TPS75901 数据资料 dataSheet 下载
... Because the PMOS device behaves as a low-value resistor, the dropout voltage is very low (typically 400 mV at an output current of 7.5 A for the TPS75933) and is directly proportional to the output current. Additionally, since the PMOS pass element is a voltage-driven device, the quiescent current i ...
... Because the PMOS device behaves as a low-value resistor, the dropout voltage is very low (typically 400 mV at an output current of 7.5 A for the TPS75933) and is directly proportional to the output current. Additionally, since the PMOS pass element is a voltage-driven device, the quiescent current i ...
PHYS 1112 In-Class Exam #3B Thu. April 9, 2009, 2:00pm-3:15pm
... point. There will be no penalty for wrong answers. No partial credit will be given. I recommend that you read all the questions at the start so that you can allocate your time wisely. (Answer the easy questions first!) You may use a scientific calculator for arithmetic only; your calculator must be ...
... point. There will be no penalty for wrong answers. No partial credit will be given. I recommend that you read all the questions at the start so that you can allocate your time wisely. (Answer the easy questions first!) You may use a scientific calculator for arithmetic only; your calculator must be ...
Multiphase DC–DC Converters Using a Boost-Half
... only suppresses the surge voltage, but helps to reduce the circulating current and compensate the duty cycle loss [4]. At the expense of increased number of switches, the V6 converter [5] becomes beneficial in higher power application. The currentfed converter, compared to its voltage-fed counterpar ...
... only suppresses the surge voltage, but helps to reduce the circulating current and compensate the duty cycle loss [4]. At the expense of increased number of switches, the V6 converter [5] becomes beneficial in higher power application. The currentfed converter, compared to its voltage-fed counterpar ...
Chapter 18
... Resistors in Series • When two or more resistors are connected end-to-end, they are said to be in series • The current is the same in all resistors because any charge that flows through one resistor flows through the other • The sum of the potential differences across the resistors is equal to the ...
... Resistors in Series • When two or more resistors are connected end-to-end, they are said to be in series • The current is the same in all resistors because any charge that flows through one resistor flows through the other • The sum of the potential differences across the resistors is equal to the ...
Levels of Difficulty - IFSC-USP
... “The Inverse Photoelectric Effect,” by S. D. Kropinak, (Canon-McMillian Senior High School, Canonsburg, PA), on the Physics Infomall CD ROM. Most physics textbooks have a section on Planck’s constant–just look in the index. Visualizing Quantum Mechanics: Solids and Light, a project of the Kansas Sta ...
... “The Inverse Photoelectric Effect,” by S. D. Kropinak, (Canon-McMillian Senior High School, Canonsburg, PA), on the Physics Infomall CD ROM. Most physics textbooks have a section on Planck’s constant–just look in the index. Visualizing Quantum Mechanics: Solids and Light, a project of the Kansas Sta ...
AP7335A-50 N E W P R O D U C T 300mA, LOW QUIESCENT
... ON/OFF Input Operation The AP7335A-50 is turned on by setting the EN pin high, and is turned off by pulling it low. If this feature is not used, the EN pin should be tied to IN pin to keep the regulator output on at all time. To ensure proper operation, the signal source used to drive the EN pin mus ...
... ON/OFF Input Operation The AP7335A-50 is turned on by setting the EN pin high, and is turned off by pulling it low. If this feature is not used, the EN pin should be tied to IN pin to keep the regulator output on at all time. To ensure proper operation, the signal source used to drive the EN pin mus ...
OVER-VOLTAGE AND OVER-CURRENT PROTECTION IC (Rev. B)
... The bq24308 device integrates an input overvoltage protection feature to protect downstream devices from faulty input sources. If the input voltage rises above VOVP, the internal FET Q1 is turned off, removing power from the circuit. As shown in Figure 16 to Figure 17, the response is very rapid, wi ...
... The bq24308 device integrates an input overvoltage protection feature to protect downstream devices from faulty input sources. If the input voltage rises above VOVP, the internal FET Q1 is turned off, removing power from the circuit. As shown in Figure 16 to Figure 17, the response is very rapid, wi ...
ACS715 - Pololu
... 1 A change through the primary conductor. The sensitivity is the product of the magnetic circuit sensitivity (G / A) and the linear IC amplifier gain (mV/G). The linear IC amplifier gain is programmed at the factory to optimize the sensitivity (mV/A) for the full-scale current of the device. Noise ( ...
... 1 A change through the primary conductor. The sensitivity is the product of the magnetic circuit sensitivity (G / A) and the linear IC amplifier gain (mV/G). The linear IC amplifier gain is programmed at the factory to optimize the sensitivity (mV/A) for the full-scale current of the device. Noise ( ...
