EMI Filter Design
... put a part here, a resistor must be used in series to limit the current. Avoid this network if possible – C3 must be a costly regulatory-approved part. We will also try to operate with only a common-mode choke in the circuit. The part is needed anyway for common-mode noise, and its leakage inductanc ...
... put a part here, a resistor must be used in series to limit the current. Avoid this network if possible – C3 must be a costly regulatory-approved part. We will also try to operate with only a common-mode choke in the circuit. The part is needed anyway for common-mode noise, and its leakage inductanc ...
AMS317 数据手册DataSheet 下载
... The thermal resistance from the junction to the tab for the AMS317 is 15°C/W; thermal resistance from tab to ambient can be as low as 30°C/W. The total thermal resistance from junction to ambient can be as low as 45°C/W. This requires a reasonable sized PC board with at least on layer of copper to s ...
... The thermal resistance from the junction to the tab for the AMS317 is 15°C/W; thermal resistance from tab to ambient can be as low as 30°C/W. The total thermal resistance from junction to ambient can be as low as 45°C/W. This requires a reasonable sized PC board with at least on layer of copper to s ...
IS31LT3380 MR16 Lighting Evaluation Board Guide Description
... use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of it ...
... use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of it ...
Chapter 5
... EHPs further away from the depletion region than Le are lost by recombination. It is therefore important to have the minority carrier diffusion length Le be as long as possible. This is the reason for choosing this side of a si pn junction to be p-type which makes electrons the minority carriers; th ...
... EHPs further away from the depletion region than Le are lost by recombination. It is therefore important to have the minority carrier diffusion length Le be as long as possible. This is the reason for choosing this side of a si pn junction to be p-type which makes electrons the minority carriers; th ...
Advanced Monolithic Systems
... Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Note 2: Unless otherwise specified VOUT = VSEN ...
... Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Note 2: Unless otherwise specified VOUT = VSEN ...
74VHCT574A Octal D-Type Flip-Flop with 3-STATE Outputs 7 4
... flip-flop with 3-STATE output fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. This 8-bit D-type flipflop is controlled by a clock input (CP) and an Output Enable input (OE) ...
... flip-flop with 3-STATE output fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. This 8-bit D-type flipflop is controlled by a clock input (CP) and an Output Enable input (OE) ...
Improvement of Voltage Stability by the Advanced High Side Voltage
... positive, then this means that damping, D, is added and thus ...
... positive, then this means that damping, D, is added and thus ...
ZXSC100 SINGLE CELL DC-DC CONVERTER SOLUTION Description
... The ZXSC100 is non-synchronous PFM, DC-DC controller IC which, when combined with a high performance external transistor, enables the production of a high efficiency boost converter for use in single cell applications. A block diagram is shown for the ZXSC100 on page 2. A shutdown circuit turns the ...
... The ZXSC100 is non-synchronous PFM, DC-DC controller IC which, when combined with a high performance external transistor, enables the production of a high efficiency boost converter for use in single cell applications. A block diagram is shown for the ZXSC100 on page 2. A shutdown circuit turns the ...
2.5.3 Station Blackout Alternate AC Source 1.0 Description
... safe shutdown condition during non design basis accident station blackout conditions. ...
... safe shutdown condition during non design basis accident station blackout conditions. ...
16) It`s the Law, per Mr Ohm Ω
... • T5A10 Go outside your home or condo and gaze at the power meter measuring the rate at which electrical energy is being consumed by all the gadgets inside your new ham shack! Luckily, your modern ham gear won’t consume much energy so your power bill won’t go up by more than a few cents per month! T ...
... • T5A10 Go outside your home or condo and gaze at the power meter measuring the rate at which electrical energy is being consumed by all the gadgets inside your new ham shack! Luckily, your modern ham gear won’t consume much energy so your power bill won’t go up by more than a few cents per month! T ...
73101 Pocket Digital Multimeter
... 5. Do not use the instrument if there is any damage to the casing or when the casing is removed. 6. Be careful not to across the Barrier when using the test leads. 7. Be sure to disconnect the test leads from the circuit when changing the function switch. 8. Before starting measurement, make sure th ...
... 5. Do not use the instrument if there is any damage to the casing or when the casing is removed. 6. Be careful not to across the Barrier when using the test leads. 7. Be sure to disconnect the test leads from the circuit when changing the function switch. 8. Before starting measurement, make sure th ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.