High Temperature (>200 C) Isolated Gate Drive Topologies for
... on and Cg is discharged. The positive voltage is clamped by D2 so that the circuit output voltage is ugs = 0V (Fig. 8 (a)). For high-speed operation care must be taken with the selection of the components. The capacitance of Cg is a critical parameter because large values increase the rise and fall ...
... on and Cg is discharged. The positive voltage is clamped by D2 so that the circuit output voltage is ugs = 0V (Fig. 8 (a)). For high-speed operation care must be taken with the selection of the components. The capacitance of Cg is a critical parameter because large values increase the rise and fall ...
MAX786 Dual-Output Power-Supply Controller for Notebook Computers __________________General Description
... Two precision voltage comparators are also included. Their output stages permit them to be used as level translators for driving external N-channel MOSFETs in load-switching applications, or for more conventional logic signals. ...
... Two precision voltage comparators are also included. Their output stages permit them to be used as level translators for driving external N-channel MOSFETs in load-switching applications, or for more conventional logic signals. ...
Dynamic Voltage Restorer (DVR) System for Compensation of
... sinusoidal voltage at the contracted magnitude level and frequency. However, in practice, power systems, especially distribution systems, have numerous nonlinear loads, which significantly affect the quality of th e power supply. As a result of these nonlinear loads, the purity of the supply wavefor ...
... sinusoidal voltage at the contracted magnitude level and frequency. However, in practice, power systems, especially distribution systems, have numerous nonlinear loads, which significantly affect the quality of th e power supply. As a result of these nonlinear loads, the purity of the supply wavefor ...
Design of Gate-Ground-NMOS-Based ESD
... changed from 5 V to 3.3 V, or even 1.8 V. Thus, system voltages have not been kept at 5 V but are a mixture of 5 V and 3.3 V. For mixed-voltage I/O design, an IC with a 3.3 V power supply needs to accept 5 V input signals. In the traditional ESD protection design, the normal input signal with high v ...
... changed from 5 V to 3.3 V, or even 1.8 V. Thus, system voltages have not been kept at 5 V but are a mixture of 5 V and 3.3 V. For mixed-voltage I/O design, an IC with a 3.3 V power supply needs to accept 5 V input signals. In the traditional ESD protection design, the normal input signal with high v ...
Datasheet - Diodes Incorporated
... hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by on ...
... hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by on ...
MAX16914/MAX16915 Ideal Diode, Reverse-Battery, and Overvoltage Protection Switch/Limiter Controllers with External MOSFETs
... The MAX16914/MAX16915 low-quiescent-current overvoltage and reverse-battery protection controllers are designed for automotive and industrial systems that must tolerate high-voltage transient and fault conditions. These conditions include load dumps, voltage dips, and reversed input voltages. The co ...
... The MAX16914/MAX16915 low-quiescent-current overvoltage and reverse-battery protection controllers are designed for automotive and industrial systems that must tolerate high-voltage transient and fault conditions. These conditions include load dumps, voltage dips, and reversed input voltages. The co ...
Temperature Dependent Pspice Model of Silicon Carbide Power MOSFET
... Silicon (Si) power MOSFETs have been widely used in high frequency power converters because of their fast switching capability [1]. However, because of material properties, Si MOSFETs are limited to relatively low power applications. SiC power MOSFETs have become competitive because of its superior ...
... Silicon (Si) power MOSFETs have been widely used in high frequency power converters because of their fast switching capability [1]. However, because of material properties, Si MOSFETs are limited to relatively low power applications. SiC power MOSFETs have become competitive because of its superior ...
- Free Documents
... voltage or bypassing. fb . This allows for a . For the LT. Use of a true current source allows all the gain in the buffer amplier to provide regulation and none of that gain is needed to amplify up the reference to a higher output voltage.VOUT or . As can be seen.VOUT with low dissipation. The power ...
... voltage or bypassing. fb . This allows for a . For the LT. Use of a true current source allows all the gain in the buffer amplier to provide regulation and none of that gain is needed to amplify up the reference to a higher output voltage.VOUT or . As can be seen.VOUT with low dissipation. The power ...
Aalborg Universitet Modular Plug’n’Play Control Architectures for Three-phase Inverters in UPS Applications
... switch will be turned on in order to allow the utility to support the load directly [3]. Modular online UPS system (Fig. 1), as a kind of flexible, reliable architecture, is becoming more and more attractive in in both academic and industrial field [6]. Several inverter modules are operating at the ...
... switch will be turned on in order to allow the utility to support the load directly [3]. Modular online UPS system (Fig. 1), as a kind of flexible, reliable architecture, is becoming more and more attractive in in both academic and industrial field [6]. Several inverter modules are operating at the ...
AS1341
... The AS1341 uses a proprietary current-limiting control scheme with operation up to 100% duty cycle. The DC-DC converter pulses as needed to maintain regulation, resulting in a variable switching frequency that increases with the load. This eliminates the high-supply currents associated with conventi ...
