Evaluates: MAX5906–MAX5909 MAX5908 Evaluation Kit General Description Features
... The MAX5908 EV kit features a push-button switch (SW1) to allow momentary toggling of the ON pin of the MAX5908. The switch will disable the EV kit outputs or unlatches faults when a MAX5907 or MAX5909 IC has been installed on the EV kit. An external controller can be utilized to control the ON pin ...
... The MAX5908 EV kit features a push-button switch (SW1) to allow momentary toggling of the ON pin of the MAX5908. The switch will disable the EV kit outputs or unlatches faults when a MAX5907 or MAX5909 IC has been installed on the EV kit. An external controller can be utilized to control the ON pin ...
IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE)
... Diode D1 protects the regulator from damage in case the input is mistakenly short-circuited to ground while it is powered up. Without D1, the current will attempt to flow back from the output capacitor through the regulator to the short-circuited input that could damage the regulator. D1 becomes for ...
... Diode D1 protects the regulator from damage in case the input is mistakenly short-circuited to ground while it is powered up. Without D1, the current will attempt to flow back from the output capacitor through the regulator to the short-circuited input that could damage the regulator. D1 becomes for ...
SP481_83_85, Low Power Half-Duplex RS-485 Transceivers
... fail-safe feature. Fail-safe guarantees that the receiver output will be in a HIGH state when the input is left unconnected and floating. ...
... fail-safe feature. Fail-safe guarantees that the receiver output will be in a HIGH state when the input is left unconnected and floating. ...
Procedures - Faculty of Engineering
... the largest hFE for hFE1 if hFE is about constant at different IC values] and hFE,ND1 is the normalized-hFE value of the curve at TJ = +25oC in Figure AE4 (Appendix E) at the IC value corresponding to IB = 30A in Table E4.1(a). Plot the calculated hFE,N versus IC in Figure AE4. Some transistors hav ...
... the largest hFE for hFE1 if hFE is about constant at different IC values] and hFE,ND1 is the normalized-hFE value of the curve at TJ = +25oC in Figure AE4 (Appendix E) at the IC value corresponding to IB = 30A in Table E4.1(a). Plot the calculated hFE,N versus IC in Figure AE4. Some transistors hav ...
ADR525 数据手册DataSheet 下载
... operating region. All such transistors have approximately a −2 mV/°C temperature coefficient (TC), making them unsuitable for direct use as low temperature coefficient references. Extrapolation of the temperature characteristics of any one of these devices to absolute zero (with the collector curren ...
... operating region. All such transistors have approximately a −2 mV/°C temperature coefficient (TC), making them unsuitable for direct use as low temperature coefficient references. Extrapolation of the temperature characteristics of any one of these devices to absolute zero (with the collector curren ...
OPA2695
... intermediate frequency (IF) amplifier. The device has been optimized for high gain operation, and the pin outs of the two available packages (QFN-16, SO-8) have been optimized to provide symmetrical input and output paths. This architecture makes the OPA2695 an ideal choice as a differential driver, ...
... intermediate frequency (IF) amplifier. The device has been optimized for high gain operation, and the pin outs of the two available packages (QFN-16, SO-8) have been optimized to provide symmetrical input and output paths. This architecture makes the OPA2695 an ideal choice as a differential driver, ...
Procedures - Faculty of Engineering
... the largest hFE for hFE1 if hFE is about constant at different IC values] and hFE,ND1 is the normalized-hFE value of the curve at TJ = +25oC in Figure AE4 (Appendix E) at the IC value corresponding to IB = 30A in Table E4.1(a). Plot the calculated hFE,N versus IC in Figure AE4. Some transistors hav ...
... the largest hFE for hFE1 if hFE is about constant at different IC values] and hFE,ND1 is the normalized-hFE value of the curve at TJ = +25oC in Figure AE4 (Appendix E) at the IC value corresponding to IB = 30A in Table E4.1(a). Plot the calculated hFE,N versus IC in Figure AE4. Some transistors hav ...
PI Design Advice.pdf
... through it. that means 20mA of current. in order to generate say 1.1vdc out of 20mA of current you need to have a resistance of 1.1vdc/0.02a or 55 ohms. this is your shared value of Rk, common to both halves of the at7. unfortunately this is a low value--too low to rely on to provide enhanced curren ...
