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幻灯片 1 - 信息科学与技术学院 - Sun Yat
幻灯片 1 - 信息科学与技术学院 - Sun Yat

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... most case, the switch SW has unidirectional voltage-blocking capabilities and unidirectional current-conduction capabilities. The switch is implemented with power MOSFET, BJT or IGBT. The switch is being operated with a duty ratio D defined as the ratio of the switch on time to the sum of the on tim ...
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... slowly (0.2 Hz) from −10 V to +10 V under no load. This is the least stressful situation to the part because the overall power in the chip does not change. Only the location of the power in the output device changes. Figure 26 shows the input offset voltage change to Side B when Side A is driving a ...
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... Bridge circuits also suffer from the disadvantage of ripple. Harmonics are introduced in supply as well as load side. Power factor control is also a problem in these drives as these suffer from poor power factor. Supply voltage goes to zero in every half cycle; hence, line commutation is used. As a ...
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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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