
Int2_Formal_Exercises _E and E
... Keep a note of your Int. 2 Physics formal homework exercises on this sheet. The Due Date should be filled in whenever you are told it, to ensure there are no misunderstandings about deadlines. Once the homework has been returned, fill in the mark in the appropriate column, and also on the chart belo ...
... Keep a note of your Int. 2 Physics formal homework exercises on this sheet. The Due Date should be filled in whenever you are told it, to ensure there are no misunderstandings about deadlines. Once the homework has been returned, fill in the mark in the appropriate column, and also on the chart belo ...
OP27
... (Continued from Page 1) PSRR and CMRR exceed 120 dB. These characteristics, coupled with long-term drift of 0.2 μV/month, allow the circuit designer to achieve performance levels previously attained only by discrete designs. Low cost, high volume production of OP27 is achieved by using an on-chip Ze ...
... (Continued from Page 1) PSRR and CMRR exceed 120 dB. These characteristics, coupled with long-term drift of 0.2 μV/month, allow the circuit designer to achieve performance levels previously attained only by discrete designs. Low cost, high volume production of OP27 is achieved by using an on-chip Ze ...
Physics Week 4(Sem. 2)
... Figure 20.24 shows a circuit composed of a 24-V battery and four resistors, whose resistances are 110, 180, 220, and 250 Ω. Find (a) the total current supplied by the battery and (b) the voltage between points A and B in the circuit. Reasoning The total current supplied by the battery can be obtaine ...
... Figure 20.24 shows a circuit composed of a 24-V battery and four resistors, whose resistances are 110, 180, 220, and 250 Ω. Find (a) the total current supplied by the battery and (b) the voltage between points A and B in the circuit. Reasoning The total current supplied by the battery can be obtaine ...
TPS65011 数据资料 dataSheet 下载
... power rails. The TPS65011 provides two highly efficient, step-down converters targeted at providing the core voltage and peripheral, I/O rails in a processor-based system. Both step-down converters enter a low power mode at light load for maximum efficiency across the widest possible range of load c ...
... power rails. The TPS65011 provides two highly efficient, step-down converters targeted at providing the core voltage and peripheral, I/O rails in a processor-based system. Both step-down converters enter a low power mode at light load for maximum efficiency across the widest possible range of load c ...
ADC音频放大器系列SSM2315 数据手册DataSheet 下载
... modulation, the need for oscillator synchronization is eliminated for designs incorporating multiple SSM2315 amplifiers. ...
... modulation, the need for oscillator synchronization is eliminated for designs incorporating multiple SSM2315 amplifiers. ...
a Increment/Decrement Digital Potentiometer AD5220
... See timing diagrams for location of measured values. All input control voltages are specified with t R = tF = 1 ns (10% to 90% of V DD) and timed from a voltage level of 1.6 V. Switching characteristics are measured using both V DD = +3 V or +5 V. Specifications subject to change without notice. ...
... See timing diagrams for location of measured values. All input control voltages are specified with t R = tF = 1 ns (10% to 90% of V DD) and timed from a voltage level of 1.6 V. Switching characteristics are measured using both V DD = +3 V or +5 V. Specifications subject to change without notice. ...
LT1641 - Positive High Voltage Hot Swap Controller
... following a short-circuit. The drop across the sense resistor is held at 12mV as the timer ramps up. Since the output did not rise bringing FB above 0.5V, the circuit turns off. ...
... following a short-circuit. The drop across the sense resistor is held at 12mV as the timer ramps up. Since the output did not rise bringing FB above 0.5V, the circuit turns off. ...
AN-EVAL3BR2280JZ
... Output ripple voltage at max. load ................................................................................................26 Output ripple voltage during burst mode at 1 W load ...................................................................27 Entering active burst mode ................. ...
... Output ripple voltage at max. load ................................................................................................26 Output ripple voltage during burst mode at 1 W load ...................................................................27 Entering active burst mode ................. ...
A Buck-Boost Type Charger with a Switched Capacitor Circuit
... is converted to an absolute voltage by a diode rectifier, and then a boost converter is used to control the waveform of the input current and to regulate the output DC voltage. For nominal operation, the output DC voltage needs to be higher than the peak value of the utility voltage. For a small-cap ...
