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ee2353 high voltage engineering
ee2353 high voltage engineering

Introduction to Multisim – Part 1 Prepared by: Mohamad Eid
Introduction to Multisim – Part 1 Prepared by: Mohamad Eid

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... 1. “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation. 2. Current into device pins ...
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... Table 2 shows the effect of further increasing R1 to reach the minimal power consumption achievable with the design approach in Fig. 4. Using R1 = 1 M reduces the total current consumption to 6.6 A at the cost of amplifying the noise in the circuit (due to the resistors and the op amp) by a higher ...
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... CT), have time intervals that are set by external resistors at ION and IOFF. The operating frequency is inversely proportional to the timing capacitor. The negative sloped portion of the oscillator waveform is extended in time as the measured output voltage decreases providing protection during outp ...
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Aalborg Universitet PowerFactory Software

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... Most power systems find that #2 is the most common, comprising about 70% of all faults. Type 4 is next, at about 15%. Type 3 is next, at about 10%. Type #1 is least common, usually only about 5 % are 3 phase faults. However, type #1 is a special kind of fault in that it is symmetric, i.e., all 3 pha ...
Three-Level Series Active Power Filter
Three-Level Series Active Power Filter

... communications and in process control system have made the loads very sensitive, requiring ideal sinusoidal supply voltage for their operation. The APF, which is supplied by a low power PWM inverter, is connected in series with the main supply and the non-linear load through the current transformer. ...
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... • Flowing electrons collide with the vibrating atoms in the wire. • In each collision, part of electron’s kinetic energy is transferred to the atom it collides with. • The kinetic energy of wire’s atoms increases, and thus the temperature of the wire increases. • The increased thermal energy can be ...
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... HO outputs “L” level as long as UV error for VCC is detected. LO is locked at “L” as long as UV error for VCC is detected. (VCC)* HO responds to IN if VCC exceeds VCC UV reset level. After VCC exceeds VCC UV reset level, the lock for LO is removed and responds to IN signal. ...
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... and Q13 raise the output impedance of the mirror, improving the open loop gain. Resistor R1, the transconductances of Q5–Q8, and the compensation capacitor C1 set the 400MHz gain bandwidth product of the amplifier. The RC, CC network between the high impedance node and the output provides extra comp ...
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TPS2376-H 数据资料 dataSheet 下载

... RTN: This pin provides the switched negative power rail used by the downstream circuits. The operational and inrush current limit control current into the pin. The PG circuit monitors the RTN voltage and also uses it as the return for the PG pin pulldown transistor. The internal MOSFET body diode cl ...
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... The Open-Collector Output is a transistor circuit configuration used in a wide variety of electronic designs including many integrated circuits (ICs). Three parts make up a transistor: the emitter, the base and the collector. These three parts form two distinct junctions, the emitter-base junction a ...
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(MR15 Regulations)II Mid Examination

< 1 ... 730 731 732 733 734 735 736 737 738 ... 1285 >

Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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