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Y. Hu, W. Rieutort-Louis, J. Sanz-Robinson, L. Huang, B. Glisic, J.C. Sturm, S. Wagner, and N. Verma, "Large-Scale Sensing System Combining Large-Area Electronics and CMOS ICs for Structural-Health Monitoring", J. Solid-State Circuits, Vol 49, pp. 513-523 (FEB 2014).
Y. Hu, W. Rieutort-Louis, J. Sanz-Robinson, L. Huang, B. Glisic, J.C. Sturm, S. Wagner, and N. Verma, "Large-Scale Sensing System Combining Large-Area Electronics and CMOS ICs for Structural-Health Monitoring", J. Solid-State Circuits, Vol 49, pp. 513-523 (FEB 2014).

Chapter Two
Chapter Two

... R is resistance to current flow. A higher resistance means more power (higher voltage) is required to cause a given current to flow. The unit of resistance is the ohm   and one ohm is one volt per amp. RV /I G is conductance. A higher conductance means less power (lower voltage) is required to ...
Topic 5.2 Electric Circuits
Topic 5.2 Electric Circuits

Voltage Controlled Ring Oscillator with Wide Tuning Range and
Voltage Controlled Ring Oscillator with Wide Tuning Range and

... Both transient simulation results of the conventional and the proposed circuits are shown in Fig.10. The oscillation frequency for both of them are set to 370MHz. The control current Ictrl of the conventional circuit is 134µA while the control voltage Vctrl of the proposed circuit is 3V. Next, Fig.1 ...
Lesson 26
Lesson 26

Chapter 2 : Operating Principles of MOS Transistors
Chapter 2 : Operating Principles of MOS Transistors

... The channel is covered by a thin insulating layer of silicon dioxide (SiO2). The gate electrode, made of polycrystalline silicon (polysilicon or poly in short) stands over this oxide. As the oxide layer is an insulator, the DC current from the gate to the channel is zero. The source and the drain re ...
Experimental results
Experimental results

... phase shifting between the two resonant converters depending on the gain of the error amplifier. As a result the net mmf tends to cancel in primary circuit. The phase shift in the primary circuit will reduce rate of charging and subsequently will lead to improved stability of output voltage .Practic ...
the WS-G5487-C Datasheet
the WS-G5487-C Datasheet

... The DFB driver accept differential input data and provide bias and modulation currents for driving a laser. An automatic power-control (APC) feedback loop is incorporated to maintain a constant average optical power. 1550 nm DFB in an eye safe optical subassembly (OSA) mates to the fiber cable. TX_D ...
Lecture 1
Lecture 1

1.8 V, 6 LVDS/12 CMOS Outputs Low Power Clock Fanout Buffer ADCLK846
1.8 V, 6 LVDS/12 CMOS Outputs Low Power Clock Fanout Buffer ADCLK846

... Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. N ...
Current and Resistance
Current and Resistance

... is 5 amps out of the junction (to the right) ...
Calculating Resistance and Other Goodies You
Calculating Resistance and Other Goodies You

Passive-Optical Person Detector
Passive-Optical Person Detector

... millivolts, essentially independent of the absolute level at which this relative change occurs. ...
Solve Data Acquisition Compatibility Problems by Combining
Solve Data Acquisition Compatibility Problems by Combining

BiCMOS Technology - 123seminarsonly.com
BiCMOS Technology - 123seminarsonly.com

... • Flexible I/Os (i.e., TTL, CMOS or ECL) – BiCMOS technology is well suited for I/O intensive applications. ECL, TTL and CMOS input and output levels can easily be generated with no speed or tracking consequences • high performance analogue • Latchup immunity (Discussed later in course) ...
M74HCT04RM13TR - STMicroelectronics
M74HCT04RM13TR - STMicroelectronics

... packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. EC ...
Topic 2
Topic 2

Designing with A perfect operational amplifier does not exist, but
Designing with A perfect operational amplifier does not exist, but

Encoder Pair for Tamiya Twin Motor Gearbox
Encoder Pair for Tamiya Twin Motor Gearbox

... TTL AX/MX DYNAMIXEL servos directly in! 28 Digital I/O, 8 of which can also function as analog inputs Servo style 3-pin headers (gnd, vcc, signal) on all 28 I/O pins Click here for more details and documetnation on the ArbotiX Robocontroller. ...
6S06pp_L26 - University of Iowa Physics
6S06pp_L26 - University of Iowa Physics

... they loose some of their energy  the conductor (resistor) heats up • we refer to conductors as resistors because they impede (resist) the flow of current. • the battery is like a pump that re-energizes them each time they pass through it • the current flows in the direction that is opposite to the ...
ZNBG3113Q20TC Datasheet
ZNBG3113Q20TC Datasheet

... temperature range with the associated FETs and gate and drain capacitors in circuit. Capacitors CD and CG ensure that residual power supply and substrate generator noise is not allowed to affect other external circuits which may be sensitive to RF interference. They also serve to suppress any potent ...
ZNBG3113 Datasheet
ZNBG3113 Datasheet

... temperature range with the associated FETs and gate and drain capacitors in circuit. Capacitors CD and CG ensure that residual power supply and substrate generator noise is not allowed to affect other external circuits which may be sensitive to RF interference. They also serve to suppress any potent ...
The Bride of Zen: A Single Gain Stage Preamplifier Intro This is the
The Bride of Zen: A Single Gain Stage Preamplifier Intro This is the

... response. We will have much less reason to employ feedback in this circuit, and so we will not. Another advantage that the preamp circuit will enjoy over the power amplifier is the relatively small dissipation involved. The Zen single-ended power amplifier idles at more than four times its output ra ...
High Voltage Solid-State Circuits for Tube Guitar
High Voltage Solid-State Circuits for Tube Guitar

... not "self bias" like a typical cathode-biased tube stage.The MOSFET is an "enhancement device" while a triode is a "depletion" device. In this circuit, it is not necessary to use a heatsink on the IRF820. You can if you want. ...
Lab 1 Introduction to Lab Equipment and Combinational Logic
Lab 1 Introduction to Lab Equipment and Combinational Logic

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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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