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SN74LV8153 数据资料 dataSheet 下载
SN74LV8153 数据资料 dataSheet 下载

... accepts serial input data and outputs 8-bit parallel data. The automatic data-rate detection feature of the SN74LV8153 eliminates the need for an external oscillator and helps with cost and board real-estate savings. The OUTSEL pin is used to choose between open collector and push-pull outputs. The ...
AN2123
AN2123

... In the event of a short-circuit or overcurrent in the load, a large voltage overshoot can occur across the IGBT at turn-off and can exceed the IGBT breakdown voltage. By reducing the gate voltage before turnoff, the IGBT current is limited and the potential over-voltage is reduced. This technique is ...
Lesson 18 questions – Potential dividers - science
Lesson 18 questions – Potential dividers - science

... Subtracting the second equation from the first gives: 0 V = 3  I1 + 6  I2 hence I1 = 2 I2. Substituting I1 = 2 I2 into the second equation gives: 1.6 V = 12  I2. Thus I2 = 0.13 A and I1 = 0.27 A. Current through cell = I1 + I2 = 0.40 A. pd across 3.0 resistor= I1 × 3.0  (= I2  6.0  ) = 0.8 V ...
DOC - Robotics Engineering CTE502
DOC - Robotics Engineering CTE502

... Kirchhoff’s Laws – His 1st law states that the current flowing to a given point in a circuit is equal to the current flowing away from that point. The 2 nd law states that the algebraic sum of the voltage drops in any closed circuit is equal to the applied voltage. Gustav built his work upon that of ...
Datasheet - Texas Instruments
Datasheet - Texas Instruments

... refer to Application Note AN-1187 Leadless Leadframe Package (LLP) (SNOA401).. Exceeding the maximum allowable power dissipation will cause excessive die temperature, and the regulator will go into thermal shutdown. If used in a dual-supply system where the regulator load is returned to a negative s ...
LTC4370 - Two-Supply Diode-OR Current
LTC4370 - Two-Supply Diode-OR Current

... approximately 10 to 50 times the gate capacitance (CISS) of the MOSFET switch. Maintain low board leakage on this pin for best load sharing accuracy. For example, 100nA of leakage current (equal to 1V across 10MΩ) increases the error amplifier offset by 0.7mV. Leave this pin open if only using ideal ...
AD8203 数据手册DataSheet 下载
AD8203 数据手册DataSheet 下载

... VIN = 0.01 V p-p, VOUT = 0.14 V p-p VIN = 0.28 V, VOUT = 4 V step ...
High Gain Bandwidth Product, Precision Fast FET™ Op Amp AD8067
High Gain Bandwidth Product, Precision Fast FET™ Op Amp AD8067

3.1.3 AS Level – Current Electricity Notes – LJ (2010) Detail lifted
3.1.3 AS Level – Current Electricity Notes – LJ (2010) Detail lifted

... positive terminal as opposite charges attract. They do not just experience a pull from the positive terminal – they are also pulled by the ions in the lattice – therefore there is not simply a flow of electrons in one direction – they are pulled in all directions – just more in one direction than an ...
abstract - Innovetech
abstract - Innovetech

1 Electronics and Robotics I Week 20 Source and Sink Outputs
1 Electronics and Robotics I Week 20 Source and Sink Outputs

... R2 and LED and then sinks into the PIC pin RB0. In this case, when the PIC pin RB0 is programmed to go LOW (LOW 0) the LED turns on because the pin “sinks” the current into itself. The PIC microcontroller acts as an automatic switch turning the LED on and off; pin RB0 acts as a current sink. Program ...
VCS331Z, VCS332Z, VFP4Z, CSNG
VCS331Z, VCS332Z, VFP4Z, CSNG

L6565 quasi-resonant controller
L6565 quasi-resonant controller

... Another important benefit is a high safety degree under short circuit conditions: since the conduction cycles of the MOSFET are inhibited until the transformer is fully demagnetized, flux runaway and, therefore, transformer saturation are not possible. Moreover, as during a short circuit the demagne ...
OPA2677 Dual, Wideband, High Output Current Operational Amplifier FEATURES
OPA2677 Dual, Wideband, High Output Current Operational Amplifier FEATURES

... distortion. Differential driver applications will deliver < –85dBc distortion at the peak upstream power levels of full rate ADSL. The high 200MHz bandwidth will also support the most demanding VDSL line driver requirements. ...
Precision Logarithmic and Log Ratio Amplifier
Precision Logarithmic and Log Ratio Amplifier

... NOTES: (1) Log Conformity Error is peak deviation from the best-fit straight line of VOUT versus log (I1 / I2) curve expressed as a percent of peak-to-peak full-scale. (2) May require higher supply for full dynamic range. (3) Output core log function is trimmed to 0.5V output per decade change of in ...
MOSFET power losses and how they affect power
MOSFET power losses and how they affect power

LT3492 - Triple Output LED Driver with 3000:1 PWM Dimming
LT3492 - Triple Output LED Driver with 3000:1 PWM Dimming

PowerPoint Presentation - Int2 Physics Unit2
PowerPoint Presentation - Int2 Physics Unit2

Basic Ohm`s Law
Basic Ohm`s Law

Wideband, Fixed Gain, JFET-Input AMPLIFIER OPA653 FEATURES DESCRIPTION
Wideband, Fixed Gain, JFET-Input AMPLIFIER OPA653 FEATURES DESCRIPTION

... JFET-input stage. Its very high bandwidth of 500 MHz can be used to either deliver high signal bandwidths at a gain of +2 V/V or, if driven from a low-impedance source, a gain of –1 V/V . The OPA653 is designed to provide very low noise and accurate pulse response with low overshoot and ringing. To ...
1. Scope
1. Scope

Fundamentals of Electricity - Franklin County Amateur Radio Club
Fundamentals of Electricity - Franklin County Amateur Radio Club

... potentiometer variable resistor ...
circuit depth - Department of Computer Science
circuit depth - Department of Computer Science

Discrete devices: FETs - UBC Engineering Physics Project Lab
Discrete devices: FETs - UBC Engineering Physics Project Lab

... Discrete devices: FETs Field Effect Transistors Gate voltage either ENHANCES or DEPLETES the conduction channel. JFET = Junction FET MOSFET = Metal Oxide Semiconductor FET MOSFETS have an insulating layer at gate so draw less current. Current passing from source to drain now controlled by VOLTAGE at ...
Electricity - Buckeye Valley
Electricity - Buckeye Valley

... Remember to use a ruler and pencil, draw components carefully, draw wires as straight lines (with corners as right angles!), and make sure all components are correctly draw and joined in the circuit. ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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