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AD8270 数据手册DataSheet 下载
AD8270 数据手册DataSheet 下载

... Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to ab ...
TPS7A84A 3-A High-Accuracy (0.75%), Low
TPS7A84A 3-A High-Accuracy (0.75%), Low

... SNS, or leave floating. Connecting these pins to ground increases the output voltage, whereas connecting these pins to SNS increases the resolution of the ANY-OUT network but decreases the range of the network; multiple pins may be simultaneously connected to GND or SNS to select the desired output ...
A PIC SWR Meter
A PIC SWR Meter

... mounted behind the enclosure’s front panel, with the sampling circuit secured to the rear panel. C1 and C2 of Figure 2 provide a time constant appropriate for SSB. These capacitors should be tantalum units because they also serve to remove stray RF. ...
0.35µm ULC Series
0.35µm ULC Series

... 3.3V. The performance specifications of any given ULC design however, must be explicitly specified as 2.5V, 3.3V or both. ...
BJT Biasing Tutorial 2 -page 1-9
BJT Biasing Tutorial 2 -page 1-9

Design of a New External Signal Controlled Polymorphic
Design of a New External Signal Controlled Polymorphic

... polytronics or polymorphic electronics. Polytronics refers to electronics with superimposed built-in functionality. Polytronic circuits have several intrinsically built-in functions, and can have the same output provide different functional responses under the control of specified parameters such, v ...
NVT2001, NVT2002 - NXP Semiconductors
NVT2001, NVT2002 - NXP Semiconductors

Update on 2008 Code Changes
Update on 2008 Code Changes

... they wanted to assure that these vital loads are not disrupted, whether fed from the normal source or the alternate source. There are several reasons for this. If the overcurrent protective devices are not selectively coordinated in the normal path to the vital loads, a fault can cause the OCPDs to ...
AN105 - Current Sense Circuit Collection
AN105 - Current Sense Circuit Collection

... This is the same sampling architecture as used in the front-end of the LTC2053 and LTC6800, but sans op amp gain stage. This particular switch can handle up to 18V, so the ultra-high precision concept can be utilized at higher voltages than the fully integrated ICs mentioned. This circuit simply com ...
ERG(X)
ERG(X)

DATA  SHEET For a complete data sheet, please also download:
DATA SHEET For a complete data sheet, please also download:

... plastic mini-pack (SO) ...
NX3DV642 1. General description 3-lane high-speed MIPI compatible switch
NX3DV642 1. General description 3-lane high-speed MIPI compatible switch

... Rev. 1 — 20 August 2012 ...
microK Manual
microK Manual

Atlas ESR
Atlas ESR

... as it’s acronym implies, is the value of resistance that is effectively in series with an ideal capacitor. No capacitor is ideal of course, the detailed equivalent circuit of a typical capacitor is very complex. For many electrolytic capacitors however, the most important parameters regarding the ca ...
CMOS Digital Isolators Supersede Optocouplers in
CMOS Digital Isolators Supersede Optocouplers in

... total input plus output current varies widely, depending on the type of optocoupler. When forward biased, the optocoupler LED is low-impedance, and device power consumption increases with LED forward current, which can range from 1 mA to over 15 mA. In some cases, the LED may require an external dri ...
lecture1423723756
lecture1423723756

... Ionization due to Electron Collision As we discussed that there are always some free electrons and ions presents in the air or gas but they are insufficient to conduct electricity. Whenever these free electrons come across a strong electric field, these are directed towards higher potential points ...
Emon Meter Installation
Emon Meter Installation

... IDRs with modular jacks can be powered from either the first E-Mon D-Mon meter or by an external power supply (requires 120VAC). IDRs with removable screw-type connectors require an external power supply (provided). IDRs are supplied with an ID letter for each group of 8 inputs to make them compatib ...
IOSR Journal of Computer Engineering (IOSR-JCE)
IOSR Journal of Computer Engineering (IOSR-JCE)

Copy of the full paper
Copy of the full paper

... noise) at sampling resolution (0.1 ms), with amplitude uniformly distributed between -0.5 nA and 0.5 nA in most cases. In principle any current could be used, provided it is small enough to prevent ...
LTC4000 - Linear Technology
LTC4000 - Linear Technology

How to Select Little Logic (Rev. A)
How to Select Little Logic (Rev. A)

... SN74LVCxG Little Logic Devices SN74LVC1G/2G/3G Little Logic components are designed with no clamp diodes to VCC on either inputs or outputs, making the interface voltage higher than applied VCC. This design allows the down translation from 5 V to a desired lower switch level, which refers to supply ...
Temperature Amplifier Manual
Temperature Amplifier Manual

... different values of RTD’s and Thermistor Probes. This versatile amplifier is capable of handling four different basic RTD values of 100, 200, 500 and 1000Ω, by simply installing a jumper in the appropriate position. Contacts E-25 and E-26 are provided to extend the rang of RTD resistance values An i ...
Bulletin WT3000E-01EN WT3000E Series Precision Power Analyzers
Bulletin WT3000E-01EN WT3000E Series Precision Power Analyzers

DATASHEET SEARCH SITE == WWW.ICPDF.COM
DATASHEET SEARCH SITE == WWW.ICPDF.COM

... undesired transients such as code to code glitch and channel to channel crosstalk. The low-power DAC7558 operates from a single 2.7-V to 5.5-V supply. The DAC7558 output amplifiers can drive a 2-kΩ, 200-pF load rail-to-rail with 5-µs settling time; the output range is set using an external voltage r ...
book here
book here

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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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