NAT0000X12RXX SIP Non-Isolated Point-of
... This NAS non-isolated point-of-load (POL) dc-dc converters deliver up to 12A of current in industry standard SMT packages with high efficiency and unparalleled thermal performance. The NAS converters provide competitive cost, high performance, high reliability and quality, and flexibility of use in ...
... This NAS non-isolated point-of-load (POL) dc-dc converters deliver up to 12A of current in industry standard SMT packages with high efficiency and unparalleled thermal performance. The NAS converters provide competitive cost, high performance, high reliability and quality, and flexibility of use in ...
Single-Phase to Three-Phases Sinusoidal Waveform
... Fig.6 that show the sinusoidal waveform of three-phase which converted from the single-phase va by using the principle in Fig.3 Fig.7 that show the line voltage for supply to three-phase induction motor from the SPWM inverter by the circuits which made from the block diagram in Fig.4 Fig.8 that show ...
... Fig.6 that show the sinusoidal waveform of three-phase which converted from the single-phase va by using the principle in Fig.3 Fig.7 that show the line voltage for supply to three-phase induction motor from the SPWM inverter by the circuits which made from the block diagram in Fig.4 Fig.8 that show ...
SN65LVDT14 数据资料 dataSheet 下载
... http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requ ...
... http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requ ...
FJN3303F High Voltage Fast-Switching NPN Power Transistor FJN3303F — High V olt
... EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with ...
... EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with ...
LT6106 - 36V Low Cost High Side Current Sense in a SOT-23
... characteristics: 250μV maximum offset and 40nA maximum input bias current. Gain for each device is set by two resistors and allows for accuracy better than 1%. The LT6106 monitors current via the voltage across an external sense resistor (shunt resistor). Internal circuitry converts input voltage to ...
... characteristics: 250μV maximum offset and 40nA maximum input bias current. Gain for each device is set by two resistors and allows for accuracy better than 1%. The LT6106 monitors current via the voltage across an external sense resistor (shunt resistor). Internal circuitry converts input voltage to ...
Digital Panel Meters Modular Indicator and Controller Type UDM40
... 13 VDC ±10%, max. 50 mA 25 VDC ±10%, max. 25 mA 8.2VDC ±10%, max 10mA. 13VDC ±10%, max 40mA. 25V output to measuring input 4000 V output to power supply input RMS ...
... 13 VDC ±10%, max. 50 mA 25 VDC ±10%, max. 25 mA 8.2VDC ±10%, max 10mA. 13VDC ±10%, max 40mA. 25V output to measuring input 4000 V output to power supply input RMS ...
Supplement
... Previous publications have attributed their linear term to dielectric losses. It is possible that these losses occur in the silicon nitride membrane, due to the composition of low-stress nitride which contains significant fractions of Si. If the dielectric is thin or has pinholes, it is also possibl ...
... Previous publications have attributed their linear term to dielectric losses. It is possible that these losses occur in the silicon nitride membrane, due to the composition of low-stress nitride which contains significant fractions of Si. If the dielectric is thin or has pinholes, it is also possibl ...
Power Switch Training Module - E
... Double Pole Double Throw (DPDT) Example: On-Off (DPDT) •When the unit is turned on, both the fan and the heater are turned on at the same time. The user will decide if they want it on low or high fan with low or high heat. ...
... Double Pole Double Throw (DPDT) Example: On-Off (DPDT) •When the unit is turned on, both the fan and the heater are turned on at the same time. The user will decide if they want it on low or high fan with low or high heat. ...
Exterior Spaces
... There are many efficient LEDs, but there are also many that are not efficient. The scale of efficiency varies considerably. A standard of 40 lumens per watt (lm/W) and a life-cycle of 35,000 hours is the suggested minimum. However, this only covers the light emitted from the LED component and not wh ...
... There are many efficient LEDs, but there are also many that are not efficient. The scale of efficiency varies considerably. A standard of 40 lumens per watt (lm/W) and a life-cycle of 35,000 hours is the suggested minimum. However, this only covers the light emitted from the LED component and not wh ...
Physics and Technology
... bandgap energies of these compounds vary between 0.18 eV and 3.4 eV. However, the IREDs considered here emit in the near infrared spectral range between 800 nm and 1000 nm, and, therefore, the selection of materials is limited to GaAs and mixed crystal Ga1-XAlXAs, 0 X 0.8, made from pure compoun ...
... bandgap energies of these compounds vary between 0.18 eV and 3.4 eV. However, the IREDs considered here emit in the near infrared spectral range between 800 nm and 1000 nm, and, therefore, the selection of materials is limited to GaAs and mixed crystal Ga1-XAlXAs, 0 X 0.8, made from pure compoun ...
Special Features in Space Magnetics to support Insulation
... Besides the excellent insulation capabilities there are two other important aspects to ASP-epoxy: Because of the quartzflour in the potting the thermal conductivity is high and allows heat to be transported in an efficient way. Then the thermal expansion is in a region where mechanical stress betwe ...
... Besides the excellent insulation capabilities there are two other important aspects to ASP-epoxy: Because of the quartzflour in the potting the thermal conductivity is high and allows heat to be transported in an efficient way. Then the thermal expansion is in a region where mechanical stress betwe ...
