Circuit Note CN-0065
... The AD5422 has an on-board 10 ppm/°C reference. For high performance over temperature, this design uses an external ADR445 5 V reference. This device has 0.04% maximum accuracy error and a 3 ppm/°C maximum temperature drift. This drift contributes approximately 0.02% error across the industrial temp ...
... The AD5422 has an on-board 10 ppm/°C reference. For high performance over temperature, this design uses an external ADR445 5 V reference. This device has 0.04% maximum accuracy error and a 3 ppm/°C maximum temperature drift. This drift contributes approximately 0.02% error across the industrial temp ...
International Electrical Engineering Journal (IEEJ) Vol. 5 (2014) No.9, pp. 1531-1538
... 2.2 Network performance constraints: These are the constraints on dependent variables i.e., the reactive power generations of generators and voltages of load buses. min ...
... 2.2 Network performance constraints: These are the constraints on dependent variables i.e., the reactive power generations of generators and voltages of load buses. min ...
AN2007-04
... From the results we can see that there is a significant increase of turn off delay time with decrease of the switched current Ic. So just simply calculate dead time according to a chosen gate resistor is obviously not precise enough. Measuring the delay time under the dedicated driving condition the ...
... From the results we can see that there is a significant increase of turn off delay time with decrease of the switched current Ic. So just simply calculate dead time according to a chosen gate resistor is obviously not precise enough. Measuring the delay time under the dedicated driving condition the ...
HMC726LC3C
... as 13 GHz. The HMC726LC3C may be easily configured to provide any of the following logic functions: AND, NAND, OR and NOR. All input signals to the HMC726LC3C are terminated with 50 Ohms to ground on-chip, and maybe either AC or DC coupled. The differential outputs of the HMC726LC3C may be either AC ...
... as 13 GHz. The HMC726LC3C may be easily configured to provide any of the following logic functions: AND, NAND, OR and NOR. All input signals to the HMC726LC3C are terminated with 50 Ohms to ground on-chip, and maybe either AC or DC coupled. The differential outputs of the HMC726LC3C may be either AC ...
Fault Site Localization Technique by Imaging with
... image of this region is shown in Fig. 10. EBIC contrast around the target drain area was smaller and weaker, similar to the planar observation. EBIC contrast is associated with a difference in carrier pair generation rate or in concentration of ionized dopants, so an error in the ion Fig. 10 Cross-s ...
... image of this region is shown in Fig. 10. EBIC contrast around the target drain area was smaller and weaker, similar to the planar observation. EBIC contrast is associated with a difference in carrier pair generation rate or in concentration of ionized dopants, so an error in the ion Fig. 10 Cross-s ...
High-/Mixed-Voltage RF and Analog CMOS Circuits Come of Age
... Self‐based inverter‐based circuits are sensitive to process, voltage and temperature (PVT) variation. The back‐gate control scheme highlighted in [10] is an effective solution for this problem. It keeps the supply current constant and reduces the sensitivity to supply r ...
... Self‐based inverter‐based circuits are sensitive to process, voltage and temperature (PVT) variation. The back‐gate control scheme highlighted in [10] is an effective solution for this problem. It keeps the supply current constant and reduces the sensitivity to supply r ...
LP2951JAN Series of Adjustable Micropower
... which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the Electrical Characteristics. The specified specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is n ...
... which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the Electrical Characteristics. The specified specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is n ...
Two-Way Current-Combining w-Band Power Amplifier in 65
... CMOS technologies constrain high power delivery. Reducing output impedance can increase output power, but at the cost of low efficiency due to higher losses from the impedance matching network with a higher impedance transformation ratio. Consequently, such optimization leads to tradeoffs between ou ...
... CMOS technologies constrain high power delivery. Reducing output impedance can increase output power, but at the cost of low efficiency due to higher losses from the impedance matching network with a higher impedance transformation ratio. Consequently, such optimization leads to tradeoffs between ou ...
Choosing an Appropriate Pull-up/Pull-down
... The first thing to recognize when dealing with an open drain output is whether a pull-up or a pull-down resistor is needed. This depends on whether the IC drives the output high or low when it wants to assert it. For example, the TPS62067 step-down converter has a PG output that it drives low if the ...
... The first thing to recognize when dealing with an open drain output is whether a pull-up or a pull-down resistor is needed. This depends on whether the IC drives the output high or low when it wants to assert it. For example, the TPS62067 step-down converter has a PG output that it drives low if the ...
top plate. It is not - SMDP-VLSI
... appropriate choice of plates and connection between various metal and Poly Si layers available. It should be mentioned that each interconnect layer is insulated from the others by a SiO2 layer. Of the various structure shown, the four layer structure has the least parasitic capacitance. ...
... appropriate choice of plates and connection between various metal and Poly Si layers available. It should be mentioned that each interconnect layer is insulated from the others by a SiO2 layer. Of the various structure shown, the four layer structure has the least parasitic capacitance. ...
Experiments for First Year Electrical Engg Lab
... The magnetizing force H can be produced by passing current through the coil wound on iron core. It can be increased or decreased by increasing or decreasing the current through the coil. Consider a circuit consisting of a battery “E” an ammeter, variable resistance R and reversible switch shown in t ...
... The magnetizing force H can be produced by passing current through the coil wound on iron core. It can be increased or decreased by increasing or decreasing the current through the coil. Consider a circuit consisting of a battery “E” an ammeter, variable resistance R and reversible switch shown in t ...
D306A Electroluminescent Lamp Driver with Microcontroller
... does not exceed the maximum rated value of 400Vpp. Operating the D306A IC driver above this rating can cause irreversible damage to the device. This condition is most likely in applications, such as in automotive instrument clusters, where the supply voltage (Vbat) is higher than 6.0V and can genera ...
... does not exceed the maximum rated value of 400Vpp. Operating the D306A IC driver above this rating can cause irreversible damage to the device. This condition is most likely in applications, such as in automotive instrument clusters, where the supply voltage (Vbat) is higher than 6.0V and can genera ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.