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Differential Amplifiers/Demo
Differential Amplifiers/Demo

... A single-ended signal is defined as one that is measured with respect to a fixed potential, usually the ground. A differential signal is defined as one that is measured between two nodes that have equal and opposite signal excursions around a fixed potential. In the strict sense, the two nodes must ...
AD8131 数据手册DataSheet 下载
AD8131 数据手册DataSheet 下载

... Single-Supply Applications ....................................................... 17 ...
GE  Application Guidelines for Non-isolated Converters Application Note
GE Application Guidelines for Non-isolated Converters Application Note

... Since the GND lead is common to both the input and output circuits, any interconnect inductance in the GND path can cause input ripple/noise to also partially show up on the output. Thus noise created from the switching action can propagate to other parts of the circuit if not properly filtered. In ...
Low-Voltage Low-Power Op Amp
Low-Voltage Low-Power Op Amp

... Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate LinCMOS technology. The LinCMOS process also features extremely high input impedance and ultra-low bias currents making these amplifiers ideal for interfacing to high-impedance sources such as sens ...
I046044854
I046044854

UM0969
UM0969

... from the mains before powering the board. When using an oscilloscope with the demonstration board, it must be isolated from the AC line. This prevents shock from occurring as a result of touching any SINGLE point in the circuit, but does NOT prevent shock when touching two or more points in the circ ...
4. Electrical characteristics
4. Electrical characteristics

... 4.6 Capacitor units The capacitor units are connected in double star arrangement. Depending on the rated voltage and power of the capacitor units, they will be fitted with internal fuses. (In case the capacitor bank uses capacitor units without internal fuse, the description name includes the letter ...
Any path along which electrons can flow is a circuit.
Any path along which electrons can flow is a circuit.

... The equivalent resistance for a pair of equal resistors in parallel is half the value of either resistor. The equivalent resistance for a pair of 1-ohm resistors in parallel is 0.5 ohm. The equivalent resistance is less because the current has “twice the path width” when it takes the parallel path. ...
OPA2822 Dual, Wideband, Low-Noise Operational Amplifier FEATURES
OPA2822 Dual, Wideband, Low-Noise Operational Amplifier FEATURES

... DISCHARGE SENSITIVITY Electrostatic discharge can cause damage ranging from performance degradation to complete device failure. Texas Instruments recommends that all integrated circuits be handled and stored using appropriate ESD protection methods. ESD damage can range from subtle performance degra ...
ISL6539 Datasheet
ISL6539 Datasheet

AP3598A Description A Product Line of
AP3598A Description A Product Line of

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Keithley 261 Picoampere Source
Keithley 261 Picoampere Source

Arc Detection: Increased Quality Control, Safety
Arc Detection: Increased Quality Control, Safety

... Arc Detection: Increased Quality Control, Safety-Hazard Detection, or Just a Nuisance? Abstract: During a dielectric withstand test, there are two failure modes that can occur in the material being tested: (a) low insulation resistance which results in excess current flow, and (b) dielectric breakdo ...
Voltage Transformers
Voltage Transformers

TPS40200-HT 数据资料 dataSheet 下载
TPS40200-HT 数据资料 dataSheet 下载

... circuit operates with inputs up to 52 V, with a power-saving feature that turns off driver current once the external FET has been fully turned on. This feature extends the flexibility of the device, allowing it to operate with an input voltage up to 52 V, without dissipating excessive power. The cir ...
EVC 250 Main Contactor  White Paper from TE Connectivity
EVC 250 Main Contactor White Paper from TE Connectivity

Fuzzy Logic Controller
Fuzzy Logic Controller

Electricity Lab NV6000 Operating Manual Ver 1.1 141
Electricity Lab NV6000 Operating Manual Ver 1.1 141

... combination. It means parallel resistances represent a single resistance and that’s why the same voltage drop is there. In combination of series and parallel circuits the parallel resistors were actually one resistor, which is then in series with the first then the rules are same as above. In series ...
LTC6605-10
LTC6605-10

... The internal op amps are fully differential, feature very low noise and distortion, and are compatible with 16-bit dynamic range systems. The inputs can accept singleended or differential signals. An input pin is provided for each amplifier to set the common mode level of the differential outputs. In ...
ADM8690 数据手册DataSheet 下载
ADM8690 数据手册DataSheet 下载

... The ADM869x family of supervisory circuits offers complete single- chip solutions for power supply monitoring and battery control functions in microprocessor systems. These functions include microprocessor reset, backup battery switchover, watchdog timer, CMOS RAM write protection, and power failure ...
AN3112 - STMicroelectronics
AN3112 - STMicroelectronics

... As a result, VCSREF determines the peak current through M and the L inductor. As VCSREF is a rectified sinusoid, the inductor peak current is also enveloped by a rectified sinusoid. The line current Iin is the average inductor current that is the low-frequency component of the inductor current resul ...
171050601 - Würth Elektronik
171050601 - Würth Elektronik

... One recommended output capacitor combination is a 220uF, 7 milliohm ESR specialty polymer cap in parallel with a 100µF 6.3V X5R ceramic. This combination provides excellent performance that may exceed the requirements of certain applications. Additionally some small ceramic capacitors can be used fo ...
Low voltage high resistance grounding system basics, C
Low voltage high resistance grounding system basics, C

OP27
OP27

... (Continued from Page 1) PSRR and CMRR exceed 120 dB. These characteristics, coupled with long-term drift of 0.2 μV/month, allow the circuit designer to achieve performance levels previously attained only by discrete designs. Low cost, high volume production of OP27 is achieved by using an on-chip Ze ...
DSMZ Ultra-High-Precision Z-Foil Surface
DSMZ Ultra-High-Precision Z-Foil Surface

... °C, PCR tracking (“∆R due to self heating”) of 5 ppm at rated power, tolerance match of 0.01 %, and load life stability of ±0.005 %. ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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