Lab 7
... Why is it difficult to produce a square wave (a 50 % duty cycle pulse train) with a 555? The 555 Timer Chip – Monostable The monostable, or one-shot, multivibrator is an oscillator with a preferred “resting” voltage level that responds to a trigger from an external source by transitioning to the oth ...
... Why is it difficult to produce a square wave (a 50 % duty cycle pulse train) with a 555? The 555 Timer Chip – Monostable The monostable, or one-shot, multivibrator is an oscillator with a preferred “resting” voltage level that responds to a trigger from an external source by transitioning to the oth ...
development of a basic circuit of a hot-wire anemometer
... directly related to the global frequency response of the anemometer since, the specification sheets of INA 131 assure 70 kHz of operation frequency with bandwidth of –3dB and CMRR of 120 dB. This device is specific to use in bridge circuits, data acquisition, medical instrumentation and other high p ...
... directly related to the global frequency response of the anemometer since, the specification sheets of INA 131 assure 70 kHz of operation frequency with bandwidth of –3dB and CMRR of 120 dB. This device is specific to use in bridge circuits, data acquisition, medical instrumentation and other high p ...
Dynamic Thermal Management for FinFET
... For VLSI circuits, the delay of a logic gate is directly affected by the driving current (Ion ). As Ion increases, the logic gate switches faster, and vice versa. For a conventional MOSFET operating at superthreshold Vdd (e.g., 0.9 V), it is well known that the rising temperature will result in a re ...
... For VLSI circuits, the delay of a logic gate is directly affected by the driving current (Ion ). As Ion increases, the logic gate switches faster, and vice versa. For a conventional MOSFET operating at superthreshold Vdd (e.g., 0.9 V), it is well known that the rising temperature will result in a re ...
The input current for a buck power converter is discontinuous due to
... isolated from the input. The buck regulator circuit is a switching regulator, as shown in figure. It uses an inductor and a capacitor as energy storage elements so that energy can be transferred from the input to the output in discrete packets. The advantage of using switching regulators is that the ...
... isolated from the input. The buck regulator circuit is a switching regulator, as shown in figure. It uses an inductor and a capacitor as energy storage elements so that energy can be transferred from the input to the output in discrete packets. The advantage of using switching regulators is that the ...
The 2nd International Conference Computational Mechanics and
... signal that modifies this address may be given by a low-frequency oscillator (this will resolve the automatic switching between the sensors) or may be given by a push-button (this will resolve the manual selection of a certain sensor). These two options of sequential automatic connecting or manual s ...
... signal that modifies this address may be given by a low-frequency oscillator (this will resolve the automatic switching between the sensors) or may be given by a push-button (this will resolve the manual selection of a certain sensor). These two options of sequential automatic connecting or manual s ...
650V IGBT4 the optimized device
... to increase the chip thickness, to reduce the MOS channel width, and to enhance the back-side emitter efficiency. As a consequence, also the short-circuit robustness is significantly improved. ...
... to increase the chip thickness, to reduce the MOS channel width, and to enhance the back-side emitter efficiency. As a consequence, also the short-circuit robustness is significantly improved. ...
Power semiconductor devices The difference between ideal switch
... problems of using a SCR for controlling such circuits is that like a diode, the “SCR” is a unidirectional device, meaning that it passes current in one direction only, from Anode to Cathode. Circuits like shown below can be used to obtain full-wave power control in two-directions but this increases ...
... problems of using a SCR for controlling such circuits is that like a diode, the “SCR” is a unidirectional device, meaning that it passes current in one direction only, from Anode to Cathode. Circuits like shown below can be used to obtain full-wave power control in two-directions but this increases ...
Resistive opto-isolator
Resistive opto-isolator (RO), also called photoresistive opto-isolator, vactrol (after a genericized trademark introduced by Vactec, Inc. in the 1960s), analog opto-isolator or lamp-coupled photocell, is an optoelectronic device consisting of a source and detector of light, which are optically coupled and electrically isolated from each other. The light source is usually a light-emitting diode (LED), a miniature incandescent lamp, or sometimes a neon lamp, whereas the detector is a semiconductor-based photoresistor made of cadmium selenide (CdSe) or cadmium sulfide (CdS). The source and detector are coupled through a transparent glue or through the air.Electrically, RO is a resistance controlled by the current flowing through the light source. In the dark state, the resistance typically exceeds a few MOhm; when illuminated, it decreases as the inverse of the light intensity. In contrast to the photodiode and phototransistor, the photoresistor can operate in both the AC and DC circuits and have a voltage of several hundred volts across it. The harmonic distortions of the output current by the RO are typically within 0.1% at voltages below 0.5 V.RO is the first and the slowest opto-isolator: its switching time exceeds 1 ms, and for the lamp-based models can reach hundreds of milliseconds. Parasitic capacitance limits the frequency range of the photoresistor by ultrasonic frequencies. Cadmium-based photoresistors exhibit a ""memory effect"": their resistance depends on the illumination history; it also drifts during the illumination and stabilizes within hours, or even weeks for high-sensitivity models. Heating induces irreversible degradation of ROs, whereas cooling to below −25 °C dramatically increases the response time. Therefore, ROs were mostly replaced in the 1970s by the faster and more stable photodiodes and photoresistors. ROs are still used in some sound equipment, guitar amplifiers and analog synthesizers owing to their good electrical isolation, low signal distortion and ease of circuit design.