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DATA  SHEET PMST3904 NPN switching transistor
DATA SHEET PMST3904 NPN switching transistor

... Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values an ...
BAX16 B A X
BAX16 B A X

... (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. ...
A low reference spur quadrature phase
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OP4005B - Murata
OP4005B - Murata

CHAPTER 4 BIPOLAR JUNCTION TRANSISTORS (BJTs)
CHAPTER 4 BIPOLAR JUNCTION TRANSISTORS (BJTs)

AN-1992 LM27402 Evaluation Board (Rev. B)
AN-1992 LM27402 Evaluation Board (Rev. B)

... synchronization connection. PGOOD is externally pulled up to VDD and can be monitored via an on board terminal. Two extra terminals are included to provide a network analyzer connection for control loop stability analysis. The PCB measures 1.3” x 1.8” and includes input/output banana connectors for ...
EVAL Board ISO1H811G - Infineon Technologies
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EET 221/3 - UniMAP Portal
EET 221/3 - UniMAP Portal

... OBJECTIVES To verify Kirchhoff’s Current Law (KCL) and Kirchhoff’s Voltage Law (KVL) INTRODUCTION By consideration of series and parallel connections of resistors, there are certain conditions appertaining to each form of connection. For instant, in a series circuit, the sum of voltages across each ...
BDTIC C C M - P F C
BDTIC C C M - P F C

... external sense resistor (R1). This is the input signal for the average current regulation in the current loop. It is also fed to the peak current limitation block. During power up time, high inrush currents cause high negative voltage drop at R1, driving currents out of pin 3 which could be beyond t ...
RA03M8087M
RA03M8087M

... 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate v ...
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SN65LVDM051-Q1 数据资料 dataSheet 下载

... data transmission over a controlled impedance media of approximately 100 Ω of characteristic impedance. The ...
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POWER MOSFET THRU-HOLE (MO

... HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, suc ...
CMOS Source Resistance and Effects on Source Follower Gain
CMOS Source Resistance and Effects on Source Follower Gain

... From the results it can be seen that Rs is real and has a major effect on the gain of a source follower, the results show a 5% spread in the value of Rs this is probably due to the estimates of the value of Rds when simulated. It is also worth mentioning that the value of Rs will affect the value of ...
Name Date Class _ Please turn to the section titled Current. In this
Name Date Class _ Please turn to the section titled Current. In this

... _ ...
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www.Jameco.com 1-800-831-4242 ✦ Distributed by:

Model No. 100-101 - Lake Shore Cryotronics, Inc.
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... very stable output current without noise commonly associated with AC line-powered instruments. They combine the convenience of a portable, hand-held device and the performance of a benchtop unit. They are well-suited for field maintenance and periodic sensor monitoring. They are also valuable when e ...
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DATA  SHEET PBSS4350D 50 V low V NPN transistor
DATA SHEET PBSS4350D 50 V low V NPN transistor

... Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values an ...
design of channel length modulation free mos transistor
design of channel length modulation free mos transistor

... ideal MOS characteristics due to finite channel length modulation. The prime aim is to minimize or eliminate this channel length modulation by designing suitable circuit techniques including MOS transistor, capacitor, resistor, diode etc. Once we can achieve this ideal characteristics of MOS Transis ...
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... Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation. Note 2: Current into dev ...
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Problem Solving 7 - Massachusetts Institute of Technology
Problem Solving 7 - Massachusetts Institute of Technology

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AP6503A Description Pin Assignments

... the falling edge of the oscillator clock resets the Flip-Flop. The output of the Error Amplifier increases when feedback voltage (VFB) is lower than the reference voltage of 0.925V. This also increases the inductor current as it is proportional to the EA voltage. If in one cycle the current in the p ...
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Current mirror

A current mirror is a circuit designed to copy a current through one active device by controlling the current in another active device of a circuit, keeping the output current constant regardless of loading. The current being 'copied' can be, and sometimes is, a varying signal current. Conceptually, an ideal current mirror is simply an ideal inverting current amplifier that reverses the current direction as well or it is a current-controlled current source (CCCS). The current mirror is used to provide bias currents and active loads to circuits. It can also be used to model a more realistic current source (since ideal current sources don't exist).The circuit topology covered here is one that appears in many monolithic ICs. It is a Widlar mirror without an emitter degeneration resistor in the follower (output) transistor. This topology can only be done in an IC as the matching has to be extremely close and cannot be achieved with discretes.Another topology is the Wilson mirror. The Wilson mirror solves the Early effect voltage problem in his design.
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