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Lesson 1 - Introduction
Lesson 1 - Introduction

... • For a given device, its on-resistance decreases with the gate voltage, at least until this voltage reaches a specific value. • Power MOSFETs typically increase their on-resistance with temperature. Under some circumstances, power dissipated in this resistance causes more heating of the junction, w ...
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... Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant ...
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Simulation and Design of a high speed Solid State Switch

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SP238A 数据资料DataSheet下载
SP238A 数据资料DataSheet下载

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mc1488, sn55188, sn75188 quadruple line drivers

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IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)

... low threshold voltage PMOS and NMOS transistors based full adder load circuit [11]. The transistor level schematic of 10T13A full adder with power gating technique is shown in figure. Different threshold voltages are used therefore power gating technique also known as multi threshold CMOS technique ...
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Bipolar Junction Transistor Modeling Topics for - SMDP-VLSI

... NA should be increased when WB is reduced so that rbb’ does not increase . It leads to (1) increase in CTE , (2) reduction in β and (3) fall in DnB ...
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Stray voltage



Stray voltage is the occurrence of electrical potential between two objects that ideally should not have any voltage difference between them. Small voltages often exist between two grounded objects in separate locations, due to normal current flow in the power system. Large voltages can appear on the enclosures of electrical equipment due to a fault in the electrical power system, such as a failure of insulation.
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