Interface Circuits Word Document
... Transistors can operate either as switches or as amplifiers. When we use the transistor as an amplifier we need to use the linear region and avoid the cutoff and saturation regions When the transistor is being used as a switch, we operate in the cut-off and saturation regions of the characteristic, ...
... Transistors can operate either as switches or as amplifiers. When we use the transistor as an amplifier we need to use the linear region and avoid the cutoff and saturation regions When the transistor is being used as a switch, we operate in the cut-off and saturation regions of the characteristic, ...
Episode 123 - Teaching Advanced Physics
... supply using an oscilloscope BEWARE: a lot of oscilloscopes have ‘calibration positions’ on their variable y-gain and time base settings. Students will need to be reminded to set these prior to making measurements otherwise they will get systematic errors throughout. ...
... supply using an oscilloscope BEWARE: a lot of oscilloscopes have ‘calibration positions’ on their variable y-gain and time base settings. Students will need to be reminded to set these prior to making measurements otherwise they will get systematic errors throughout. ...
BU7421G
... Indicates the maximum voltage that can be applied between the VDD terminal and VSS terminal without deterioration or destruction of characteristics of internal circuit. (2) Differential Input Voltage (VID) Indicates the maximum voltage that can be applied between non-inverting and inverting terminal ...
... Indicates the maximum voltage that can be applied between the VDD terminal and VSS terminal without deterioration or destruction of characteristics of internal circuit. (2) Differential Input Voltage (VID) Indicates the maximum voltage that can be applied between non-inverting and inverting terminal ...
RE: The fastest and the most accurate electronic regulation system
... In today’s electronic environment, saturated and highly unstable, where fluctuations in the power supply voltage are more than frequent, voltage stabilisers play a very important role in guaranteeing stable voltage to loads more sensitive to such variations. The Salicru RE series of electronic stabi ...
... In today’s electronic environment, saturated and highly unstable, where fluctuations in the power supply voltage are more than frequent, voltage stabilisers play a very important role in guaranteeing stable voltage to loads more sensitive to such variations. The Salicru RE series of electronic stabi ...
UCC2897A 数据资料 dataSheet 下载
... The controller’s internal, 5-V bias rail is connected to this pin. The internal bias regulator requires a high quality ceramic bypass capacitor (CVREF) to GND for noise filtering and to provide compensation to the regulator circuitry. The recommended CVREF value is 0.22-µF and X7R capacitors are rec ...
... The controller’s internal, 5-V bias rail is connected to this pin. The internal bias regulator requires a high quality ceramic bypass capacitor (CVREF) to GND for noise filtering and to provide compensation to the regulator circuitry. The recommended CVREF value is 0.22-µF and X7R capacitors are rec ...
AAT4900 数据资料DataSheet下载
... Copyright © 2012 Skyworks Solutions, Inc. All Rights Reserved. Information in this document is provided in connection with Skyworks Solutions, Inc. (“Skyworks”) products or services. These materials, including the information contained herein, are provided by Skyworks as a service to its customers a ...
... Copyright © 2012 Skyworks Solutions, Inc. All Rights Reserved. Information in this document is provided in connection with Skyworks Solutions, Inc. (“Skyworks”) products or services. These materials, including the information contained herein, are provided by Skyworks as a service to its customers a ...
ECE1250U14_Lab8_Capacitors
... 0+ and 0- (for channel 1) and 1+ and 1- (for channel 2). The + side is like the ‘red’ lead on the DMM and represents the higher voltage measurement point. The – side is like the ‘black’ lead on the DMM and represents the lower voltage point. B. Generate a 1kHz sine wave. You choose the amplitude. Ad ...
... 0+ and 0- (for channel 1) and 1+ and 1- (for channel 2). The + side is like the ‘red’ lead on the DMM and represents the higher voltage measurement point. The – side is like the ‘black’ lead on the DMM and represents the lower voltage point. B. Generate a 1kHz sine wave. You choose the amplitude. Ad ...
