E044043336
... Disturbances such as voltage sags and swells, short duration interruptions, harmonics and transients may disrupt the processes and lead to considerable economic loss [3,4]. A power distribution system is similar to a vast network of rivers. It is important to remove any system faults so that the res ...
... Disturbances such as voltage sags and swells, short duration interruptions, harmonics and transients may disrupt the processes and lead to considerable economic loss [3,4]. A power distribution system is similar to a vast network of rivers. It is important to remove any system faults so that the res ...
Study and Analysis of Universal Gates Using Stacking Low
... techniques at the different levels of the design process have been implemented to reduce the power dissipation at the circuit, architectural and system level. Conventional NAND gate and Nor gate are designed snd then compared with the stack NAND and stack NOR using 180nm technology. Index Terms— pow ...
... techniques at the different levels of the design process have been implemented to reduce the power dissipation at the circuit, architectural and system level. Conventional NAND gate and Nor gate are designed snd then compared with the stack NAND and stack NOR using 180nm technology. Index Terms— pow ...
Current Transducer CTSR 0.3-TP/SP14 I = 300 mA
... Minimum and maximum values for specified limiting and safety conditions have to be understood as such as well as values shown in “typical” graphs. On the other hand, measured values are part of a statistical distribution that can be specified by an interval with upper and lower limits and a probabil ...
... Minimum and maximum values for specified limiting and safety conditions have to be understood as such as well as values shown in “typical” graphs. On the other hand, measured values are part of a statistical distribution that can be specified by an interval with upper and lower limits and a probabil ...
Trubitsyn, A., B. Pierquet, A. Hayman, and D.J. Perreault, “High-Efficiency, Grid-Tie Inverter for Photovoltaic Applications,” 2010 IEEE Energy Conversion Congress and Exposition , pp. 2803-2810, Sept. 2010.
... a high-frequency quasi-sinusoidal AC current ix . A half-wave cycloconverter operates under zero-voltage switching to downconvert the high-frequency AC current, yielding unity-powerfactor output current at line frequency. This cycloconverter, which is new to the authors’ knowledge, provides smaller ...
... a high-frequency quasi-sinusoidal AC current ix . A half-wave cycloconverter operates under zero-voltage switching to downconvert the high-frequency AC current, yielding unity-powerfactor output current at line frequency. This cycloconverter, which is new to the authors’ knowledge, provides smaller ...
COMWAVE2
... A triangular voltage waveform given by the Fourier series V = 123 inductance of 0.1 H and a capacitance of 25 ~. Determine the circuit current. 11.3.5 Selective resonance The presence of harmonics in a waveform may give rise to selective resonance. This is when a circuit containing both inductance a ...
... A triangular voltage waveform given by the Fourier series V = 123 inductance of 0.1 H and a capacitance of 25 ~. Determine the circuit current. 11.3.5 Selective resonance The presence of harmonics in a waveform may give rise to selective resonance. This is when a circuit containing both inductance a ...
Aalborg Universitet Maheshwari, Ramkrishan; Trintis, Ionut; Gohil, Ghanshyamsinh Vijaysinh; Chaudhary, Sanjay
... and the 100 Hz component of the output isd depends on value of gain k. For k = 1, the output isd due to the 100 Hz component of vgd will be zero and the front-end converter will draw balanced three-phase current even in the presence of the negative-sequence component in the grid voltage supply. By c ...
... and the 100 Hz component of the output isd depends on value of gain k. For k = 1, the output isd due to the 100 Hz component of vgd will be zero and the front-end converter will draw balanced three-phase current even in the presence of the negative-sequence component in the grid voltage supply. By c ...
UCC2583 数据资料 dataSheet 下载
... and has ±500mV of hysteresis. The trip levels are approximate 1.0V and 0.0V. The designer should prevent the SYNC pin from exceeding 0.3V below ground as this will turn on the ESD diode. ...
... and has ±500mV of hysteresis. The trip levels are approximate 1.0V and 0.0V. The designer should prevent the SYNC pin from exceeding 0.3V below ground as this will turn on the ESD diode. ...
BDTIC IGBT4 – 650V, 1200V, 1700V State of the art IGBT technology
... of the IGBT in terms of VCEsat values. This feature in combination with the optimized switching characteristics has made the power switches more efficient. Power modules with IGBT4 are available with up to 50% higher current density compared to the previous generation. In addition the technology of ...
... of the IGBT in terms of VCEsat values. This feature in combination with the optimized switching characteristics has made the power switches more efficient. Power modules with IGBT4 are available with up to 50% higher current density compared to the previous generation. In addition the technology of ...
IC Technology and Device Models
... a function of an external control voltage. A voltage to frequency converter is also known as a voltage controlled oscillator (VCO). The Signetics NE/SE556 VCO is a circuit that provides simultaneous square wave and triangle wave outputs as a function of input voltage. The frequency of oscillation of ...
... a function of an external control voltage. A voltage to frequency converter is also known as a voltage controlled oscillator (VCO). The Signetics NE/SE556 VCO is a circuit that provides simultaneous square wave and triangle wave outputs as a function of input voltage. The frequency of oscillation of ...
11-03-14 Top Draw Plus Prospekt - Reinzeichnung
... of the main bus bars. These are situated on the ‚back‘ of the switch system. In this context, the neutral conductor is guided together with the external conductors. This results in optimum electromagnetic behaviour. Through the arrangement of the main bus bars, it is possible for the distribution ba ...
... of the main bus bars. These are situated on the ‚back‘ of the switch system. In this context, the neutral conductor is guided together with the external conductors. This results in optimum electromagnetic behaviour. Through the arrangement of the main bus bars, it is possible for the distribution ba ...
M8100 Synchroscope User Manual
... generator to a dead busbar (dead busbar closure function). When enabled, the M8100 Synchroscope will give a close command to the generator breaker in case it detects that the busbar voltage is below dead busbar voltage offset limit and the generator has reached at least 80% of its nominal voltage. T ...
... generator to a dead busbar (dead busbar closure function). When enabled, the M8100 Synchroscope will give a close command to the generator breaker in case it detects that the busbar voltage is below dead busbar voltage offset limit and the generator has reached at least 80% of its nominal voltage. T ...
A 0.18V Charge-Pumped DFF with 50.8% Energy
... Measured results of the 2 DFFs targeting at near-/subthreshold region are shown in Fig. 7. CPDFF is fully functional down to 0.18V with a maximum frequency of 1 KHz. The measured C-Q delay is plotted in Fig. 7 (a). From 0.3V to 0.18V, CPDFF provides 23% faster C-Q delays than TGFF on average. At the ...
... Measured results of the 2 DFFs targeting at near-/subthreshold region are shown in Fig. 7. CPDFF is fully functional down to 0.18V with a maximum frequency of 1 KHz. The measured C-Q delay is plotted in Fig. 7 (a). From 0.3V to 0.18V, CPDFF provides 23% faster C-Q delays than TGFF on average. At the ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.