A NINE-SWITCH UPQC WITH VARIABLE-BAND HYSTERESIS CONTROL
... Figure 4.7 Source, shunt and load currents during normal operation. ......................................... 102 Figure 4.8 Source, series and load voltages during normal operation. ........................................ 102 Figure 4.9 Controlled dc-link voltage, load average active power, active ...
... Figure 4.7 Source, shunt and load currents during normal operation. ......................................... 102 Figure 4.8 Source, series and load voltages during normal operation. ........................................ 102 Figure 4.9 Controlled dc-link voltage, load average active power, active ...
ADL5902 - Analog Devices
... logarithm of the rms value of the input. In other words, the reading is presented directly in decibels and is scaled 1.06 V per decade, or 53 mV/dB; other slopes are easily arranged. In controller mode, the voltage applied to VSET determines the power level required at the input to null the deviatio ...
... logarithm of the rms value of the input. In other words, the reading is presented directly in decibels and is scaled 1.06 V per decade, or 53 mV/dB; other slopes are easily arranged. In controller mode, the voltage applied to VSET determines the power level required at the input to null the deviatio ...
Some Aspects of the Balun Problem
... hy all the mystery surrounding baluns? Here’s some straight talk to dispel the rumors! The balun — to use, or not to use — is one of today’s hottest topics in Amateur Radio. Because certain aspects of the connection between a coaxial feed line and a balanced antenna have been ignored, misunderstandi ...
... hy all the mystery surrounding baluns? Here’s some straight talk to dispel the rumors! The balun — to use, or not to use — is one of today’s hottest topics in Amateur Radio. Because certain aspects of the connection between a coaxial feed line and a balanced antenna have been ignored, misunderstandi ...
DT9829 Series User’s Manual Title Page UM-25325-A
... EN61000-6-1 requirements and also with the limits for a Class A digital device, pursuant to Part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference when the equipment is operated in a commercial environment. This equipment generates, uses, an ...
... EN61000-6-1 requirements and also with the limits for a Class A digital device, pursuant to Part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference when the equipment is operated in a commercial environment. This equipment generates, uses, an ...
Lampiran A Rangkaian Modem PSK 1200 Bps
... AC Electrical Characteristics* CD4049UBM/CD4049UBC TA e 25§ C, CL e 50 pF, RL e 200k, tr e tf e 20 ns, unless otherwise specified ...
... AC Electrical Characteristics* CD4049UBM/CD4049UBC TA e 25§ C, CL e 50 pF, RL e 200k, tr e tf e 20 ns, unless otherwise specified ...
New circuit principles for integrated circuits
... 6.2.1 Transistor amplifier with a resistor load ............................................................................................. 120 ...
... 6.2.1 Transistor amplifier with a resistor load ............................................................................................. 120 ...
A Design Methodology for Switched-Capacitor DC
... Switched-capacitor (SC) DC-DC power converters are a subset of DC-DC power converters that use a network of switches and capacitors to efficiently convert one voltage to another. Unlike traditional inductor-based DC-DC converters, SC converters do not rely on magnetic energy storage. This fact makes ...
... Switched-capacitor (SC) DC-DC power converters are a subset of DC-DC power converters that use a network of switches and capacitors to efficiently convert one voltage to another. Unlike traditional inductor-based DC-DC converters, SC converters do not rely on magnetic energy storage. This fact makes ...
Safety Manual Eagle Quantum Premier SIL 2 Rated Fire & Gas System ®
... All checks conducted by the Controller are completed at least once an hour. This period is called the diagnostic test interval. Note Other devices have different diagnostic test intervals. See EQP Safety Device Diagnostics. Be sure to account for this in calculations. The certifying authority that h ...
... All checks conducted by the Controller are completed at least once an hour. This period is called the diagnostic test interval. Note Other devices have different diagnostic test intervals. See EQP Safety Device Diagnostics. Be sure to account for this in calculations. The certifying authority that h ...
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... reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Phil ...
... reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Phil ...
RF Diode Design Guide
... to a higher frequency, analog signal which is radiated from the system antenna. A typical transmitter consists of low pass baseband antialiasing filters, an I/Q modulator, possibly an upconverter frequency mixer, a power amplifier subsystem and filtering. The power amplifier subsystem typically is c ...
