revised hw#1
... Teflon. How wide is the wire B? How far is it above the GND plane? c) Simulate the AC response of the line. Stick in a AC voltage source into node A, with a series source termination of 50 Ohms. Measure on a log/log scale the AC response of the channel, with respect to the output at “BB”. ...
... Teflon. How wide is the wire B? How far is it above the GND plane? c) Simulate the AC response of the line. Stick in a AC voltage source into node A, with a series source termination of 50 Ohms. Measure on a log/log scale the AC response of the channel, with respect to the output at “BB”. ...
THICK FILM - TTI, Inc.
... • Flip Chip design reduces TCR as compared to typical commodity chip resistors. • Heavy Copper used for terminations • Increases power handling • Reduces termination resistance • Long-side/Reverse termination available ...
... • Flip Chip design reduces TCR as compared to typical commodity chip resistors. • Heavy Copper used for terminations • Increases power handling • Reduces termination resistance • Long-side/Reverse termination available ...
Non-RF Applications for the Surface Mount Schottky Diode Pairs
... is lower than that for the HSMS280X. This is due to the lower barrier height of the former. At high values of forward current, Vf is lower for the HSMS-282X because of its lower Rs. The tradeoff, however, is a lower value of Vbr for the HSMS-282X. Thus, the circuit designer has a choice of Schottky ...
... is lower than that for the HSMS280X. This is due to the lower barrier height of the former. At high values of forward current, Vf is lower for the HSMS-282X because of its lower Rs. The tradeoff, however, is a lower value of Vbr for the HSMS-282X. Thus, the circuit designer has a choice of Schottky ...
A Switched Current, Switched Capacitor Temperature Sensor in 0.6
... of two transistors is well known [1]. This technique normally needs isolated Bipolar transistors but has also been implemented in CMOS by using the parasitic substrate PNP in an N-well process at different current densities [2]. The resulting PTAT signal may be written as: δVBE = (kT/q).ln[(Ic1.A2)/ ...
... of two transistors is well known [1]. This technique normally needs isolated Bipolar transistors but has also been implemented in CMOS by using the parasitic substrate PNP in an N-well process at different current densities [2]. The resulting PTAT signal may be written as: δVBE = (kT/q).ln[(Ic1.A2)/ ...
chapter33
... circuit and no power losses occur in the capacitor In an inductor, the source does work against the back emf of the inductor and energy is stored in the inductor, but when the current begins to decrease in the circuit, the energy is returned to the circuit ...
... circuit and no power losses occur in the capacitor In an inductor, the source does work against the back emf of the inductor and energy is stored in the inductor, but when the current begins to decrease in the circuit, the energy is returned to the circuit ...
PV Cell Fed Unified Power Quality Conditioner for Voltage Sag
... equivalent electrical circuit shown in Fig.5. For that equivalent circuit, a set of equations have been derived, based on standard theory, which allows the operation of a single solar cell to be simulated using data from manufacturers or field experiments. ...
... equivalent electrical circuit shown in Fig.5. For that equivalent circuit, a set of equations have been derived, based on standard theory, which allows the operation of a single solar cell to be simulated using data from manufacturers or field experiments. ...
Diodes
... (d) Increase the resistive load by making the resistor 47kΩ instead of 10kΩ. Observe that the ripple decreases. Once again you may need to AC-couple and to increase the magnification of the DPO. Explain the advantage of the full-wave over the half-wave rectifier in making a stable power supply. In f ...
... (d) Increase the resistive load by making the resistor 47kΩ instead of 10kΩ. Observe that the ripple decreases. Once again you may need to AC-couple and to increase the magnification of the DPO. Explain the advantage of the full-wave over the half-wave rectifier in making a stable power supply. In f ...
Basic Circuitry - Electro Tech Online
... Some electrons on the outer orbits can jump from one atom to the next atom When an electron moves, it leaves a ‘hole’ for another electron to jump into That electron leaves another hole, and so on When there is a large number electrons jumping from one atom to the next in the same direction, ...
... Some electrons on the outer orbits can jump from one atom to the next atom When an electron moves, it leaves a ‘hole’ for another electron to jump into That electron leaves another hole, and so on When there is a large number electrons jumping from one atom to the next in the same direction, ...
