gate driving voltage of FET) ...
... 1) PD(I R)=IOUT ×(RCOIL+RON) (RCOIL [Ω]：DC resistance of inductor, RON [Ω]：ON resistance of FET IOUT [A]：Output current.) 2)PD(Gate)=Cgs×f×V (Cgs[F]：Gate capacitance of FET, f[H]：Switching frequency, V[V]：Gate driving voltage of FET) ...