ZXSC400EV7 User Guide Issue 1
... The ZXSC400EV7 uses the circuit below. The target application is a 3W white LED being driven from two NiCd/NiMH batteries for torches, but the device is also excellent for general high powered LED driving. Q1 and Q2 form a pseudo-Darlington pair, which provides enough current gain for switching curr ...
... The ZXSC400EV7 uses the circuit below. The target application is a 3W white LED being driven from two NiCd/NiMH batteries for torches, but the device is also excellent for general high powered LED driving. Q1 and Q2 form a pseudo-Darlington pair, which provides enough current gain for switching curr ...
Toxin Detection Circuit (Title Work in Progress)
... • What is a HAB? o Sudden increase of marine microorganism population • algae, bacteria • Why is it “harmful” o Hypoxic conditions (little oxygen) o Toxins • e.g. Microcystin LR produced by Microsystis Aerugenosa ...
... • What is a HAB? o Sudden increase of marine microorganism population • algae, bacteria • Why is it “harmful” o Hypoxic conditions (little oxygen) o Toxins • e.g. Microcystin LR produced by Microsystis Aerugenosa ...
1N4148-1 - Microsemi
... Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. Forward Voltage: The forward voltage the device will exhibit at a specified ...
... Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. Forward Voltage: The forward voltage the device will exhibit at a specified ...
Features Mechanical Data
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
B140WS Features Mechanical Data
... Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically n ...
... Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically n ...
abstract - Innovetech
... freewheeling diode are analyzed through experiments using different semiconductor devices. Further, the switching loss of the converter is modeled and calculated for four space vector modulation schemes. It is shown that when the switches include minority carrier devices, such as Si PiN diode, IGBT ...
... freewheeling diode are analyzed through experiments using different semiconductor devices. Further, the switching loss of the converter is modeled and calculated for four space vector modulation schemes. It is shown that when the switches include minority carrier devices, such as Si PiN diode, IGBT ...
UMZ16N
... No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Up ...
... No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Up ...
ChrisPriceposter - University of Birmingham
... • Current across the junction is directly proportional to the change in charge density from zero bias to forward bias conditions ...
... • Current across the junction is directly proportional to the change in charge density from zero bias to forward bias conditions ...
Introduction to Solid State Electronics_independent_study
... Note that in Fig. 3, the diodes A and C are forward-biased and the diodes B and D (with dotted circle around them) are reverse-biased during the positive half cycle. Therefore, the current from the AC source passes through the diode A, leaves the bridge at the terminal marked “+” and then passes thr ...
... Note that in Fig. 3, the diodes A and C are forward-biased and the diodes B and D (with dotted circle around them) are reverse-biased during the positive half cycle. Therefore, the current from the AC source passes through the diode A, leaves the bridge at the terminal marked “+” and then passes thr ...
ZLLS400 Product Summary Features and Benefits
... Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically n ...
... Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically n ...
IMT17 Features Mechanical Data
... Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically n ...
... Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically n ...
BC857BLP Features Mechanical Data
... Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically n ...
... Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically n ...
I-V PLOTS OF LIGHT EMITTING DIODES (LEDs)
... therefore is not visible. Incandescent lamps are inefficient light sources because only a small part of the electrical power they consume is converted into visible light. Light emitting diodes (LEDs) which are made out of semiconductor materials such as gallium arsenide (GaAs )are much more efficien ...
... therefore is not visible. Incandescent lamps are inefficient light sources because only a small part of the electrical power they consume is converted into visible light. Light emitting diodes (LEDs) which are made out of semiconductor materials such as gallium arsenide (GaAs )are much more efficien ...
zener diode - WordPress.com
... The tunnel diode exhibits negative resistance. It will actually conduct well with low forward bias. With further increases in bias it reaches the negative resistance range where current will actually go down. This is achieved by heavily-doped p and n materials that create a very thin depletion regio ...
... The tunnel diode exhibits negative resistance. It will actually conduct well with low forward bias. With further increases in bias it reaches the negative resistance range where current will actually go down. This is achieved by heavily-doped p and n materials that create a very thin depletion regio ...
Schottky diodes
... thin enough compared with the equivalent wavelength of the electron that they can tunnel through. They do not have to overcome the normal forward diode voltage VF. The energy level of the conduction band of the N-type material overlaps the level of the valence band in the P-type region. With increas ...
... thin enough compared with the equivalent wavelength of the electron that they can tunnel through. They do not have to overcome the normal forward diode voltage VF. The energy level of the conduction band of the N-type material overlaps the level of the valence band in the P-type region. With increas ...
KBJ6005G - KBJ610G Features Mechanical Data
... Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically n ...
... Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically n ...
