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a High Accuracy anyCAP™ 200 mA Low Dropout Linear Regulator ADP3303
a High Accuracy anyCAP™ 200 mA Low Dropout Linear Regulator ADP3303

... Where ILOAD and IGND are load current and ground current, VIN and VOUT are input and output voltages, respectively. Assuming ILOAD = 200 mA, IGND = 2 mA, VIN = 7 V and VOUT = 5.0 V, device power dissipation is: PD = (7 V – 5 V ) 200 mA + (7 V ) 2 mA = 414 mW The proprietary package used in ADP3303 h ...
Standby - Department of ECE (NITD)
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... Transistor Stacking  Off-current reduced in complex gates (see leakage power reduction @ design time)  Some input patterns more effective than others in reducing leakage  Effective standby power reduction strategy: – Select input pattern that minimizes leakage current of combinational logic modu ...
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... whose output drives Q7’s gate at 40V, which is 10V below the rail voltage of 50V. The circuit comprising R6, Q5, D1, Figure 1 An op amp operating at 38 to 50V provides power to a load through powerR7, R8, Q6, R9, R10, and Q3 MOSFET Q7. rapidly switches D3’s anode ...
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... kit). Read the nominal values from the color codes, and measure the value with the ohm-meter. Connect the resistor directly to the 25-V supply using your circuit board. Start with the supply at zero volts and begin increasing the supply in 1-V increments. At each step, calculate the current flowing ...
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... intelligible digital display can follow changes far more slowly than an analogue movement, so often fails to show what's going on clearly. Some digital multimeters include a fast-responding bargraph display for this purpose, though the resolution of these is usually low. Analog meters are also usefu ...
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... on-board amplifiers can drive up to 10 mA from either a single or dual supply. The on-board reference that is always connected to the internal DACs has 5 mA available to drive external devices. Its compact size, low power, and economical cost-per-channel, make the DAC8426 attractive for applications ...
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... 10) If the force between 2 charges is 3.5 x 10-7 N and the distance between them is decreased by half, what is the new value for the electrical force between them? F= 3.5 x 10-7 N. Since the distance is decreased by half, the force is increases by a factor of 4. The new force is 3.5 x 4 x 10-7 = 1.4 ...
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... Students are expected to attend every class. Failure to attend class will result in loss of classroom instruction, which will not be repeated. It will be the student’s responsibility to get the instructional material they missed. Missed exams can only be taken with an excused absence. No quizzes may ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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