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TPA3002D2 数据资料 dataSheet 下载
TPA3002D2 数据资料 dataSheet 下载

... AV = 7.3 dB, f = 1 kHz, RL = 2 kΩ, VO = 1 Vrms ...
Electronics-1
Electronics-1

International Journal of Engineering Inventions e-ISSN: 2278
International Journal of Engineering Inventions e-ISSN: 2278

MAX14840E/MAX14841E 40Mbps, +3.3V, RS
MAX14840E/MAX14841E 40Mbps, +3.3V, RS

... At high data rates and with long cable lengths, the signal at the end of the cable is attenuated and distorted due to the lowpass characteristic of the transmission line. Under these conditions, fail-safe RS-485 receivers, which have offset threshold voltages, produce recovered signals with uneven m ...
Scaling constraints in nanoelectronic random
Scaling constraints in nanoelectronic random

... interpreting the state of a particular memory cell must be larger than the probability of 1 − p. A simple, commonly used method for determining the state of a memory cell in conductivity-based memories, which store the state of the cell as a conductivity state [1, 4–6], is to use a load (in the simp ...
LM101AQML Operational Amplifiers (Rev. A)
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... Although the LM101A is designed for trouble free operation, experience has indicated that it is wise to observe certain precautions given below to protect the devices from abnormal operating conditions. It might be pointed out that the advice given here is applicable to practically any IC op amp, al ...
Project 14 - Using the Raspberry Pi to measure current
Project 14 - Using the Raspberry Pi to measure current

... MCP6002 op-amp: Although we can measure voltage directly using an Analogue to Digital Converter, it’s a bit more tricky measuring current. One way of measuring current is to insert a low value resistor and then measure the voltage across it. We are going to use one of the op-amps from the chip shown ...
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HMC-AUH232 数据资料DataSheet下载

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Applied Electronics

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... Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise ...
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A Primer on Photodiode Technology Page 1 of 11 Photodiode

... Silicon photodiodes are constructed from single crystal silicon wafers similar to those used in the manufacture of integrated circuits. The major difference is that photodiodes require higher purity silicon. The purity of silicon is directly related to its resistivity, with higher resistivity indica ...
OPA691 Wideband, Current Feedback OPERATIONAL AMPLIFIER With Disable FEATURES
OPA691 Wideband, Current Feedback OPERATIONAL AMPLIFIER With Disable FEATURES

... G = +2, VO = 2VPP G = +2, 2V Step G = +2, VO = 0.5V Step G = +2, VO = 2V Step G = +2, VO = 2V Step G = +2, VO = 2V Step G = +2, f = 5MHz, VO = 2VPP RL = 100Ω to VS /2 RL ≥ 500Ω to VS /2 RL = 100Ω to VS /2 RL ≥ 500Ω to VS /2 ...
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(with R 2 and R 3 )?

... 2) A light bulb usually fails just when switched on because the resistance is small and the current high, and thus the power delivered high (P=I2R) In the demos shown in this lecture, all lightbulbs have the same resistance if at the same temperature, but depending on the current through them, the t ...
BDTIC
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... Please note that ICE2PCXX has enhance dynamic block which is active when Vout exceed ±5% of regulated level. The enchanc dynamic block should be designed to work only during load or line change. During steady state with constant load, the enhance dynamic block should not be triggered, otherwise THD ...
LM3647 Universal Battery Charger for Li-Ion, Ni-MH and Ni-Cd Batteries LM3647 FEATURES DESCRIPTION
LM3647 Universal Battery Charger for Li-Ion, Ni-MH and Ni-Cd Batteries LM3647 FEATURES DESCRIPTION

... have it's own oscillator drive circuitry. PWM is a digital output that controls the charge voltage or turns the external current source on and off (depending on mode-selection). ...
Prepared by - nubacad.com
Prepared by - nubacad.com

... Low resistance or Current zero method: This method is employed for arc extinction in a.c. circuits only. In this method, arc resistance is kept low until current is zero where the arc extinguishes naturally and is prevented from restriking inspite of the rising voltage across the contacts. All mode ...
MAX5038/MAX5041 Dual-Phase, Parallelable, Average Current
MAX5038/MAX5041 Dual-Phase, Parallelable, Average Current

... The MAX5038/MAX5041 dual-phase, PWM controllers provide high-output-current capability in a compact package with a minimum number of external components. The MAX5038/MAX5041 utilize a dual-phase, average current-mode control that enables optimal use of low RDS(ON) MOSFETs, eliminating the need for e ...
pth05t210w.pdf
pth05t210w.pdf

... ground signal to this input disables the module’s output and turns off the output voltage. When the Inhibit control is active, the input current drawn by the regulator is significantly reduced. If the Inhibit pin is left open-circuit, the module produces an output whenever a valid input source is ap ...
LT1994 - Low Noise, Low Distortion Fully Differential Input/Output
LT1994 - Low Noise, Low Distortion Fully Differential Input/Output

... Figure 1 (RF = RI) by applying a single ended 2VP-P, 1kHz signal to VINP (VINM = 0), and measuring the output distortion (THD) at the common mode Voltage Range limits listed in the Electrical Characteristics table, and confirming the output THD is better than –40dB. The voltage range for the output c ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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