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BQ24072T 数据资料 dataSheet 下载
BQ24072T 数据资料 dataSheet 下载

... This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete devi ...
Phase-locked-loop with lock detector
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$doc.title

2.2.1 RC Networks Word Document | GCE AS/A
2.2.1 RC Networks Word Document | GCE AS/A

4.3 MOSFET Circuits at DC
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... Q: But how can we tell which solution is correct? A: We must choose a solution that is consistent with our original ASSUMPTION. Note that neither of the solutions must be consistent with the saturation ASSUMPTION, an event meaning that our ASSUMPTION was wrong. However, one (but only one!) of the tw ...
a single-phase dual-output ac-dc converter with high
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... Figure 4.8 Outer loop current error signal without delay signal injection ............ 74 Figure 4.9 Outer loop current error signal with delay signal injection ................. 74 Figure 4.10 Main circuit of the buck-boost based, unity power factor, half-bridge, dual output converter ............. ...
ADF4360-3 Integrated Synthesizer and VCO (Rev. D)
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MAX1870A Step-Up/Step-Down Li+ Battery Charger General Description
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... Digital isolation applications with primary side supply voltage VIN > 5.5 V or load power requirements of >2 W can use Si884xx/Si886xx products. These product’s dc-dc controller uses the isolated flyback circuit topology. The advantage of this topology when compared with the Si882xx/Si883xx is that ...
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If 4.7 ´ 1016 electrons pass a particular point in a wire every second

The effect of aluminium additive A. G
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... levels of 12, 24, 48 and 192 ppm do not exhibit degenerative changes in the conduction region. The sample doped at the 96 ppm level is an exception showing traces of degeneration in this region. Degradation had no effect on the value of the characteristic voltage. Independent of the doping level, th ...
MAX1124 1.8V, 10-Bit, 250Msps Analog-to-Digital Converter with LVDS Outputs for Wideband Applications
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... The MAX1124 is a monolithic 10-bit, 250Msps analogto-digital converter (ADC) optimized for outstanding dynamic performance at high IF frequencies up to 500MHz. The product operates with conversion rates of up to 250Msps while consuming only 477mW. At 250Msps and an input frequency of 100MHz, the MAX ...
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MAX4986 - Maxim Part Number Search

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Step Down Converter With Bypass Mode for Ultra Low Power

... down DC-DC converter optimized for ultra low power wireless applications. The device is optimized to supply TI's Low Power Wireless sub 1GHz and 2.4GHz RF transceivers and System-On-Chip-solutions. The TPS62730 reduces the current consumption drawn from the battery during TX and RX mode by a high ef ...
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... recover from 2× clamp overdrive within 1.5 ns. These characteristics position the AD8036/AD8037 ideally for driving as well as buffering flash and high resolution ADCs. In addition to traditional output clamp amplifier applications, the input clamp architecture supports the clamp levels as additiona ...
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Memristive model of amoeba`s learning - UCSD Physics
Memristive model of amoeba`s learning - UCSD Physics

SECTION `X` CONTENTS
SECTION `X` CONTENTS

... This series/parallel diagram shows a very simplified version of an airbag diagram. Airbag control modules keep a very close eye on system voltages, so they aren’t very tolerant of resistance fluctuations, voltage drops, loose connections, etc. You may be called upon to struggle through some of these ...
< 1 ... 75 76 77 78 79 80 81 82 83 ... 640 >

CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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