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GENERATOR DC / AC 60 HZ, SPEED = …3600 RPM
GENERATOR DC / AC 60 HZ, SPEED = …3600 RPM

... ** External case drain line may be required on some units refer to specific model number. When external case drain is required it should be unobstructed direct return to reservoir with a minimum I.D. no less than that of case drain port on generator motor. FOR SPECIFIC INSTALLATION RECOMMENDATIONS C ...
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SN65LVDS048A 数据资料 dataSheet 下载

... http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requ ...
AC Theory introduction - Legh Richardson Electrical Services
AC Theory introduction - Legh Richardson Electrical Services

University of North Carolina-Charlotte Department of Electrical and Computer Engineering
University of North Carolina-Charlotte Department of Electrical and Computer Engineering

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Circuits II - Uplift North Hills Prep

D1G - D7G  Features and Benefits Mechanical Data
D1G - D7G Features and Benefits Mechanical Data

... written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruct ...
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DOC

... Figure 1. Power Supply Configuration Your H-P power supply has two variable outputs, a single output supply on the left (which you used for your last lab), and a dual output (which you will use for this lab) on the right. Note that the outputs of these power supplies are not necessarily connected to ...
TIP145 / TIP146 / TIP147 PNP Epitaxial Silicon Darlington Transistor Features
TIP145 / TIP146 / TIP147 PNP Epitaxial Silicon Darlington Transistor Features

... Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor ...
Application Notes - NXP Semiconductors
Application Notes - NXP Semiconductors

... voltage systems to interface to each other. There are a number of low voltage families that have capability to interface with 5 V devices on the inputs, outputs, or both. Also, 3.3-volt devices need the capability to interface to either 2.5-volt or 1.8-volt devices. When mixing logic devices from di ...
As we discussed earlier capacitors and coils resist the flow
As we discussed earlier capacitors and coils resist the flow

... There is a formula we must use to combine them. The formula is: Z= ...
v I
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Measurement of standby power and energy efficiency
Measurement of standby power and energy efficiency

technical manual (PDF 59k)
technical manual (PDF 59k)

... carried out before any attempt to restart is made. If the cause of the failure has not been determined and rectified, the set will again lose output voltage approximately 30 seconds after restart. The operation of SCOOP and/or certain short circuit conditions may result in the loss of residual magne ...
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DG308A/DG309 Quad, SPST Analog Switches _______________General Description ____________________________Features
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... The DG308A/DG309 are quad, single-pole-single-throw (SPST) analog switches. The DG308A is normally open (SPST, NO), while the DG309 is normally closed (SPST, NC). Both parts feature fast switching speeds and low onresistance over the analog range. Other features include a turn-on time under 120ns, a ...
Current and Voltage in Series and Parallel Circuits
Current and Voltage in Series and Parallel Circuits

UNIT-V-LIC
UNIT-V-LIC

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... • If the MOSFET gate driver sticks in the “on” position, then there is a short circuit through the MOSFET – blow MOSFET! • If the load is disconnected during operation, so that Iout = 0, then L continues to push power to the right and very quickly charges C up to a high value (250V) – blow diode an ...
Physical Properties of Logic Devices
Physical Properties of Logic Devices

ELECTROMAGNETIC TOPOLOGY
ELECTROMAGNETIC TOPOLOGY

fuzzy control of shoot through time of single stage
fuzzy control of shoot through time of single stage

... systems[1]. One of the major problems associated with this is wide range of voltage variation due to the fluctuation in energy source impose stringent requirements for the inverter topologies and controls [2]. Normally, a boost type dc to dc converter can be added to step up the voltage. Although it ...
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VOS618A Optocoupler, Phototransistor Output, Low Input Current

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MC3479 Stepper Motor Driver

... #6012 could be used to reduce RqJA. In extreme cases, forced air cooling should be considered. The above calculation, and RqJA, assumes that a ground plane is provided under the MC3479 (either or both sides of the PC board) to aid in the heat dissipation. Single nominal width traces leading from the ...
UC3843 – Current Mode PWM Controller
UC3843 – Current Mode PWM Controller

... The UC1842/3/4/5 family of control ICs provides the necessary features to implement off-line or DC to DC fixed frequency current mode control schemes with a minimal external parts count. Internally implemented circuits include under-voltage lockout featuring start up current less than 1mA, a precisi ...
CHAPTER 13 OUTPUT STAGES AND POWER AMPLIFIERS
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...  The load current is supplied by QN which acts as the output emitter follower  QP will be conducting a current that decreases as vO increases (negligible for large vO)  QP acts as the output emitter follower when vI goes negative  The power properties are almost identical to those derived for th ...
< 1 ... 639 640 641 642 643 644 645 646 647 ... 1285 >

Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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