... The AS1341 uses a proprietary current-limiting control scheme with operation up to 100% duty cycle. The DC-DC converter pulses as needed to maintain regulation, resulting in a variable switching frequency that increases with the load. This eliminates the high-supply currents associated with conventi ...
bq25071-Q1 1-A, Automotive Qualified, Single
... system. The input current is programmable from 100 mA up to 1 A using the ISET input or configurable for USB500. There is also a 4.9 V ±10% 50 mA LDO integrated into the IC for supplying low power external circuitry. The LiFePO4 charging algorithm removes the current taper typically seen as part of ...
... system. The input current is programmable from 100 mA up to 1 A using the ISET input or configurable for USB500. There is also a 4.9 V ±10% 50 mA LDO integrated into the IC for supplying low power external circuitry. The LiFePO4 charging algorithm removes the current taper typically seen as part of ...
MAX16833 Evaluation Kit Evaluates: MAX16833/MAX16833B General Description Features
... 7) Verify that the oscilloscope displays approximately 1A. ...
... 7) Verify that the oscilloscope displays approximately 1A. ...
Direct-AC, Linear LED Driver Topology: CCR Straight
... compatible with COB implementations. High power factor across voltage range. Modular design flexibility, can accommodate many functions (EMI filter, OVP, etc.) Compatible with most phase-cut dimmers. Adjustable for different LED voltages. Scalable for different currents/power levels. Predictable ele ...
... compatible with COB implementations. High power factor across voltage range. Modular design flexibility, can accommodate many functions (EMI filter, OVP, etc.) Compatible with most phase-cut dimmers. Adjustable for different LED voltages. Scalable for different currents/power levels. Predictable ele ...
Latest Technology PT IGBTs vs. Power MOSFETs
... and low conduction loss, the IGBT is the device of choice for high current and high voltage applications. Now with the latest generation of PT IGBTs, the tradeoff between switching and conduction losses is balanced so that IGBTs encroach upon the high frequency, high efficiency domain of power MOSFE ...
... and low conduction loss, the IGBT is the device of choice for high current and high voltage applications. Now with the latest generation of PT IGBTs, the tradeoff between switching and conduction losses is balanced so that IGBTs encroach upon the high frequency, high efficiency domain of power MOSFE ...
ISL9K460P3 8 A, 600 V, STEALTH II Diode —
... for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (Irr) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other pow ...
... for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (Irr) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other pow ...
FSBB15CH60 Motion SPM 3 Series FSBB15CH60 Motion SPM® 3 Series
... 5. VFO output pulse width should be determined by connecting an external capacitor (CFOD) between CFOD (pin 7) and COM (pin 2). (Example : if CFOD = 33 nF, then tFO = ms (typ.)) Please refer to the 2nd note 5 for calculation method. 6. Input signal is active-HIGH type. There is a 3.3 kresistor ...
... 5. VFO output pulse width should be determined by connecting an external capacitor (CFOD) between CFOD (pin 7) and COM (pin 2). (Example : if CFOD = 33 nF, then tFO = ms (typ.)) Please refer to the 2nd note 5 for calculation method. 6. Input signal is active-HIGH type. There is a 3.3 kresistor ...
diodes applications special purpose diodes
... where V is the bias potential across the diode. The factor is 1 for Si and 2 for Ge diodes. Vt is volt equivalent of temperature and is given by 11,600 / T. Its value at room temperature is 26 mV. Io is the reverse saturation current in mA which depends upon temperature and doping. This is called ...
... where V is the bias potential across the diode. The factor is 1 for Si and 2 for Ge diodes. Vt is volt equivalent of temperature and is given by 11,600 / T. Its value at room temperature is 26 mV. Io is the reverse saturation current in mA which depends upon temperature and doping. This is called ...
TPS51511 数据资料 dataSheet 下载
... TPS51511 is an integrated power-management solution that combines a synchronous buck controller and a high-current, source-only, low-dropout linear regulator (LDO) in a small 20-pin QFN package. Each output provides voltages required by typical graphic-system applications. The switching-mode power s ...
... TPS51511 is an integrated power-management solution that combines a synchronous buck controller and a high-current, source-only, low-dropout linear regulator (LDO) in a small 20-pin QFN package. Each output provides voltages required by typical graphic-system applications. The switching-mode power s ...
Triode
A triode is an electronic amplifying vacuum tube (or valve in British English) consisting of three electrodes inside an evacuated glass envelope: a heated filament or cathode, a grid, and a plate (anode). Invented in 1906 by Lee De Forest by adding a grid to the Fleming valve, the triode was the first electronic amplification device and the ancestor of other types of vacuum tubes such as the tetrode and pentode. Its invention founded the electronics age, making possible amplified radio technology and long-distance telephony. Triodes were widely used in consumer electronics devices such as radios and televisions until the 1970s, when transistors replaced them. Today, their main remaining use is in high-power RF amplifiers in radio transmitters and industrial RF heating devices. The word is derived from the Greek τρίοδος, tríodos, from tri- (three) and hodós (road, way), originally meaning the place where three roads meet.