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FEATURES PIN ASSIGNMENT
FEATURES PIN ASSIGNMENT

... The DS1245AB provides full functional capability for VCC greater than 4.75 volts and write protects by 4.5 volts. The DS1245Y provides full functional capability for VCC greater than 4.5 volts and writeprotects by 4.25 volts. Data is maintained in the absence of VCC without any additional support ci ...
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Analog Devices HMC902LP3E Datasheet

... Part Number ...
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OP37 Low Noise, Precision, High Speed Operational Amplifier

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... In terms of the functionality of their circuit connection, standard reference ICs are often only available in series, or three-terminal form (VIN, Common, VOUT), and also in positive polarity only. The series types have the potential advantages of lower and more stable quiescent current, standard pr ...
single output cdm standard cell library design
single output cdm standard cell library design

... LIST OF FIGURES Fig.2.1. Full-Custom Design Flow ................................................................................. 3 Fig 2.2. ASIC Design Process [20] .................................................................................. 5 Fig 2.3. An example of the static hazard ...... ...
DISP-2003: Introduction to Digital Signal Processing
DISP-2003: Introduction to Digital Signal Processing

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On the limits of Ohm`s Law

... to 30 V on the power supply. We wrote several different but similar programs in National Instruments LabVIEW [7] to measure the response of the lamp under different conditions. The recorded data were graphed and analyzed using the Igor-Pro software package [8]. In initial work, we used a knob contro ...
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SP26LV432 数据资料DataSheet下载

... The RS-422 standard is ideal for multi-drop applications and for long-distance communication. The RS-422 protocol allows up to 10 receivers to be connected to a data bus, making it an ideal choice for multi-drop applications. Since the cabling can be as long as 4,000 feet, RS-422 Receivers have an i ...
TMP03 数据手册DataSheet下载
TMP03 数据手册DataSheet下载

... of the sampling interval in order to maintain an accurate representation of the signal in the time domain. This dictates a master clock between the digitizer and the signal processor. In the case of compact, cost-effective data acquisition systems, the addition of a buffered, high speed clock line c ...
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Chapter 7

... bridge is indicated by a voltage across the output that is proportional to the amount of deviation from the balanced state. Wheatstone A 4-legged type of bridge circuit with which bridge an unknown resistance can be accurately measured using the balanced state. Deviations in resistance can be measur ...
80K-40 High Voltage Probe
80K-40 High Voltage Probe

... Theory Of Operation The 80K-40 High Voltage probe, is designed to extend the voltage measurement range of an ac/dc voltmeter up to 40,000 volts. Electrically, the probe is a passive attenuator as shown in Figure 1. Its high input impedance (1000 MΩ), as well as its accuracy and stability characteris ...
CHEMISTRY 3080 4.0 Instrumental Methods of Chemical Analysis
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Analog Devices HMC903 Datasheet
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Discovering Ohm`s Law - Xraise Cornell

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... Logic-level input starts or stops the controller via an external user command. Allowing this pin to float turns the controller on. Pulling this pin low disables the controller. This is also the soft-start programming pin. A capacitor connected from this pin to GND programs the soft-start time. The c ...
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... most of the dielectric’s band gap. Calculated Band offsets are shown in Fig 9.24 The oxides of Zr, Hf, La, Y, and Al and their silicates all have conduction band offsets of >1eV. There are two main contributions to the dielectric constant: electronic and ionic dipoles.25 Figure 10 illustrates the fr ...
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... 1) Absolute maximum ratings If applied voltage, operating temperature range, or other absolute maximum ratings are exceeded, the LSI may be damaged. Do not apply voltages or temperatures that exceed the absolute maximum ratings. If you expect that any voltage or temperature could be exceeding the ab ...
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Source Transformations, Lecture Set 8

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LECTURE 060 – PUSH-PULL OUTPUT STAGES

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Basics of Digital Multimeters

High Power Laser Diode Driver Based on Power Converter
High Power Laser Diode Driver Based on Power Converter

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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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