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neet test paper 10 - Sigma Physics Centre
neet test paper 10 - Sigma Physics Centre

... A fully charged capacitor has a capacitance ‘C’. It is discharged through a small coil of resistance wire embedded in a thermally insulated block of specific heat capacity ‘s’ and mass ‘m’. If the temperature of the block is raised by ‘ΔT’, the potential difference ‘V’ across the capacitance is : (a ...
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... What do magnetic field lines represent. In what direction do they point? How do they indicate the strength of the magnetic field? Where, on a magnet, are the magnetic fields the strongest? What happens to the magnetic field of two magnets when they are brought close to each other? See fig 4 p 204. I ...
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... moves in a crystal when an electric field is present. The electric field is the force applied to the carrier. ▫ For electrons: vd = mn E ▫ For holes: v d = mp E ...
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... The interaction is stronger for more closely separated cations and for metal-oxygen-metal angles closer to 180 o , in spinel structure the a-b interaction > b-b interaction > a-a interaction. Ex. Transition metal monoxides, MnO, FeO, CoO, NiO, in each the cation has at least a half-filled d-level, t ...
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كيمياء الحالة الصلبة

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PHYS632_C12_32_Maxwe..

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F = BIL (f=force, b=magnetic field, i=current, l

... -Magnets exert a force on current-carrying wires -An electric charge produces an electric field in the region of space around the charge and that this field exerts a force on other electric charges placed in the field -The source of a magnetic field is moving charge, and the effect of a magnetic fie ...
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Giant magnetoresistance



Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in thin-film structures composed of alternating ferromagnetic and non-magnetic conductive layers. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR.The effect is observed as a significant change in the electrical resistance depending on whether the magnetization of adjacent ferromagnetic layers are in a parallel or an antiparallel alignment. The overall resistance is relatively low for parallel alignment and relatively high for antiparallel alignment. The magnetization direction can be controlled, for example, by applying an external magnetic field. The effect is based on the dependence of electron scattering on the spin orientation.The main application of GMR is magnetic field sensors, which are used to read data in hard disk drives, biosensors, microelectromechanical systems (MEMS) and other devices. GMR multilayer structures are also used in magnetoresistive random-access memory (MRAM) as cells that store one bit of information.In literature, the term giant magnetoresistance is sometimes confused with colossal magnetoresistance of ferromagnetic and antiferromagnetic semiconductors, which is not related to the multilayer structure.
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