NATIONAL SEMICONDUCTOR (LM556CN) DUAL TIMER
... National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications. ...
... National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications. ...
ac circuits
... Note that as we had before, the inductor voltage leads the current (and VR by 90°). The total voltage across the two elements must (Kirchoff’s loop rule) equal the applied sinusoidal voltage, so the diagonal represents this sum and incorporates the fact that the two voltages are out of phase. Notice ...
... Note that as we had before, the inductor voltage leads the current (and VR by 90°). The total voltage across the two elements must (Kirchoff’s loop rule) equal the applied sinusoidal voltage, so the diagonal represents this sum and incorporates the fact that the two voltages are out of phase. Notice ...
LF347 - Slot Tech Forum
... LF147 is a high-grade device. It is specified to be able to run at higher supply voltages, consume less power, lower noise, and generally improved characteristics over the LF347 devices. The chip is tested in the die form (before it goes into a case). Those with superior characteristics are put in c ...
... LF147 is a high-grade device. It is specified to be able to run at higher supply voltages, consume less power, lower noise, and generally improved characteristics over the LF347 devices. The chip is tested in the die form (before it goes into a case). Those with superior characteristics are put in c ...
Low-Voltage (1.2-V) High-Efficiency
... With 1% output voltage ripple, the capacitance required is at least 29 µF and its ESR should be less than 15 mΩ. A Panasonic 2-V/180-µF capacitor is chosen with an ESR of 18 mΩ. The required input capacitance is calculated in equation (5). The calculated value is approximately 70 µF. Considering tha ...
... With 1% output voltage ripple, the capacitance required is at least 29 µF and its ESR should be less than 15 mΩ. A Panasonic 2-V/180-µF capacitor is chosen with an ESR of 18 mΩ. The required input capacitance is calculated in equation (5). The calculated value is approximately 70 µF. Considering tha ...
OPAMPS1 - Electro Tech Online
... TIPS: 1. When u connect Vcc of Lm324 to gnd, then it will easily get heated. 2. The input cannot be greater than Vcc 3. You should remember that when using multiple voltages, Vcc should be greater than maximum voltage. Otherwise you will get wrong results. Why Comparator is preferred over Power Tran ...
... TIPS: 1. When u connect Vcc of Lm324 to gnd, then it will easily get heated. 2. The input cannot be greater than Vcc 3. You should remember that when using multiple voltages, Vcc should be greater than maximum voltage. Otherwise you will get wrong results. Why Comparator is preferred over Power Tran ...
ZXBM1004 VARIABLE SPEED SINGLE-PHASE BLDC MOTOR CONTROLLER DESCRIPTION
... AN42 - External PWM control AN43 - Interfacing to the motor windings ...
... AN42 - External PWM control AN43 - Interfacing to the motor windings ...
AN2757
... The input lines CW/CCW, CONTROL, HALF / FULL, EN and RESET are connected to ground through a pull-down resistor which sets the low logic level as default. An external signal can be applied to change each input status. D1, C1 and C4 constitute a charge pump circuit, which generates the supply voltage ...
... The input lines CW/CCW, CONTROL, HALF / FULL, EN and RESET are connected to ground through a pull-down resistor which sets the low logic level as default. An external signal can be applied to change each input status. D1, C1 and C4 constitute a charge pump circuit, which generates the supply voltage ...
application note uc3842/3/4/5 provides low-cost current
... below ground is greatly enhanced by the transformer leakage inductance and parasitic capacitance, in addition to the magnetizing inductance and FET gate capacitance. Circuit implementation is similar to the previous example. ...
... below ground is greatly enhanced by the transformer leakage inductance and parasitic capacitance, in addition to the magnetizing inductance and FET gate capacitance. Circuit implementation is similar to the previous example. ...
1.1.11.2 Theory of operation
... (i.e. Inrush current) that can cause voltage fluctuations and affect the performance of other circuits connected to a common power supply. The source for this problem is often large capacitors with very low Input impedance. To counteract this issue, components can be added in series to throttle back ...
... (i.e. Inrush current) that can cause voltage fluctuations and affect the performance of other circuits connected to a common power supply. The source for this problem is often large capacitors with very low Input impedance. To counteract this issue, components can be added in series to throttle back ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.