
Electric current
... 17. B The individual resistors are all larger than the total resistance. 18. B The total (equivalent) resistance is smaller than the resistance of any of the resistors. ...
... 17. B The individual resistors are all larger than the total resistance. 18. B The total (equivalent) resistance is smaller than the resistance of any of the resistors. ...
MAX4575/MAX4576/MAX4577 ±15kV ESD-Protected, Low-Voltage, Dual, SPST, CMOS Analog Switches General Description
... turns off when the ESD event is finished and normal operation may be resumed. Also, keep in mind that the holding current varies significantly with temperature. The worst case is at +85°C when the holding currents drop to 70mA. Since this is a typical number to guarantee turn-off of the SCRs under a ...
... turns off when the ESD event is finished and normal operation may be resumed. Also, keep in mind that the holding current varies significantly with temperature. The worst case is at +85°C when the holding currents drop to 70mA. Since this is a typical number to guarantee turn-off of the SCRs under a ...
MT-079: Analog Multipliers
... applications including multipliers (broadband and narrowband), squarers, frequency doublers, and high frequency power measurement circuits. A consideration when using the AD834 is that, because of its very wide bandwidth, its input bias currents, approximately 50 µA per input, must be considered in ...
... applications including multipliers (broadband and narrowband), squarers, frequency doublers, and high frequency power measurement circuits. A consideration when using the AD834 is that, because of its very wide bandwidth, its input bias currents, approximately 50 µA per input, must be considered in ...
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... In order to achieve dB linear characteristics of the VGA, the implementation of exponential function is required which was done in standard 65nm CMOS technology rather than bipolar technology. This achieves a variable gain of 76dB with gain error of ±0.5dB. Due to the square and linear characteristi ...
... In order to achieve dB linear characteristics of the VGA, the implementation of exponential function is required which was done in standard 65nm CMOS technology rather than bipolar technology. This achieves a variable gain of 76dB with gain error of ±0.5dB. Due to the square and linear characteristi ...
TSM1011 - STMicroelectronics
... where Vout is the desired output voltage. To avoid the discharge of the load, the resistor bridge R1, R2 should have high impedance. For this type of application, a total value of 100 K (or more) would be appropriate for the resistors R1 and R2. For example, with R2 = 100 K, Vout = 4.10 V, VRef = ...
... where Vout is the desired output voltage. To avoid the discharge of the load, the resistor bridge R1, R2 should have high impedance. For this type of application, a total value of 100 K (or more) would be appropriate for the resistors R1 and R2. For example, with R2 = 100 K, Vout = 4.10 V, VRef = ...
NSS-MIC 2005 Conference Record Template - OSU Physics
... in pairs inside the tubes resulting in 4 independent two-cell segments per LST. High voltage (HV) is applied to the 4 segments through a custom connector that also provides the decoupling capacitor to pick up the detector signals from the anode wires. The BABAR LST detector is operated at 5.5 kV. Th ...
... in pairs inside the tubes resulting in 4 independent two-cell segments per LST. High voltage (HV) is applied to the 4 segments through a custom connector that also provides the decoupling capacitor to pick up the detector signals from the anode wires. The BABAR LST detector is operated at 5.5 kV. Th ...
MAX378/MAX379 High-Voltage, Fault-Protected Analog Multiplexers _______________General Description
... to-source voltage. The P-channel device (Q2), however, has +60V VGS and is turned off, thereby preventing the input signal from reaching the output. If the input voltage is +60V, Q1 has a negative VGS, which turns it off. Similarly, only sub-microamp leakage currents can flow from the output back to ...
... to-source voltage. The P-channel device (Q2), however, has +60V VGS and is turned off, thereby preventing the input signal from reaching the output. If the input voltage is +60V, Q1 has a negative VGS, which turns it off. Similarly, only sub-microamp leakage currents can flow from the output back to ...
A Novel Technique for Driving Capability
... the buffer is operated on class-A. Comparing (11) and (4) illustrates that the output resistance of the proposed buffer is three times smaller than the buffer in Fig.1. In fact, it is not fair to compare like this because power consumption and chip area are not included, in spite of the proposed buf ...
... the buffer is operated on class-A. Comparing (11) and (4) illustrates that the output resistance of the proposed buffer is three times smaller than the buffer in Fig.1. In fact, it is not fair to compare like this because power consumption and chip area are not included, in spite of the proposed buf ...
ECE 201 Exam #2 Review
... circuit all the voltage sources and open circuit the current sources (just like superposition). (b) If there are only dependent sources, then must use a test voltage or current source in order to calculate RTh (or ZTh) = VTest/Itest (c) If there are both independent and dependent sources, then compu ...
... circuit all the voltage sources and open circuit the current sources (just like superposition). (b) If there are only dependent sources, then must use a test voltage or current source in order to calculate RTh (or ZTh) = VTest/Itest (c) If there are both independent and dependent sources, then compu ...
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... A fundamental application of the diode, one that makes use of its severely nonlinear i-v curve, is the rectifier circuit. The circuit consists of the series connection of a diode D and a resistor R . ...
... A fundamental application of the diode, one that makes use of its severely nonlinear i-v curve, is the rectifier circuit. The circuit consists of the series connection of a diode D and a resistor R . ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.