DRV8801-Q1 DMOS Full-Bridge Motor Drivers
... The DRV8801-Q1 is an integrated motor driver solution for brushed-DC motors. The device integrates a DMOS H-bridge and current sense and protection circuitry. The device can be powered with a supply voltage between 8 and 38 V, and is capable of providing an output current up to 2.8 A peak. A simple ...
... The DRV8801-Q1 is an integrated motor driver solution for brushed-DC motors. The device integrates a DMOS H-bridge and current sense and protection circuitry. The device can be powered with a supply voltage between 8 and 38 V, and is capable of providing an output current up to 2.8 A peak. A simple ...
Inductance
... Point E with zero current, there is no magnetic flux. The field can be considered collapsed into the wire. The next half-cycle of current allows the field to expand and collapse again, but the directions are reversed. When the flux expands at points F and G, the field lines are clockwise. From G ...
... Point E with zero current, there is no magnetic flux. The field can be considered collapsed into the wire. The next half-cycle of current allows the field to expand and collapse again, but the directions are reversed. When the flux expands at points F and G, the field lines are clockwise. From G ...
BDTIC
... While the input supply voltage is lesser or close to the LEDs load forward voltage’s requirement, the output current is not reaching the target setting value. Under this condition, the ILD6070 is working in the DC mode, meaning that the DMOS is fully turned on and no switching activities. One of the ...
... While the input supply voltage is lesser or close to the LEDs load forward voltage’s requirement, the output current is not reaching the target setting value. Under this condition, the ILD6070 is working in the DC mode, meaning that the DMOS is fully turned on and no switching activities. One of the ...
16.3 Reverse Leakage Current and Breakdown Voltage
... Technology Solutions, were analyzed. As was seen on similar studies on GaN-on-SiC and GaN-on-sapphire structures, the analysis quickly focused on two underlying leakage mechanisms in the Ni/Au Schottky diode gate electrode of the HEMT device. The first leakage process is ...
... Technology Solutions, were analyzed. As was seen on similar studies on GaN-on-SiC and GaN-on-sapphire structures, the analysis quickly focused on two underlying leakage mechanisms in the Ni/Au Schottky diode gate electrode of the HEMT device. The first leakage process is ...
Commande Vectorielle Non Linéaire de L`onduleur MLI à
... problem formulation adopts three performances indexes, the maximum overshoot, the rise time and the integral absolute error of step response as the objective function to determine the PI control parameters for getting a well performance under a given system, the primary design goal is to obtain good ...
... problem formulation adopts three performances indexes, the maximum overshoot, the rise time and the integral absolute error of step response as the objective function to determine the PI control parameters for getting a well performance under a given system, the primary design goal is to obtain good ...
Chapter 4 - High Voltage Transient Analysis
... The value of the function f(x-at) at position x1 and time t1 would be e1 = f(x1 - a t1) At any time t afterwards (i.e. at time t+t1), the value of this same function at the position x would be given by e2 = f[x - a (t+t1)] = f(x-at + a t1) This latter voltage e2 would be equal to e1 at the position ...
... The value of the function f(x-at) at position x1 and time t1 would be e1 = f(x1 - a t1) At any time t afterwards (i.e. at time t+t1), the value of this same function at the position x would be given by e2 = f[x - a (t+t1)] = f(x-at + a t1) This latter voltage e2 would be equal to e1 at the position ...
LT1886 - Dual 700MHz, 200mA Operational Amplifier
... onboard which would degrade the input voltage noise. If the inputs can have a voltage difference of more than 0.7V, the input current should be limited to less than 10mA with external resistance (usually the feedback resistor or source resistor). Each input also has two ESD clamp diodes—one to each ...
... onboard which would degrade the input voltage noise. If the inputs can have a voltage difference of more than 0.7V, the input current should be limited to less than 10mA with external resistance (usually the feedback resistor or source resistor). Each input also has two ESD clamp diodes—one to each ...
UK1122 - L298 H-Bridge Dual Bidirectional Motor Driver
... Motor Driver (2 x 2A) This dual bidirectional motor driver is based on the very popular L298 Dual H-Bridge Motor Driver Integrated Circuit. The circuit will allow you to easily and independently control two motors of up to 2A each in both directions. It is ideal for robotic applications and well sui ...
... Motor Driver (2 x 2A) This dual bidirectional motor driver is based on the very popular L298 Dual H-Bridge Motor Driver Integrated Circuit. The circuit will allow you to easily and independently control two motors of up to 2A each in both directions. It is ideal for robotic applications and well sui ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.