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Andrew Dearn * “How to Design RF Circuits” - OSCILLATORS Introduction
Andrew Dearn * “How to Design RF Circuits” - OSCILLATORS Introduction

... (d) Positive Feedback Oscillator ...
IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE)
IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE)



... GaN HFETs can provide higher voltage operation and higher power density at microwave frequencies than other high power devices and thus are attractive for application to commercial high-power base stations. Recently, high-performance GaN HFETs on Si substrates (instead of the more customary sapphire ...
Two or three shunt resistor based current sensing circuit design in 3
Two or three shunt resistor based current sensing circuit design in 3

STABILIZED POWER SUPPLY
STABILIZED POWER SUPPLY

... Check the mechanical zero setting of the meter, Adjust to zero, if necessary, Connect the power plug at the rear of the instrument with the mams, af ter first having made the necesaary adjustments as stated in point 3° Set the range control. which simultaneously switches the meter range, for the des ...
ISL71590SEH Datasheet
ISL71590SEH Datasheet

... The ISL71590SEH is specified over temperatures of -55°C to +125°C without the need for additional circuitry to produce an output within ±1.7°C accuracy. With power requirements as low as 1.5mW (5V at +25°C), it is an ideal choice for remote sensing as any length of a well-insulated twisted pair cabl ...
OP213 - Farnell
OP213 - Farnell

AD8222 数据手册DataSheet 下载
AD8222 数据手册DataSheet 下载

... amplifier that requires only one external resistor per amplifier to set gains of 1 to 10,000. The AD8222 is the first dual-instrumentation amplifier in the small 4 mm × 4mm LFCSP. It requires the same board area as a typical single instrumentation amplifier. The smaller package allows a 2× increase ...
A Nyquist-Rate Pixel-Level ADC for CMOS Image Sensors
A Nyquist-Rate Pixel-Level ADC for CMOS Image Sensors

... produce color NTSC video with only an external power supply and a crystal oscillator. This “system-on-chip” approach of combining the functional blocks of a multichip digital camera onto a single chip reduces the imaging system’s cost and power. However, it does not fully exploit the potential of in ...
An Efficient SQRT Architecture of Carry Select
An Efficient SQRT Architecture of Carry Select

ME 104: Fall 2001 - UCSB College of Engineering
ME 104: Fall 2001 - UCSB College of Engineering

TPS2375 数据资料 dataSheet 下载
TPS2375 数据资料 dataSheet 下载

... RTN: This pin provides the switched negative power rail used by the downstream circuits. The operational and inrush current limit control current into the pin. The PG circuit monitors the RTN voltage and also uses it as the return for the PG pin pulldown transistor. The internal MOSFET body diode cl ...
INTEGRATED RESISTORS
INTEGRATED RESISTORS

Increase power factor by digitally compensating
Increase power factor by digitally compensating

Insulated-Gate Transistors Simplify AC-Motor Speed Control
Insulated-Gate Transistors Simplify AC-Motor Speed Control

... directly from TTL levels, thanks to its 1.2V, 20mA input parameters. Available photovoltaic couplers have an output-current capability of approximately 100µA. Combined with approximately 100kΩ equivalent shunt impedance and the IGT’s input capacitance, this current level yields very long switching t ...
ADS823, ADS826: 10-Bit, 60MHz Sampling Analog-To
ADS823, ADS826: 10-Bit, 60MHz Sampling Analog-To

Student Biographies
Student Biographies

Lab #2
Lab #2

... is suspended between the poles of a permanent magnet. The resulting torque on the coil is balanced at equilibrium by the torque produced by a restoring spring. The equilibrium position, indicated by a pointer connected to the coil, represents the magnitude of the current through the coil. The design ...
SP3238E
SP3238E

... unconnected, an internal 5kΩ pulldown resistor to ground will commit the output of the receiver to a HIGH state. ...
Lab 1 - Diode Circuits
Lab 1 - Diode Circuits

... Diode Types and Selection The impact of the diode parameters varies with application. For example, in an AM “crystal” radio where the signal levels are very small, a diode with a small turn-on voltage is desirable. In a power-supply application, devices that can sustain large forward currents and re ...
A digitally programmable delay element: design and analysis
A digitally programmable delay element: design and analysis

... is at the source of M1. Clearly, because and have different sizes. Therefore, when (with smaller ) is ON, the effective capacitance only seen by the source of M1 is larger compared to the case when is ON. This fact is further illustrated by simulation only results. The voltage at the source of M1 fa ...
Understanding and Applying the LT1005 Multifunction Regulator
Understanding and Applying the LT1005 Multifunction Regulator

ADP5041 Micro PMU with 1.2 A Buck, Two 300 mA LDOs
ADP5041 Micro PMU with 1.2 A Buck, Two 300 mA LDOs

... The minimum input and output capacitance should be greater than 0.70 μF over the full range of operating conditions. The full range of operating conditions in the application must be considered during device selection to ensure that the minimum capacitance specification is met. X7R and X5R type capa ...
OpAmp_Lab_I
OpAmp_Lab_I

Ch1-8 - UCLA Electrical Engineering
Ch1-8 - UCLA Electrical Engineering

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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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