High Power Semiconductor Switches and Products
... the industry standard Press Pack Design. To complete our product range we also have Thyristors in a stud design and as rotor Thyristors. These can be supplied as individual devices, or according to customer request as a complete press pack assembley with triggering and controls. Applications include ...
... the industry standard Press Pack Design. To complete our product range we also have Thyristors in a stud design and as rotor Thyristors. These can be supplied as individual devices, or according to customer request as a complete press pack assembley with triggering and controls. Applications include ...
Custom Modules Brochure
... Extended temperature range, -55˚ - 125˚C Moisture resistance Hermetic modules Different circuit configurations – i.e. common emitter, chopper High voltage isolation Low module weight Larger free wheel diodes Package height, width and length Integrated heatsinks – both air and liquid cooled by elimin ...
... Extended temperature range, -55˚ - 125˚C Moisture resistance Hermetic modules Different circuit configurations – i.e. common emitter, chopper High voltage isolation Low module weight Larger free wheel diodes Package height, width and length Integrated heatsinks – both air and liquid cooled by elimin ...
Diodes Inc. : new compact power packages, LED drivers
... The AH180, sensing the presence of either a north or south magnetic field, is optimized to meet the low-power, low operating voltage requirements of electronic sensing applications such as position sensor in battery powered portable equipment. It is particularly suitable for cover detector applicati ...
... The AH180, sensing the presence of either a north or south magnetic field, is optimized to meet the low-power, low operating voltage requirements of electronic sensing applications such as position sensor in battery powered portable equipment. It is particularly suitable for cover detector applicati ...
5-Line Transient Voltage Suppressor Array
... to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, ...
... to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, ...
Series Stacking of TVS for Higher Voltages and Power Application
... HIGHER VOLTAGES In normal operation, a transient voltage suppressor should be invisible to the protected circuit. This is guaranteed by a very low leakage current at reverse stand-off voltage. As long as this voltage is not exceeded, the above mentioned feature is applicable. Some TVS applications r ...
... HIGHER VOLTAGES In normal operation, a transient voltage suppressor should be invisible to the protected circuit. This is guaranteed by a very low leakage current at reverse stand-off voltage. As long as this voltage is not exceeded, the above mentioned feature is applicable. Some TVS applications r ...
SMU-DDE-Assignments-Scheme of Evaluation PROGRAM Bachelor
... waveform reaches the output. This rectification requires a single diode in a single-phase supply. Rectifiers provide a unidirectional, but a pulsating DC. However, as compared to full-wave rectifiers, half-wave rectifiers create extreme ripple and much more filtering is required to remove harmon ...
... waveform reaches the output. This rectification requires a single diode in a single-phase supply. Rectifiers provide a unidirectional, but a pulsating DC. However, as compared to full-wave rectifiers, half-wave rectifiers create extreme ripple and much more filtering is required to remove harmon ...
Time Domain Modeling of Pin Control and Limiter Diodes
... 2. THEORETICAL DISCUSSION The PIN diode is characterized by a lightly doped intrinsic (or I-) region sandwiched between heavily doped p-type and n-type regions. The electrical structure arising from this physical structure is of two PN-type junctions on either end of a highly resistive region (I-reg ...
... 2. THEORETICAL DISCUSSION The PIN diode is characterized by a lightly doped intrinsic (or I-) region sandwiched between heavily doped p-type and n-type regions. The electrical structure arising from this physical structure is of two PN-type junctions on either end of a highly resistive region (I-reg ...
Advanced Power Switching and Polarity Protection for Effects
... We break the power line and insert a MOSFET transistor. In a typical effect with a positive power supply and a negative ground, we break the + supply line and hook up a P-channel MOSFET with its drain to the battery side and its source to the effect side, and its gate tied to ground with a 1M or so ...
... We break the power line and insert a MOSFET transistor. In a typical effect with a positive power supply and a negative ground, we break the + supply line and hook up a P-channel MOSFET with its drain to the battery side and its source to the effect side, and its gate tied to ground with a 1M or so ...
BYV26 Ultra / Super Fast Soft–Recovery Avalanche Rectifier
... 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as the ...
... 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as the ...
Diode
In electronics, a diode is a two-terminal electronic component that conducts primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance to the flow of current in one direction, and high (ideally infinite) resistance in the other. A semiconductor diode, the most common type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. A vacuum tube diode has two electrodes, a plate (anode) and a heated cathode. Semiconductor diodes were the first semiconductor electronic devices. The discovery of crystals' rectifying abilities was made by German physicist Ferdinand Braun in 1874. The first semiconductor diodes, called cat's whisker diodes, developed around 1906, were made of mineral crystals such as galena. Today, most diodes are made of silicon, but other semiconductors such as selenium or germanium are sometimes used.