... to a higher frequency, analog signal which is radiated from the system antenna. A typical transmitter consists of low pass baseband antialiasing filters, an I/Q modulator, possibly an upconverter frequency mixer, a power amplifier subsystem and filtering. The power amplifier subsystem typically is c ...
Avalanche Ruggedness of Local Charge Balance Power Super Junction Transistors
... The process technology of the new Super Junction power MOSFET transistors designed in ON Semiconductor (named UltiMOS) has been optimized with the aim of robustness enhancement, which has to be totally independent of the charge balance in the device. The transistors are destined to 400 V line applic ...
... The process technology of the new Super Junction power MOSFET transistors designed in ON Semiconductor (named UltiMOS) has been optimized with the aim of robustness enhancement, which has to be totally independent of the charge balance in the device. The transistors are destined to 400 V line applic ...
AIM-Spice Reference Manual
... The parameter type can be either dec, oct or lin, which specifies logarithmic, octave, or linear distribution of frequencies, respectively. The parameter nb specifies the number of frequency points per decade, octave or total depending on the value of the type parameter. fstart and fstop are the sta ...
... The parameter type can be either dec, oct or lin, which specifies logarithmic, octave, or linear distribution of frequencies, respectively. The parameter nb specifies the number of frequency points per decade, octave or total depending on the value of the type parameter. fstart and fstop are the sta ...
APPLICATION NOTE AN255-02 I²C / SMBus REPEATERS, HUBS AND EXPANDERS
... devices from the rest of the 400 kHz devices so that the 400 kHz devices can operate at their maximum speed. 2. Supporting the PCI management bus with 8 or more PCI slots 3. Isolating the I2C or SMBus to support hot plug PCI slots 4. Allowing the main I2C or SMBus to drive multiple system boards 5. ...
... devices from the rest of the 400 kHz devices so that the 400 kHz devices can operate at their maximum speed. 2. Supporting the PCI management bus with 8 or more PCI slots 3. Isolating the I2C or SMBus to support hot plug PCI slots 4. Allowing the main I2C or SMBus to drive multiple system boards 5. ...
Piezoelectric transformer based power converters
... to achieve a satisfying shape change. The DEAP devices are often referred to as ”artificial muscles” and the technology is explained in more detail in section 2.2. Within the last decade new high performing and low cost DEAP materials have emerged that enables the commercialization of the technology ...
... to achieve a satisfying shape change. The DEAP devices are often referred to as ”artificial muscles” and the technology is explained in more detail in section 2.2. Within the last decade new high performing and low cost DEAP materials have emerged that enables the commercialization of the technology ...
MAX77301 JEITA-Compliant, Li+ Charger with Smart Power General Description
... The IC controls the charging sequence for single-cell Li+ batteries from battery detection, prequalification, fast charge, top-off, and charge termination. Charging is controlled using constant current, constant voltage and constant die-temperature (CCCVCTj) regulation for safe operation under all c ...
... The IC controls the charging sequence for single-cell Li+ batteries from battery detection, prequalification, fast charge, top-off, and charge termination. Charging is controlled using constant current, constant voltage and constant die-temperature (CCCVCTj) regulation for safe operation under all c ...
GTF INSTALLATION AND OPERATION MANUAL
... • The power supply for the electronic instrumentation on the panels must always come directly from a cut-off device with fuse for the instrument part. • Electronic instrumentation and electromechanical power devices such as relays, contactors, solenoids, etc., MUST ALWAYS be powered by sep ...
... • The power supply for the electronic instrumentation on the panels must always come directly from a cut-off device with fuse for the instrument part. • Electronic instrumentation and electromechanical power devices such as relays, contactors, solenoids, etc., MUST ALWAYS be powered by sep ...
Improved equal current approach for reference
... a Compensated source currents under balanced source condition b Compensated source currents under source magnitude unbalance c Compensated source currents under source phase unbalance d Compensated source currents under source distorted condition ...
... a Compensated source currents under balanced source condition b Compensated source currents under source magnitude unbalance c Compensated source currents under source phase unbalance d Compensated source currents under source distorted condition ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.