
LMH664x Low Power, 130MHz, 75mA Rail-to
... reduced power consumption when compared against existing devices with similar performance. Input common mode voltage range extends to 0.5 V below V− and 1 V from V+. Output voltage range extends to within 40 mV of either supply rail, allowing wide dynamic range especially desirable in low voltage ap ...
... reduced power consumption when compared against existing devices with similar performance. Input common mode voltage range extends to 0.5 V below V− and 1 V from V+. Output voltage range extends to within 40 mV of either supply rail, allowing wide dynamic range especially desirable in low voltage ap ...
RAD-TOLERANT CLASS V, WIDEBAND OPERATIONAL AMPLIFIER THS4304-SP FEATURES DESCRIPTION/ORDERING INFORMATION
... SGDS038A – SEPTEMBER 2007 – REVISED OCTOBER 2007 ...
... SGDS038A – SEPTEMBER 2007 – REVISED OCTOBER 2007 ...
dc/ac converters using silicon controlled rectifiers for fluorescent
... alternating current at frequencies up to 10 kc/s, can operate on a DC input of the order of 100 V and deliver a power in the region of 1 to 10 kW. This converter is therefore eminently suited for powering fluorescent lighting systems in trains and ships. The latter type of converter can also be usef ...
... alternating current at frequencies up to 10 kc/s, can operate on a DC input of the order of 100 V and deliver a power in the region of 1 to 10 kW. This converter is therefore eminently suited for powering fluorescent lighting systems in trains and ships. The latter type of converter can also be usef ...
TAS5261 数据资料 dataSheet 下载
... gate drive, is accommodated by built-in bootstrap circuitry requiring only a few external capacitors. To provide outstanding electrical and acoustic characteristics, the PWM signal path, including gate drive and output stage, is designed as identical, independent half bridges. For this reason, each ...
... gate drive, is accommodated by built-in bootstrap circuitry requiring only a few external capacitors. To provide outstanding electrical and acoustic characteristics, the PWM signal path, including gate drive and output stage, is designed as identical, independent half bridges. For this reason, each ...
MAX4364/MAX4365 1.4W and 1W, Ultra
... Exposed Pad (TDFN Only). Internally connected to GND. Connect to a large ground plane to maximize thermal performance. Not intended as an electrical connection point. ...
... Exposed Pad (TDFN Only). Internally connected to GND. Connect to a large ground plane to maximize thermal performance. Not intended as an electrical connection point. ...
PI6C5946002
... bias and 100ohm across at RX side. Please consult ASIC datasheet if it already has 100ohm or equivalent internal termination. If so, do not connect external 100ohm across as shown in Fig. 8. This popular termination’s advantage is that it does not allow any bias through from VDD. This prevents VDD s ...
... bias and 100ohm across at RX side. Please consult ASIC datasheet if it already has 100ohm or equivalent internal termination. If so, do not connect external 100ohm across as shown in Fig. 8. This popular termination’s advantage is that it does not allow any bias through from VDD. This prevents VDD s ...
SP3249E 数据资料DataSheet下载
... convert TTL or CMOS logic levels to 5.0V EIA/ TIA-232 levels with an inverted sense relative to the input logic levels. Typically, the RS-232 output voltage swing is +5.4V with no load and +5V minimum fully loaded. The driver outputs are protected against infinite short-circuits to ground without de ...
... convert TTL or CMOS logic levels to 5.0V EIA/ TIA-232 levels with an inverted sense relative to the input logic levels. Typically, the RS-232 output voltage swing is +5.4V with no load and +5V minimum fully loaded. The driver outputs are protected against infinite short-circuits to ground without de ...
FAN5354 3 MHz, 3 A Synchronous Buck Regulator
... Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditi ...
... Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditi ...
AD6630 数据手册DataSheet 下载
... While the AD6630 is optimized for use with the AD6600 Dual Channel, Gain Ranging ADC with RSSI, it can also be used in many other IF applications. The AD6630 is designed with an input impedance of 200 Ω and an output of 400 Ω. In the typical application shown below, these values match the real porti ...
... While the AD6630 is optimized for use with the AD6600 Dual Channel, Gain Ranging ADC with RSSI, it can also be used in many other IF applications. The AD6630 is designed with an input impedance of 200 Ω and an output of 400 Ω. In the typical application shown below, these values match the real porti ...
LT5515 - 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator.
... L1, with high resonance frequency, is required for proper impedance matching. Single-ended to differential conversion can also be implemented using narrow band, discrete L-C circuits to produce the required balanced waveforms at the RF + and RF – inputs.The differential impedance of the RF inputs is ...
... L1, with high resonance frequency, is required for proper impedance matching. Single-ended to differential conversion can also be implemented using narrow band, discrete L-C circuits to produce the required balanced waveforms at the RF + and RF – inputs.The differential impedance of the RF inputs is ...
ADC0803, ADC0804 8-Bit, Microprocessor-Compatible, A/D Features Converters
... 3. For VIN(-) ≥ VIN(+) the digital output code will be 0000 0000. Two on-chip diodes are tied to each analog input (see Block Diagram) which will forward conduct for analog input voltages one diode drop below ground or one diode drop greater than the V+ supply. Be careful, during testing at low V+ l ...
... 3. For VIN(-) ≥ VIN(+) the digital output code will be 0000 0000. Two on-chip diodes are tied to each analog input (see Block Diagram) which will forward conduct for analog input voltages one diode drop below ground or one diode drop greater than the V+ supply. Be careful, during testing at low V+ l ...
Application of Artificial Neural Networks for Maximum Power Point
... Maximum power point tracking (MPPT) enables to increase efficiency of electricity production of photovoltaic (PV) module [1]. To reach the maximum instantaneous power the controller must adjust the load of PV module according MPPT algorithm depending on varying cloudiness and temperature of the modu ...
... Maximum power point tracking (MPPT) enables to increase efficiency of electricity production of photovoltaic (PV) module [1]. To reach the maximum instantaneous power the controller must adjust the load of PV module according MPPT algorithm depending on varying cloudiness and temperature of the modu ...
AN3257
... This application note describes the performance of a 90 W, wide range mains, power factor corrected AC-DC power supply demonstration board. The architecture is based on a two-stage approach: a front-end PFC pre-regulator and a downstream multi-resonant half bridge converter. Both stages are controll ...
... This application note describes the performance of a 90 W, wide range mains, power factor corrected AC-DC power supply demonstration board. The architecture is based on a two-stage approach: a front-end PFC pre-regulator and a downstream multi-resonant half bridge converter. Both stages are controll ...
95-6571 - L8124A,C,E,L and M Aquastat® Relays
... At any differential setting greater than 10°F (6°C), the R-B make temperature and the R-W break temperature remain the same (control setting minus 10°F [6°C]). The R-B break and R-W make temperature are the setpoint temperature plus the difference between the differential setting and 10°F (6°C). ...
... At any differential setting greater than 10°F (6°C), the R-B make temperature and the R-W break temperature remain the same (control setting minus 10°F [6°C]). The R-B break and R-W make temperature are the setpoint temperature plus the difference between the differential setting and 10°F (6°C). ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.