
A 4.3-GHz VCO with 2-GHz tuning range and low phase noise
... HE voltage-controlled oscillator (VCO) is one of the most challenging parts of the radio transceiver to integrate using relatively cheap BiCMOS or CMOS processes. One reason for values of the integrated inductors are low this is that the compared to those of the discrete ones. This causes, for insta ...
... HE voltage-controlled oscillator (VCO) is one of the most challenging parts of the radio transceiver to integrate using relatively cheap BiCMOS or CMOS processes. One reason for values of the integrated inductors are low this is that the compared to those of the discrete ones. This causes, for insta ...
Ohm`s Law
... Physical example – The depth of water in a water tank. Current – Electron flow in the circuit, from + to – side of the power source (battery). Expressed in Amperes. Physical example – Water flowing through a hose. Resistance -- An electrical component that operates on voltage applied across it. Beca ...
... Physical example – The depth of water in a water tank. Current – Electron flow in the circuit, from + to – side of the power source (battery). Expressed in Amperes. Physical example – Water flowing through a hose. Resistance -- An electrical component that operates on voltage applied across it. Beca ...
Bipolar Junction Transistor - kmutt-inc
... the voltage rating applies, and the third letter is in reference to the third unmentioned terminal which is left open. The first voltage, VCBO indicates the maximum allowable collector-to-base voltage with the emitter open. The second voltage, VCEO is the maximum allowable collector-emitter voltage ...
... the voltage rating applies, and the third letter is in reference to the third unmentioned terminal which is left open. The first voltage, VCBO indicates the maximum allowable collector-to-base voltage with the emitter open. The second voltage, VCEO is the maximum allowable collector-emitter voltage ...
3) Schmitt Trigger (20 Points)
... DSTM1 (counter clock), the second trace shown is DSTM3 (flip flop clock), and DSTM2 provides an initial reset pulse to both of the devices. You can assume that all outputs are initially 0. Draw traces for all six of the points indicated: (J1, K1, Q1, J2, K2, Q2) ...
... DSTM1 (counter clock), the second trace shown is DSTM3 (flip flop clock), and DSTM2 provides an initial reset pulse to both of the devices. You can assume that all outputs are initially 0. Draw traces for all six of the points indicated: (J1, K1, Q1, J2, K2, Q2) ...
Course summary for Unit 3 "Electronics and photonics"
... Light Emitting Diodes (LEDs) are diodes that emit light when a current pass through them. Their graphs is similar to that of an ordinary diode, but they need a voltage in excess of 1.7 V to conduct and emit light. Photodiodes are diodes used in the reverse bias mode that is the left half of the abov ...
... Light Emitting Diodes (LEDs) are diodes that emit light when a current pass through them. Their graphs is similar to that of an ordinary diode, but they need a voltage in excess of 1.7 V to conduct and emit light. Photodiodes are diodes used in the reverse bias mode that is the left half of the abov ...
Introducción a los Circuitos Digitales - fc
... Nonoverlapping Clocks Nonoverlapping clocks can prevent races As long as nonoverlap exceeds clock skew We will use them in this class for safe design Industry manages skew more carefully instead ...
... Nonoverlapping Clocks Nonoverlapping clocks can prevent races As long as nonoverlap exceeds clock skew We will use them in this class for safe design Industry manages skew more carefully instead ...
A Compact Class-AB CMOS Variable Gain Amplifier
... generally required to maintain high linearity and low noise over the entire bandwidth and gain range. It is also important that the bandwidth of the amplifier remains constant when the voltage gain is varied and this can be obtained by employing current-mode techniques [5]. In portable communication ...
... generally required to maintain high linearity and low noise over the entire bandwidth and gain range. It is also important that the bandwidth of the amplifier remains constant when the voltage gain is varied and this can be obtained by employing current-mode techniques [5]. In portable communication ...
isscc 2014 / session 12 / sensors, mems, and displays / 12.8
... This paper presents a precision BJT-based temperature sensor implemented in standard CMOS. Its interface electronics consists of a continuous-time dutycycle modulator [1], whose output can be easily interfaced to a microcontroller, rather than the discrete-time ΔΣ modulators of most previous work [2 ...
... This paper presents a precision BJT-based temperature sensor implemented in standard CMOS. Its interface electronics consists of a continuous-time dutycycle modulator [1], whose output can be easily interfaced to a microcontroller, rather than the discrete-time ΔΣ modulators of most previous work [2 ...
Physics 536 - Assignment #2
... and calculate the potential difference across R2 the instant after this event. In this type of curcuit is commonly found in DC-DC converters. In such a circuit configuration, C is called a flying capacitor. 4. Consider the following circuit: L ...
... and calculate the potential difference across R2 the instant after this event. In this type of curcuit is commonly found in DC-DC converters. In such a circuit configuration, C is called a flying capacitor. 4. Consider the following circuit: L ...
Electric Charges & Current
... Static Electricity and Electrical Current is made of the same thing, electrons. ...
... Static Electricity and Electrical Current is made of the same thing, electrons. ...
Phase Detector/Frequency Synthesizer ADF4002-EP FEATURES
... should be placed as close as possible to the AVDD pin. AVDD must be the same value as DVDD. Reference Input. This CMOS input has a nominal threshold of AVDD/2 and a dc equivalent input resistance of 100 kΩ. This input can be driven from a TTL or CMOS crystal oscillator or it can be ac-coupled. Digit ...
... should be placed as close as possible to the AVDD pin. AVDD must be the same value as DVDD. Reference Input. This CMOS input has a nominal threshold of AVDD/2 and a dc equivalent input resistance of 100 kΩ. This input can be driven from a TTL or CMOS crystal oscillator or it can be ac-coupled. Digit ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.