MAX16963 Dual 2.2MHz, Low-Voltage Step-Down DC-DC Converter General Description
... input voltage range and provides a 0.8V to 3.6V output voltage range. The device delivers up to 1.5A of load current per output. The low input/output voltage range and the ability to provide high output currents make this device ideal for on-board point-of-load and postregulation applications. The d ...
... input voltage range and provides a 0.8V to 3.6V output voltage range. The device delivers up to 1.5A of load current per output. The low input/output voltage range and the ability to provide high output currents make this device ideal for on-board point-of-load and postregulation applications. The d ...
Document
... In this laboratory exercise, we learned to determine the Nominal value of provided resistors by using the Color Code System. In addition, we compared the marked values to the measured values using a multi-meter to obtain said data. Resistors can be categorized in two groups, fixed or variable. A fix ...
... In this laboratory exercise, we learned to determine the Nominal value of provided resistors by using the Color Code System. In addition, we compared the marked values to the measured values using a multi-meter to obtain said data. Resistors can be categorized in two groups, fixed or variable. A fix ...
eupec E i
... While considering technical high-quality IGBT drive circuits, a team worked out the basic features of driver core 2ED30C17. This driver core is suitable for voltages up to 1700V at an extremely high isolation stability and peak currents of 30A. By applying various features (e.g. DVRC Dynamic Voltage ...
... While considering technical high-quality IGBT drive circuits, a team worked out the basic features of driver core 2ED30C17. This driver core is suitable for voltages up to 1700V at an extremely high isolation stability and peak currents of 30A. By applying various features (e.g. DVRC Dynamic Voltage ...
three phase scr control and regulation board
... frequency changes too fast for the circuit to remain locked, an out of lock condition is detected. In such a case, the PHASE LOSS LED is illuminated and a fast turn off is initiated which inhibits all gate signals within 20µS. When lock is restored, the unit will ramp up to the programmed delay angl ...
... frequency changes too fast for the circuit to remain locked, an out of lock condition is detected. In such a case, the PHASE LOSS LED is illuminated and a fast turn off is initiated which inhibits all gate signals within 20µS. When lock is restored, the unit will ramp up to the programmed delay angl ...
resisTors 101
... • TCR is expressed as the change in resistance in ppm (0.0001 %) with each degree Celsius of change in temperature. TCR is typically referenced at + 25 ˚C and changes as the temperature increases (or decreases). A resistor with a TCR of 100 ppm/°C will change 0.1 % over a 10 °C change and 1 % over a ...
... • TCR is expressed as the change in resistance in ppm (0.0001 %) with each degree Celsius of change in temperature. TCR is typically referenced at + 25 ˚C and changes as the temperature increases (or decreases). A resistor with a TCR of 100 ppm/°C will change 0.1 % over a 10 °C change and 1 % over a ...
TLC1550 数据资料 dataSheet 下载
... This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is ad ...
... This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is ad ...
PDF
... Simulations are performed on tanner tool at 65nm technology for 16 input OR gate. Keywords – contention, domino logic, leakage, power consumption, reliability. ...
... Simulations are performed on tanner tool at 65nm technology for 16 input OR gate. Keywords – contention, domino logic, leakage, power consumption, reliability. ...
UCC3888 数据资料 dataSheet 下载
... obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its hardware products to the speci ...
... obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its hardware products to the speci ...
ST3243EB
... and supply current is reduced to 1 µA. Disconnecting the serial port or turning off the peripheral drives causes the auto power-down condition to occur. Auto power-down can be disabled when FORCEON and FORCEOFF are high, and should be done when driving a serial mouse. With auto power-down enabled, t ...
... and supply current is reduced to 1 µA. Disconnecting the serial port or turning off the peripheral drives causes the auto power-down condition to occur. Auto power-down can be disabled when FORCEON and FORCEOFF are high, and should be done when driving a serial mouse. With auto power-down enabled, t ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.