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OP193 数据手册DataSheet 下载
OP193 数据手册DataSheet 下载

... The OP193 family of single-supply operational amplifiers features a combination of high precision, low supply current and the ability to operate at low voltages. For high performance in single-supply systems the input and output ranges include ground, and the outputs swing from the negative rail to ...
LTC1151 - Dual ±15V Zero-Drift Operational Amplifier
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... The LTC1151 has a typical offset voltage of 0.5µV, drift of 0.01µV/°C, 0.1Hz to 10Hz input noise voltage of 1.5µVP-P, and a typical voltage gain of 140dB. It has a slew rate of 3V/µs and a gain-bandwidth product of 2.5MHz with a supply current of 0.9mA per amplifier. Overload recovery times from pos ...
power electronics - SK Engineering Academy
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... Thyristor switch connects the AC supply to load for a time ton, the switch is turned off by a gate pulse inhibiting for time t off. 7. What is the principle of step - up DC chopper? A constant voltage is applied to the inductor. Hence the current through the inductor increases linearly during the pe ...
Ohm`s Law
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ADuM1100 数据手册DataSheet下载
ADuM1100 数据手册DataSheet下载

... Changes to VDE 0884 Insulation Characteristics.........................6 Changes to Absolute Maximum Ratings........................................7 Changes to Package Branding..........................................................8 Updated TPC 3 to TPC 8......................................... ...
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... no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. ...
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ADS930 数据资料 dataSheet 下载
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LM3886 Overture™ Audio Power Amplifier Series
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TRANSPAK T761 ™ AC Input Isolating Field Configurable
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LP324-N 数据资料 dataSheet 下载
LP324-N 数据资料 dataSheet 下载

... Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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