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ABSTRACT Title of Dissertation: MODELING AND CHARACTERIZATION OF 4H-SIC
ABSTRACT Title of Dissertation: MODELING AND CHARACTERIZATION OF 4H-SIC

... low surface mobility arising due to a rough SiC-SiO2 interface. We show that surface roughness scattering dominates at high gate biases and is the most important scattering mechanism in 4H-SiC MOSFETs. Switching characteristics of SiC lateral MOSFETs have been modeled and simulated using our custom ...
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... Thephysicsof electronic ink. A new technology based on the electric force may revolutionizethe way books and other printed matter are made. This technology, called electronicink, allows letters and graphics on a page to be changed instantly, much like the symbolsdisplayed on a computer monitor. Figu ...
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Electrical resistivity and conductivity

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