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Guess Paper – 2010 Class – X Subject – Science A metal surface
Guess Paper – 2010 Class – X Subject – Science A metal surface

... Explain why does a metal wire when connected to a cell offer resistance to the flow of current. State the S.I. unit of resistance. How are the potential difference (V), current (I) and resistance (R) related? 'The resistance of a wire is 1 ohm'. Explain the meaning of this statement. How is the curr ...
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... have unpaired electrons and hence have permanent magnetic moments due to electron spin. The permanent magnetic moments present on individual atoms/ molecules in ferromagnetic materials due to exchange interaction couplings are aligned permanently in one direction even in the absence of an external f ...
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2-17 Magnetic Field: Causes

... magnetic field is essentially zero. In some atoms, such as iron, cobalt, and neodymium, the various contributions to the magnetic field do not cancel out. In such cases, the observed total magnetic field of the atom is a dipole magnetic field, and, the atom behaves as a magnetic dipole. Substances c ...
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Electric, magnetic and electromagnetic sensors and

... We can say that a “field” exists around the magnet through which it interacts. This force field is in fact the magnetic field. The same can be observed by driving a current through a coil Since the two fields are identical, their sources are identical - currents generate magnetic fields ...
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... 2. A source injects an electron of speed v = 2 × 102 m/s into a region with a uniform magnetic field of magnitude  Find the distance, d, B = 1 × 10−3 T. The velocity of the electron makes an angle θ = 20◦ with the direction of B. from the point of injection at which the electron next crosses the fiel ...
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... • Magnetic phenomena involve the interaction of moving electric charges • A moving charge (or charges, for an electric current) alters the space around it, producing a magnetic field. A second moving charge (or current) experiences a magnetic force as a result of moving thru this magnetic field. • T ...
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2010 Japan Prizes Awarded to Prof. Shun

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... The strength of the magnetic field is proportional to the current in the wire. If you double the current, the magnetic force is doubled. Since Voltage = Current x Resistance (V = I*R), you can double the current in a wire by doubling the voltage of the source of electricity. Turns of coil If you wra ...
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PowerPoint Presentation - Electric, magnetic and

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Name Magnet Quiz Study Guide KEEP CLIPPED TO YOUR

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Ripplon-induced tunneling transverse to the magnetic field P. M. Platzman

... The first two terms in the operator V̂ q describe a kinematic interaction with ripplons which is due to the curvature of the surface on which the electron wave function is set equal to 0. The polarization interaction K q(z) is given in Ref. 7. The kinematic interaction turns out to be more important ...
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Giant magnetoresistance



Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in thin-film structures composed of alternating ferromagnetic and non-magnetic conductive layers. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR.The effect is observed as a significant change in the electrical resistance depending on whether the magnetization of adjacent ferromagnetic layers are in a parallel or an antiparallel alignment. The overall resistance is relatively low for parallel alignment and relatively high for antiparallel alignment. The magnetization direction can be controlled, for example, by applying an external magnetic field. The effect is based on the dependence of electron scattering on the spin orientation.The main application of GMR is magnetic field sensors, which are used to read data in hard disk drives, biosensors, microelectromechanical systems (MEMS) and other devices. GMR multilayer structures are also used in magnetoresistive random-access memory (MRAM) as cells that store one bit of information.In literature, the term giant magnetoresistance is sometimes confused with colossal magnetoresistance of ferromagnetic and antiferromagnetic semiconductors, which is not related to the multilayer structure.
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