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Small Signal * Low Frequency Transistor amplifier Circuits
Small Signal * Low Frequency Transistor amplifier Circuits

MAX1595 Regulated 3.3V/5.0V Step-Up/Step-Down Charge Pump General Description
MAX1595 Regulated 3.3V/5.0V Step-Up/Step-Down Charge Pump General Description

... Using white LEDs to backlight LCDs is an increasingly popular approach for portable information devices (Figure 2). Because the forward voltage of white LEDs exceeds the available battery voltage, the use of a charge pump such as the MAX1595 provides high efficiency, small size, and constant light o ...
7_electric_1216
7_electric_1216

Irradiation tests of voltage limiters
Irradiation tests of voltage limiters

... done in two steps. In the first fluence was 2.5x1011 n/cm2 and in the second 3.5x1011 n/cm2 were added so that the total neutron fluence was 6x1011 n/cm2. The irradiated limiters were then irradiated also with ionization dose of 35 krad. During neutron irradiation the limiters were exposed to around ...
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Ghghghghgh

AN1637: Level Shifting Between 1.8V and 3.3V Using I2C
AN1637: Level Shifting Between 1.8V and 3.3V Using I2C

... Level Shifting Between 1.8V and 3.3V Using I2C Buffers As the trend in low voltage microcontrollers migrates to 1.8V logic levels, I2C bus systems will need logic level shifting to communicate with 3.3V I2C slave devices. Without level shifting, the output logic levels of mixed voltage devices are n ...
TPS76901-Q1 数据资料 dataSheet 下载
TPS76901-Q1 数据资料 dataSheet 下载

... ‡ The JEDEC Low K (1s) board design used to derive this data was a 3 inch x 3 inch, two layer board with 2 ounce copper traces on top of the board. § The JEDEC High K (2s2p) board design used to derive this data was a 3 inch x 3 inch, multilayer board with 1 ounce internal power and ground planes an ...
Flicker Noise in GaN/Al Ga N Doped Channel Heterostructure Field
Flicker Noise in GaN/Al Ga N Doped Channel Heterostructure Field

SGM8955/6 1.8V, Micro-Power CMOS Zero
SGM8955/6 1.8V, Micro-Power CMOS Zero

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ams AG

Prezentacja programu PowerPoint
Prezentacja programu PowerPoint

... At very low temperatures the relative changes of semicondutor resistance are higher and absorbing samples are thicker (lower specific heat) what increases absorption. In a far infrared region these detectors have detectivities comparable to those of photonic detectors, hence their applications in as ...
Slash Voltage Rating
Slash Voltage Rating

... Slash voltage rated OCPDs must be utilized only on solidly grounded systems. This automatically eliminates their usage on impedance-grounded and ungrounded systems. They can be properly utilized on solidly grounded, wye systems, where the voltage to ground does not exceed the device’s lower voltage ...
Data Sheet WHITE LED STEP-UP CONVERTER AP3032 General
Data Sheet WHITE LED STEP-UP CONVERTER AP3032 General

... The AP3032 is a boost DC-DC converter which uses a constant frequency, current mode control scheme to provide excellent line and load regulation. Operation can be best understood by referring to the Figure 21. At the start of each oscillator cycle, switch Q1 turns on. The switch current will increas ...
MAX78700 Multichannel, Isolated, Precision ADC General Description Benefits and Features
MAX78700 Multichannel, Isolated, Precision ADC General Description Benefits and Features

... voltage from this sensor is measured by the ADC and sent to the host. During manufacturing test, the circuit is calibrated by measuring the voltage at room temperature and storing the value in the OTP memory. A resistor-divider scales the rectified power-supply voltage, VCC, to match the input range ...
ELEC 195 - Circuits Theory II - MyWeb at WIT
ELEC 195 - Circuits Theory II - MyWeb at WIT

BC SM220, SM240 Damper actuators 15Nm
BC SM220, SM240 Damper actuators 15Nm

... The damper actuator is fitted with a universal spindle clamp for quick and easy mounting directly on the damper spindle. The actuator is supplied with an antirotation strap for fixing it in position. ...
IS31AP4991
IS31AP4991

Presentation
Presentation

Section 5 - "Neutralization"
Section 5 - "Neutralization"

H-bridge inverter control circuit lab document
H-bridge inverter control circuit lab document

Examples of experiments - CMA
Examples of experiments - CMA

A. Eddy current losses - Electrical and Computer Engineering
A. Eddy current losses - Electrical and Computer Engineering

DESIGN, FABRICATION AND ELECTROMECHANICAL CHARACTERISTICS OF A MEMS BASED MICROMIRROR Talari Rambabu
DESIGN, FABRICATION AND ELECTROMECHANICAL CHARACTERISTICS OF A MEMS BASED MICROMIRROR Talari Rambabu

... infinitesimally-small capacitors of width dx. Therefore, the electrostatic torque Me [1] is given by ...
Understanding Basic Analog - Circuit Equations
Understanding Basic Analog - Circuit Equations

... Although this application note tries to minimize math, some algebra is germane to the understanding of analog electronics. Math and physics are presented in this application note in the manner in which they are used later, so no practice exercises are given. For example, after the voltage divider ru ...
Resitance and Resistivity - 2010-ComprehensivePortfolio
Resitance and Resistivity - 2010-ComprehensivePortfolio

... A simple circuit has a total resistance of 1.2 x 10² ohms and an applied potential difference of 2.00 x 10² volts. What is the current at any particular point in the circuit? ...
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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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