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V - Chi K. Tse
V - Chi K. Tse

... One important point: The nodal method is over-complex when applied to circuits with voltage source(s). WHY? We don’t need N equations for circuits with voltage source(s) because the node voltages are partly known! ...
High Fidelity Headphone Amplifier (Rev. B)
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Electronics Lab Manual
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shunts, current shunts, and current-sensing
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MAX1184 Dual 10-Bit, 20Msps, 3V, Low-Power ADC with General Description
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... step-up converter (for 1 Li+ cell applications). The internal switching regulators include 5V synchronous MOSFETs that can be powered directly from a single Li+ cell or from the main 3.3V/5V power stages. Finally, the linear regulator is capable of sourcing and sinking 2A to support DDR termination ...
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... achieved using bipolar PWM switching. The upper and lower power switches of each half-bridge are switched on a complementary basis. As a result, the inverter output current, as well as the grid current, can always be controlled to ramp up and down continuously. Therefore, the direct control of the g ...
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Chapter 6 - La Sierra University
Chapter 6 - La Sierra University

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... A superconductor is a material that loses all resistance to the flow of electric current when it is cooled below a certain temperature, called the critical temperature or transition temperature. Above this temperature, there is usually little or no indication that the material might be a superconduc ...
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LT3759 - Wide Input Voltage Range Boost/SEPIC/Inverting Controller

... The LT3759 uses a fixed frequency, current mode control scheme to provide excellent line and load regulation. Operation can be best understood by referring to the Block Diagram in Figure 1. The start of each oscillator cycle sets the SR latch (SR1) and turns on the external power MOSFET switch M1 th ...
Physics 6B - UCSB CLAS
Physics 6B - UCSB CLAS

< 1 ... 95 96 97 98 99 100 101 102 103 ... 640 >

CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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