... through it. that means 20mA of current. in order to generate say 1.1vdc out of 20mA of current you need to have a resistance of 1.1vdc/0.02a or 55 ohms. this is your shared value of Rk, common to both halves of the at7. unfortunately this is a low value--too low to rely on to provide enhanced curren ...
MAX258 500mA, Push-Pull Transformer Driver for Isolated Power
... output voltage of the rectifier can strongly increase. To protect downstream circuitry, limit the output voltage when operating the circuit under low load conditions. If the minimum output load current is less than approximately 5mA, connect a zener diode from the output node of the rectifier to gro ...
... output voltage of the rectifier can strongly increase. To protect downstream circuitry, limit the output voltage when operating the circuit under low load conditions. If the minimum output load current is less than approximately 5mA, connect a zener diode from the output node of the rectifier to gro ...
Lab_module 3 - UniMAP Portal
... 2. Become aware of an experimental procedure to determine VTh, IN and RTh or RN. Hence the Thevenin and Norton equivalent circuits. 3. Demonstrate the conditions for maximum power transfer to a load are RL = RTh and VL = VTh/2. INTRODUCTION Through the use of Thevenin’s and Norton’s theorems, a comp ...
... 2. Become aware of an experimental procedure to determine VTh, IN and RTh or RN. Hence the Thevenin and Norton equivalent circuits. 3. Demonstrate the conditions for maximum power transfer to a load are RL = RTh and VL = VTh/2. INTRODUCTION Through the use of Thevenin’s and Norton’s theorems, a comp ...
PDF
... levels on the phase voltage. The following Fig.2.1 shows you the three-phase five-level NPC. The order of the switches is S1, S2, S3, S4, S5, S6, S7 and S8 and as it is a five-level converter it consists of 4 capacitors namely C1, C2, C3 and C4. For a dc bus voltage Vdc, the voltage across each capa ...
... levels on the phase voltage. The following Fig.2.1 shows you the three-phase five-level NPC. The order of the switches is S1, S2, S3, S4, S5, S6, S7 and S8 and as it is a five-level converter it consists of 4 capacitors namely C1, C2, C3 and C4. For a dc bus voltage Vdc, the voltage across each capa ...
D41022328
... of these transistors. And moreover, a slightly forward source–body voltage established in these transistors by boosting source voltages below the ground leads to a reduction in threshold voltages of these transistors, further increasing their driving strength. In turn, the boosted voltage at NT is t ...
... of these transistors. And moreover, a slightly forward source–body voltage established in these transistors by boosting source voltages below the ground leads to a reduction in threshold voltages of these transistors, further increasing their driving strength. In turn, the boosted voltage at NT is t ...
Improved Power Quality Based Electronic Ballast for a Fluorescent
... current essentially sinusoidal. In electronic ballast, high frequency dc-ac conversion becomes possible with the invention of solid state switching devices namely MOSFETs which have high switching capability with almost negligible losses. The preferred method to drive the fluorescent lamp is by usin ...
... current essentially sinusoidal. In electronic ballast, high frequency dc-ac conversion becomes possible with the invention of solid state switching devices namely MOSFETs which have high switching capability with almost negligible losses. The preferred method to drive the fluorescent lamp is by usin ...
Schmitt trigger
In electronics a Schmitt trigger is a comparator circuit with hysteresis implemented by applying positive feedback to the noninverting input of a comparator or differential amplifier. It is an active circuit which converts an analog input signal to a digital output signal. The circuit is named a ""trigger"" because the output retains its value until the input changes sufficiently to trigger a change. In the non-inverting configuration, when the input is higher than a chosen threshold, the output is high. When the input is below a different (lower) chosen threshold the output is low, and when the input is between the two levels the output retains its value. This dual threshold action is called hysteresis and implies that the Schmitt trigger possesses memory and can act as a bistable multivibrator (latch or flip-flop). There is a close relation between the two kinds of circuits: a Schmitt trigger can be converted into a latch and a latch can be converted into a Schmitt trigger.Schmitt trigger devices are typically used in signal conditioning applications to remove noise from signals used in digital circuits, particularly mechanical contact bounce. They are also used in closed loop negative feedback configurations to implement relaxation oscillators, used in function generators and switching power supplies.