... is converted to an absolute voltage by a diode rectifier, and then a boost converter is used to control the waveform of the input current and to regulate the output DC voltage. For nominal operation, the output DC voltage needs to be higher than the peak value of the utility voltage. For a small-cap ...
a Complete 8-Bit, 32 MSPS, 95 mW CMOS A/D Converter AD9280
... cycles. The digital output data is presented in straight binary output format. An out-of-range signal (OTR) indicates an overflow condition which can be used with the most significant bit to determine low or high overflow. The AD9280 can operate with a supply range from +2.7 V to +5.5 V, ideally sui ...
... cycles. The digital output data is presented in straight binary output format. An out-of-range signal (OTR) indicates an overflow condition which can be used with the most significant bit to determine low or high overflow. The AD9280 can operate with a supply range from +2.7 V to +5.5 V, ideally sui ...
Load Duration curve
... 1. The load duration curve gives the data in a more presentable form. In other words, it readily shows the number of hours during which the given load has prevailed. 2. The area under the load duration curve is equal to that of the corresponding load curve. Obviously, area under daily load duration ...
... 1. The load duration curve gives the data in a more presentable form. In other words, it readily shows the number of hours during which the given load has prevailed. 2. The area under the load duration curve is equal to that of the corresponding load curve. Obviously, area under daily load duration ...
UCC284-12 数据资料 dataSheet 下载
... off after a tON delay. The device then stays off for a period, tOFF, that is 40 times the tON delay. The device then begins pulsing on and off at the tON/tOFF duty cycle of 2.5%. This drastically reduces the power dissipation during short circuit such that heat sinking, if at all required, must only ...
... off after a tON delay. The device then stays off for a period, tOFF, that is 40 times the tON delay. The device then begins pulsing on and off at the tON/tOFF duty cycle of 2.5%. This drastically reduces the power dissipation during short circuit such that heat sinking, if at all required, must only ...
5.5 Fault analysis of distribution networks with DG
... dictate a DG operating power factor (p.f.) in the range of 0.95 lagging to 0.95 leading. This should be observed when applying Eqs. (19)–(21), because the rated p.f. of the synchronous generator itself may be significantly different (e.g. 0.80–0.85 leading), in order not to overestimate its fault co ...
... dictate a DG operating power factor (p.f.) in the range of 0.95 lagging to 0.95 leading. This should be observed when applying Eqs. (19)–(21), because the rated p.f. of the synchronous generator itself may be significantly different (e.g. 0.80–0.85 leading), in order not to overestimate its fault co ...
SN65LVPE501 数据资料 dataSheet 下载
... This is low power state triggered by RST = L. In sleep mode receiver termination resistor for each of the two channels is switched to ZRX-HIGH_IMP of >50 KΩ and transmitters are pulled to Hi-Z state. Device power is reduced to <1mW (TYP). To get device out of sleep mode RST is toggled L-H. Electrica ...
... This is low power state triggered by RST = L. In sleep mode receiver termination resistor for each of the two channels is switched to ZRX-HIGH_IMP of >50 KΩ and transmitters are pulled to Hi-Z state. Device power is reduced to <1mW (TYP). To get device out of sleep mode RST is toggled L-H. Electrica ...
Set Reset J K Q Q` CLK
... to produce a test current, the circuit is configured as an ohmmeter to measure the voltage drop across an external resistor. Use, reuse, recycle ... ...
... to produce a test current, the circuit is configured as an ohmmeter to measure the voltage drop across an external resistor. Use, reuse, recycle ... ...
PAM99700 Description Pin Assignments
... The PAM99700 is optimized to drive buck LED drivers using open-loop peak current mode control. This method of control enables fairly accurate LED current control without the need for high side current sensing or the design of any closed loop controllers. The IC uses very few external components and ...
... The PAM99700 is optimized to drive buck LED drivers using open-loop peak current mode control. This method of control enables fairly accurate LED current control without the need for high side current sensing or the design of any closed loop controllers. The IC uses very few external components and ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.